IPB65R110CFDAATMA1

Mfr. #:: IPB65R110CFDAATMA1
Produttore:: Infineon Technologies
Descrizione:: RF Bipolar Transistors MOSFET N-Ch 650V 99.6A D2PAK-2
Ciclo vitale:: Nuovo da questo produttore.
Scheda dati:: IPB65R110CFDAATMA1 Scheda dati
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Maggiori informazioni:: IPB65R110CFDAATMA1 maggiori informazioni

Attributo del prodotto
Valore attributo

Produttore: Tecnologie Infineon

categoria di prodotto: Transistor - FET, MOSFET - Singoli

Serie: IPB65R110

Confezione: Bobina

Alias parziali: IPB65R110CFDA IPB65R110CFDAXT SP000896402

Unità di peso: 0.068654 oz

Nome depositato: CoolMOS

Pacchetto-Custodia: TO-263-3

Tecnologia: si

Numero di canali: 1 Channel

Tipo a transistor: 1 N-Channel

Id-Continuo-Scarico-Corrente: 99.6 A

Vds-Drain-Source-Breakdown-Voltage: 650 V

Rds-On-Drain-Source-Resistenza: 110 mOhms

Polarità del transistor: Canale N

Tags: IPB65R110CFDA, IPB65R11, IPB65R1, IPB65, IPB6, IPB

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPB65R110CFDAATMA1 Descrizione

***ical: Trans MOSFET N-CH 650V 31.2A Automotive 3-Pin(2+Tab) D2PAK T/R

***p One Stop Japan: Trans MOSFET N-CH 650V 31.2A Automotive 3-Pin(2+Tab) TO-263 T/R

***et Europe: Trans MOSFET N-CH 650V 31.2A 3-Pin TO-263 T/R

***ronik: N-CH 650V 31,2A 110mOhm TO263-3

***i-Key: MOSFET N-CH TO263-3

***ark: Mosfet, N-Ch, Aec-Q101, 650V, To-263-3; Transistor Polarity:n Channel; Continuous Drain Current Id:31.2A; Drain Source Voltage Vds:650V; On Resistance Rds(On):0.099Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Rohs Compliant: Yes

***ment14 APAC: Prices include import duty and tax. MOSFET, N-CH, AEC-Q101, 650V, TO-263-3; Transistor Polarity:N Channel; Continuous Drain Current Id:31.2A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.099ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:277.8mW; Transistor Case Style:TO-263; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:CoolMOS CFDA Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)

***nell: MOSFET, CANALE N, AEC-Q101 650V TO-263-3; Polarità Transistor:Canale N; Corrente Continua di Drain Id:31.2A; Tensione Drain Source Vds:650V; Resistenza di Attivazione Rds(on):0.099ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:4V; Dissipazione di Potenza Pd:277.8mW; Modello Case Transistor:TO-263; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:CoolMOS CFDA Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)

***ineon: 650V CoolMOS CFDA is Infineon's second generation of market leading automotive qualified high voltage CoolMOS MOSFET. In addition to the well-known attributes of high quality and reliability required by the automotive industry, the new CoolMOS CFDA series provides now also an integrated fast body diode. | Summary of Features: First 650V automotive qualified technology with integrated fast body diode on the market; Limited voltage overshoot during hard commutation self limiting di/dt and dv/dt; Low gate charge value Q g; Low Q rr at repetitive commutation on body diode & lowQ oss; Reduced turn on and turn of delay times; Compliant to AEC Q101 standard | Benefits: Increased safety margin due to higher breakdown voltage; Reduced EMI appearance and easy to design in; Better light load efficiency; Lower switching losses; Higher switching frequency and/or higher duty cycle possible; High quality and reliability | Target Applications: Unidirectional and bidirectional DC-DC converter; Battery charger; HID lighting

IPB65R110CFDAATMA1 Maggiori informazioni

CoolMOS™ Power Transistors: Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.

Market price

Parte #	Mfg.	Descrizione	Azione	Prezzo
IPB65R110CFDAATMA1 DISTI # IPB65R110CFDAATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH TO263-3 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	1000In Stock	1000:$3.8767
IPB65R110CFDAATMA1 DISTI # IPB65R110CFDAATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH TO263-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	1000In Stock	500:$4.5846 100:$5.4720 10:$6.6550 1:$7.3900
IPB65R110CFDAATMA1 DISTI # IPB65R110CFDAATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH TO263-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	1000In Stock	500:$4.5846 100:$5.4720 10:$6.6550 1:$7.3900
IPB65R110CFDAATMA1 DISTI # IPB65R110CFDAATMA1	Infineon Technologies AG	Trans MOSFET N-CH 650V 31.2A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB65R110CFDAATMA1) RoHS: Compliant Min Qty: 1000 Container: Reel	Americas - 0	1000:$3.3900 2000:$3.3900 4000:$3.3900 6000:$3.3900 10000:$3.3900
IPB65R110CFDAATMA1 DISTI # SP000896402	Infineon Technologies AG	Trans MOSFET N-CH 650V 31.2A 3-Pin TO-263 T/R (Alt: SP000896402) RoHS: Compliant Min Qty: 1000 Container: Tape and Reel	Europe - 0	1000:€3.5900 2000:€3.3900 4000:€3.2900 6000:€3.0900 10000:€2.7900
IPB65R110CFDAATMA1 DISTI # 13AC9032	Infineon Technologies AG	MOSFET, N-CH, AEC-Q101, 650V, TO-263-3,Transistor Polarity:N Channel,Continuous Drain Current Id:31.2A,Drain Source Voltage Vds:650V,On Resistance Rds(on):0.099ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power RoHS Compliant: Yes	40	500:$4.0500 250:$4.4400 100:$4.6500 50:$5.0100 25:$5.3600 10:$5.6200 1:$6.2100
IPB65R110CFDA DISTI # 726-IPB65R110CFDA	Infineon Technologies AG	MOSFET N-Ch 650V 99.6A D2PAK-2 RoHS: Compliant	725	1:$6.2100 10:$5.6100 25:$5.3500 100:$4.6400 250:$4.4300 500:$4.0400 1000:$3.5200 2000:$3.3900
IPB65R110CFDAATMA1 DISTI # 726-IPB65R110CFDAATM	Infineon Technologies AG	MOSFET N-Ch 650V 99.6A D2PAK-2 RoHS: Compliant	995	1:$6.2100 10:$5.6100 25:$5.3500 100:$4.6400 250:$4.4300 500:$4.0400 1000:$3.5200 2000:$3.3900
IPB65R110CFDAATMA1 DISTI # 2726046	Infineon Technologies AG	MOSFET, N-CH, AEC-Q101, 650V, TO-263-3 RoHS: Compliant	130	100:£4.2600 10:£4.9100 1:£6.2800
IPB65R110CFDAATMA1 DISTI # 2726046	Infineon Technologies AG	MOSFET, N-CH, AEC-Q101, 650V, TO-263-3 RoHS: Compliant	40	500:$7.3100 100:$8.7300 10:$10.6100 1:$11.7900

Prodotti correlati

Immagine	Parte #	Descrizione
	Mfr.#: IPB65R110CFDA OMO.#: OMO-IPB65R110CFDA	MOSFET N-Ch 650V 99.6A D2PAK-2
	Mfr.#: IPB65R110CFDAATMA1 OMO.#: OMO-IPB65R110CFDAATMA1	MOSFET N-Ch 650V 99.6A D2PAK-2
	Mfr.#: IPB65R110CFDATMA1 OMO.#: OMO-IPB65R110CFDATMA1	MOSFET N-Ch 700V 31.2A D2PAK-2 CoolMOS CFD2
	Mfr.#: IPB65R110CFDATMA2 OMO.#: OMO-IPB65R110CFDATMA2-INFINEON-TECHNOLOGIES	HIGH POWER_LEGACY
	Mfr.#: IPB65R110CFD OMO.#: OMO-IPB65R110CFD-1190	MOSFET N-Ch 700V 31.2A D2PAK-2 CoolMOS CFD2
	Mfr.#: IPB65R110CFD 65F6110 OMO.#: OMO-IPB65R110CFD-65F6110-1190	Nuovo e originale
	Mfr.#: IPB65R110CFDA OMO.#: OMO-IPB65R110CFDA-1190	Trans MOSFET N-CH 650V 31.2A 3-Pin TO-263 T/R (Alt: IPB65R110CFDA)
	Mfr.#: IPB65R110CFDA 65F6110A OMO.#: OMO-IPB65R110CFDA-65F6110A-1190	Nuovo e originale
	Mfr.#: IPB65R110CFDATMA1 OMO.#: OMO-IPB65R110CFDATMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 650V 31.2A TO263
	Mfr.#: IPB65R110CFDAATMA1 OMO.#: OMO-IPB65R110CFDAATMA1-INFINEON-TECHNOLOGIES	RF Bipolar Transistors MOSFET N-Ch 650V 99.6A D2PAK-2

Disponibilità

Azione:: Available
Su ordine:: 3500
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Il prezzo attuale di IPB65R110CFDAATMA1 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]

Prezzo di riferimento (USD)

Quantità
Prezzo unitario
est. Prezzo

1: ~~4,56 USD~~; ~~4,56 USD~~

10: ~~4,33 USD~~; ~~43,33 USD~~

100: ~~4,11 USD~~; ~~410,54 USD~~

500: ~~3,88 USD~~; ~~1 938,65 USD~~

1000: ~~3,65 USD~~; ~~3 649,20 USD~~

Iniziare con

IPB65R110CFDA 6
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IPB65R110CFDAATMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes