SI2329DS-T1-GE3

Mfr. #:: SI2329DS-T1-GE3
Produttore:: Vishay / Siliconix
Descrizione:: MOSFET -8V Vds 5V Vgs SOT-23
Ciclo vitale:: Nuovo da questo produttore.
Scheda dati:: SI2329DS-T1-GE3 Scheda dati
Consegna:: DHL FedEx Ups TNT EMS
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HTML Datasheet:: SI2329DS-T1-GE3 Datasheet SI2329DS-T1-GE3 Datasheet (P4-P6)SI2329DS-T1-GE3 Datasheet (P7-P9)SI2329DS-T1-GE3 Datasheet (P10)
ECAD Model:
Maggiori informazioni:: SI2329DS-T1-GE3 maggiori informazioni

Attributo del prodotto
Valore attributo

Produttore:: Vishay

Categoria di prodotto:: MOSFET

RoHS:: Y

Tecnologia:: si

Stile di montaggio:: SMD/SMT

Pacchetto/custodia:: SOT-23-3

Numero di canali:: 1 Channel

Polarità del transistor:: Canale P

Vds - Tensione di rottura Drain-Source:: 8 V

Id - Corrente di scarico continua:: 6 A

Rds On - Resistenza Drain-Source:: 30 mOhms

Vgs th - Tensione di soglia gate-source:: 350 mV

Vgs - Tensione Gate-Source:: 4.5 V

Qg - Carica cancello:: 19.3 nC

Temperatura di esercizio minima:: - 55 C

Temperatura massima di esercizio:: + 150 C

Pd - Dissipazione di potenza:: 2.5 W

Configurazione:: Separare

Modalità canale:: Aumento

Nome depositato:: TrenchFET

Confezione:: Bobina

Serie:: SI2

Tipo di transistor:: 1 P-Channel

Marca:: Vishay / Siliconix

Transconduttanza diretta - Min:: 2 S

Tempo di caduta:: 20 ns

Tipologia di prodotto:: MOSFET

Ora di alzarsi:: 22 ns

Quantità confezione di fabbrica:: 3000

sottocategoria:: MOSFET

Tempo di ritardo allo spegnimento tipico:: 46 ns

Tempo di ritardo di accensione tipico:: 20 ns

Unità di peso:: 0.000282 oz

Tags: SI232, SI23, SI2

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI2329DS-T1-GE3 Descrizione

***ler Electronic: VISHAY SI2329DS-T1-GE3 MOSFET Transistor, P Channel, -6 A, -8 V, 0.025 ohm, -4.5 V, -350 mV

***ure Electronics: Si2329DS Series 8 V 5.3 A 0.03 Ohm SMT P-Channel MOSFET - SOT-23-3

***ied Electronics & Automation: SI2329DS-T1-GE3 P-channel MOSFET Transistor; 6 A; 8 V; 3-Pin TO-236

***enic: 8V 6A 2.5W 30m´Î@4.5V5.3A 800mV@250Ã×A P Channel SOT-23(SOT-23-3) MOSFETs ROHS

***nell: MOSFET, P-CH, 8V, 6A, SOT23; Transistor Polarity:P Channel; Continuous Drain Current Id:-6A; Drain Source Voltage Vds:-8V; On Resistance Rds(on):0.025ohm; Rds(on) Test Voltage Vgs:-4.5V; Power Dissipation Pd:2.5W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOT-23; No. of Pins:3; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C; Voltage Vgs Max:30V

SI2329DS-T1-GE3 Maggiori informazioni

SI2 Series TrenchFET® Power MOSFETs: Vishay SI2 Series TrenchFET® Power MOSFETs are N-channel MOSFETs designed with 30V V(ds) and are 100% tested gate resistance(Rg). These MOSFETs have gate resistance tested for 1MHz frequency with 0.2Ω to 1.4Ω. These SI2 series MOSFETs operate from -55ºC to 150ºC junction and storage temperature. The SI2 series are ideal for DC/DC converter, Load switch, and power management.

Market price

Parte #	Mfg.	Descrizione	Azione	Prezzo
SI2329DS-T1-GE3 DISTI # V72:2272_07433101	Vishay Intertechnologies	Trans MOSFET P-CH 8V 5.3A 3-Pin SOT-23 T/R RoHS: Compliant	111	100:$0.4330 25:$0.5115 10:$0.6251 1:$0.7690
SI2329DS-T1-GE3 DISTI # V36:1790_07433101	Vishay Intertechnologies	Trans MOSFET P-CH 8V 5.3A 3-Pin SOT-23 T/R RoHS: Compliant	0	3000000:$0.2454 1500000:$0.2456 300000:$0.2560 30000:$0.2716 3000:$0.2741
SI2329DS-T1-GE3 DISTI # SI2329DS-T1-GE3CT-ND	Vishay Siliconix	MOSFET P-CH 8V 6A SOT-23 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	9053In Stock	1000:$0.2596 500:$0.3245 100:$0.4104 10:$0.5350 1:$0.6100
SI2329DS-T1-GE3 DISTI # SI2329DS-T1-GE3DKR-ND	Vishay Siliconix	MOSFET P-CH 8V 6A SOT-23 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	9053In Stock	1000:$0.2596 500:$0.3245 100:$0.4104 10:$0.5350 1:$0.6100
SI2329DS-T1-GE3 DISTI # SI2329DS-T1-GE3TR-ND	Vishay Siliconix	MOSFET P-CH 8V 6A SOT-23 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	9000In Stock	30000:$0.1995 15000:$0.2047 6000:$0.2126 3000:$0.2284
SI2329DS-T1-GE3 DISTI # 32435712	Vishay Intertechnologies	Trans MOSFET P-CH 8V 5.3A 3-Pin SOT-23 T/R RoHS: Compliant	111	31:$0.7690
SI2329DS-T1-GE3 DISTI # SI2329DS-T1-GE3	Vishay Intertechnologies	Trans MOSFET P-CH 8V 5.3A 3-Pin SOT-23 T/R (Alt: SI2329DS-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Asia - 15000	150000:$0.2723 75000:$0.2769 30000:$0.2817 15000:$0.2918 9000:$0.3026 6000:$0.3142 3000:$0.3268
SI2329DS-T1-GE3 DISTI # SI2329DS-T1-GE3	Vishay Intertechnologies	Trans MOSFET P-CH 8V 5.3A 3-Pin SOT-23 T/R (Alt: SI2329DS-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 0	30000:€0.1899 18000:€0.2049 12000:€0.2219 6000:€0.2579 3000:€0.3779
SI2329DS-T1-GE3 DISTI # SI2329DS-T1-GE3	Vishay Intertechnologies	Trans MOSFET P-CH 8V 5.3A 3-Pin SOT-23 T/R - Tape and Reel (Alt: SI2329DS-T1-GE3) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0
SI2329DS-T1-GE3 DISTI # 63W4143	Vishay Intertechnologies	MOSFET Transistor, P Channel, -6 A, -8 V, 0.025 ohm, -4.5 V, -350 mV RoHS Compliant: Yes	32256	1000:$0.2850 500:$0.3350 100:$0.3960 50:$0.4320 25:$0.4690 10:$0.5050 1:$0.6210
SI2329DS-T1-GE3 DISTI # 70616155	Vishay Siliconix	SI2329DS-T1-GE3 P-channel MOSFET Transistor,6 A,8 V,3-Pin TO-236 RoHS: Compliant	0	300:$0.4900 600:$0.4800 1500:$0.4700 3000:$0.4500 7500:$0.4200
SI2329DS-T1-GE3 DISTI # 78-SI2329DS-T1-GE3	Vishay Intertechnologies	MOSFET -8V Vds 5V Vgs SOT-23 RoHS: Compliant	20267	1:$0.5900 10:$0.4780 100:$0.3630 500:$0.3000 1000:$0.2400 3000:$0.2170 6000:$0.2020 9000:$0.1950
SI2329DS-T1-GE3 DISTI # 8123114P	Vishay Intertechnologies	TRANS MOSFET P-CH 8V 5.3A 3-PIN, RL	7800	3000:£0.2160 1500:£0.2190 600:£0.2500 300:£0.3020
SI2329DS-T1-GE3	Vishay Intertechnologies		2934
SI2329DS-T1-GE3 DISTI # 2283643	Vishay Intertechnologies	MOSFET, P-CH, 8V, 6A, SOT23 RoHS: Compliant	31934	500:$0.4520 100:$0.5490 10:$0.7220 1:$0.9040
SI2329DS-T1-GE3 DISTI # 2283643	Vishay Intertechnologies	MOSFET, P-CH, 8V, 6A, SOT23	31531	500:£0.2340 250:£0.2590 100:£0.2840 10:£0.4150 1:£0.5340
SI2329DS-T1-GE3	Vishay Intertechnologies	MOSFET -8V Vds 5V Vgs SOT-23 RoHS: Compliant	Americas -

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Disponibilità

Azione:: 20
Su ordine:: 2003
Inserisci la quantità:

Il prezzo attuale di SI2329DS-T1-GE3 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]

Prezzo di riferimento (USD)

Quantità
Prezzo unitario
est. Prezzo

1: ~~0,59 USD~~; ~~0,59 USD~~

10: ~~0,48 USD~~; ~~4,78 USD~~

100: ~~0,36 USD~~; ~~36,30 USD~~

500: ~~0,30 USD~~; ~~150,00 USD~~

1000: ~~0,24 USD~~; ~~240,00 USD~~

A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.

Iniziare con

SI232 45
SI23 561
SI2 1125

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SI2329DS-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes