PSMN8R5-100PSQ

Mfr. #:: PSMN8R5-100PSQ
Produttore:: Nexperia
Descrizione:: IGBT Transistors MOSFET PSMN8R5-100PS/SIL3P/RAILH
Ciclo vitale:: Nuovo da questo produttore.
Scheda dati:: PSMN8R5-100PSQ Scheda dati
Consegna:: DHL FedEx Ups TNT EMS
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ECAD Model:

Attributo del prodotto
Valore attributo

Produttore: NXP

categoria di prodotto: FET - Single

Confezione: Tubo

Unità di peso: 0.211644 oz

Stile di montaggio: Foro passante

Pacchetto-Custodia: TO-220-3

Tecnologia: si

Pd-Power-Dissipazione: 263 W

Tempo di caduta: 43 ns

Ora di alzarsi: 35 ns

Id-Continuo-Scarico-Corrente: 100 A

Vds-Drain-Source-Breakdown-Voltage: 100 V

Vgs-th-Gate-Sorgente-Soglia-Tensione: 4 V

Rds-On-Drain-Source-Resistenza: 22.6 mOhms

Polarità del transistor: Canale N

Tempo di ritardo allo spegnimento tipico: 87 ns

Tempo di ritardo all'accensione tipico: 20 ns

Qg-Gate-Carica: 111 nC

Tags: PSMN8R5-100P, PSMN8R5-100, PSMN8R5-1, PSMN8R5, PSMN8, PSMN, PSM

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We provide 90-360 days warranty.

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

PSMN8R5-100PSQ Descrizione

***ark: Mosfet Transistor, N Channel, 100 A, 100 V, 6400 Ohm, 10 V, 3 V Rohs Compliant: Yes

***peria: PSMN8R5-100PS - N-channel 100 V 8.5 mΩ standard level MOSFET in TO220

***ical: Trans MOSFET N-CH 100V 100A 3-Pin(3+Tab) TO-220AB Rail

***i-Key: MOSFET N CH 100V 100A TO-220

***ment14 APAC: Prices include import duty and tax. MOSFET, N-CH, 100V, 100A, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0064ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:263W; Transistor Case Style:TO-220AB; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (15-Jan-2018); Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +175°C

***nell: MOSFET, CANALE N, 100V, 100A, TO-220AB; Polarità Transistor:Canale N; Corrente Continua di Drain Id:100A; Tensione Drain Source Vds:100V; Resistenza di Attivazione Rds(on):0.0064ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3V; Dissipazione di Potenza Pd:263W; Modello Case Transistor:TO-220AB; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):-; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018); Intervallo Temperatura di Esercizio:Da -55°C a +175°C; Temperatura di Esercizio Min:-55°C

Market price

Parte #	Mfg.	Descrizione	Azione	Prezzo
PSMN8R5-100PSQ DISTI # 1727-1053-ND	Nexperia	MOSFET N-CH 100V 100A TO-220 RoHS: Compliant Min Qty: 1 Container: Tube	3989In Stock	5000:$0.8580 2500:$0.8910 500:$1.1550 100:$1.4058 50:$1.6500 10:$1.7490 1:$1.9500
PSMN8R5-100PSQ DISTI # PSMN8R5-100PSQ	Nexperia	Trans MOSFET N-CH 100V 100A 3-Pin(3+Tab) TO-220AB Rail (Alt: PSMN8R5-100PSQ) RoHS: Compliant Min Qty: 50	Europe - 550	500:€0.7329 300:€0.7849 200:€0.8459 100:€0.9159 50:€1.0999
PSMN8R5-100PSQ DISTI # PSMN8R5-100PSQ	Nexperia	Trans MOSFET N-CH 100V 100A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube (Alt: PSMN8R5-100PSQ) RoHS: Compliant Min Qty: 5000 Container: Tube	Americas - 0	50000:$0.7219 25000:$0.7399 15000:$0.7589 10000:$0.7789 5000:$0.7889
PSMN8R5-100PSQ DISTI # PSMN8R5-100PSQ	Nexperia	Trans MOSFET N-CH 100V 100A 3-Pin(3+Tab) TO-220AB Rail - Bulk (Alt: PSMN8R5-100PSQ) RoHS: Compliant Min Qty: 417 Container: Bulk	Americas - 0	4170:$0.7219 2085:$0.7399 1251:$0.7589 834:$0.7789 417:$0.7889
PSMN8R5-100PSQ DISTI # 53W9724	Nexperia	MOSFET Transistor, N Channel, 100 A, 100 V, 6400 ohm, 10 V, 3 V RoHS Compliant: Yes	1841	1:$1.0100
PSMN8R5-100PSQ DISTI # 771-PSMN8R5-100PSQ	Nexperia	MOSFET PSMN8R5-100PS/SIL3P/STANDARD M RoHS: Compliant	0	5000:$0.7810 10000:$0.7500
PSMN8R5-100PSQ	NXP Semiconductors	Now Nexperia PSMN8R5-100PSQ - Power Field-Effect Transistor, 100A I(D), 100V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Not Compliant	289	1000:$0.7900 500:$0.8300 100:$0.8700 25:$0.9000 1:$0.9700
PSMN8R5-100PSQ DISTI # 2254226	Nexperia	MOSFET, N-CH, 100V, 100A, TO-220AB RoHS: Compliant	1858	1:$1.9200
PSMN8R5-100PSQ DISTI # 2254226	Nexperia	MOSFET, N-CH, 100V, 100A, TO-220AB RoHS: Compliant	1856	500:£0.8630 250:£0.9880 100:£1.1100 25:£1.2400 5:£1.7300

Prodotti correlati

Immagine	Parte #	Descrizione
	Mfr.#: PSMN8R5-100ESQ OMO.#: OMO-PSMN8R5-100ESQ	MOSFET PSMN8R5-100ES/I2PAK/STANDARD M
	Mfr.#: PSMN8R5-60YS,115 OMO.#: OMO-PSMN8R5-60YS-115	MOSFET N-CHANNEL 60V STD LEVEL MOSFET
	Mfr.#: PSMN8R5-100XSQ OMO.#: OMO-PSMN8R5-100XSQ	MOSFET PSMN8R5-100XS/TO-220F/STANDARD
	Mfr.#: PSMN8R5-100PS OMO.#: OMO-PSMN8R5-100PS-1190	Nuovo e originale
	Mfr.#: PSMN8R5-100XS OMO.#: OMO-PSMN8R5-100XS-1190	Nuovo e originale
	Mfr.#: PSMN8R5-60YS OMO.#: OMO-PSMN8R5-60YS-1190	Nuovo e originale
	Mfr.#: PSMN8R5-100ESQ OMO.#: OMO-PSMN8R5-100ESQ-NEXPERIA	IGBT Transistors MOSFET PSMN8R5-100ES/I2PAK/RAILH
	Mfr.#: PSMN8R5-100PSQ OMO.#: OMO-PSMN8R5-100PSQ-NEXPERIA	IGBT Transistors MOSFET PSMN8R5-100PS/SIL3P/RAILH
	Mfr.#: PSMN8R5-108ES127 OMO.#: OMO-PSMN8R5-108ES127-1190	Now Nexperia PSMN8R5-108ES - Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
	Mfr.#: PSMN8R5-100PSFQ OMO.#: OMO-PSMN8R5-100PSFQ-NEXPERIA	MOSFET N-CH 100V 98A TO220AB

Disponibilità

Azione:: Available
Su ordine:: 1500
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Il prezzo attuale di PSMN8R5-100PSQ è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]

Prezzo di riferimento (USD)

Quantità
Prezzo unitario
est. Prezzo

1: ~~1,08 USD~~; ~~1,08 USD~~

10: ~~1,03 USD~~; ~~10,29 USD~~

100: ~~0,97 USD~~; ~~97,46 USD~~

500: ~~0,92 USD~~; ~~460,20 USD~~

1000: ~~0,87 USD~~; ~~866,30 USD~~

Iniziare con

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PSMN8R5-100PSQ

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes