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IPB65R110CFDATMA1

IPB65R110CFDATMA1
Mfr. #:
IPB65R110CFDATMA1
Produttore:
Infineon Technologies
Descrizione:
MOSFET N-Ch 700V 31.2A D2PAK-2 CoolMOS CFD2
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IPB65R110CFDATMA1 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
IPB65R110CFDATMA1 maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
Infineon
Categoria di prodotto:
MOSFET
RoHS:
Y
Tecnologia:
si
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
TO-263-3
Numero di canali:
1 Channel
Polarità del transistor:
Canale N
Vds - Tensione di rottura Drain-Source:
650 V
Id - Corrente di scarico continua:
31.2 A
Rds On - Resistenza Drain-Source:
99 mOhms
Vgs th - Tensione di soglia gate-source:
3.5 V
Vgs - Tensione Gate-Source:
20 V
Qg - Carica cancello:
118 nC
Temperatura di esercizio minima:
- 40 C
Temperatura massima di esercizio:
+ 150 C
Pd - Dissipazione di potenza:
277.8 W
Configurazione:
Separare
Modalità canale:
Aumento
Nome depositato:
CoolMOS
Confezione:
Bobina
Altezza:
4.4 mm
Lunghezza:
10 mm
Serie:
CoolMOS CFDA
Tipo di transistor:
1 N-Channel
Larghezza:
9.25 mm
Marca:
Tecnologie Infineon
Tempo di caduta:
6 ns
Tipologia di prodotto:
MOSFET
Ora di alzarsi:
11 ns
Quantità confezione di fabbrica:
1000
sottocategoria:
MOSFET
Tempo di ritardo allo spegnimento tipico:
68 ns
Tempo di ritardo di accensione tipico:
16 ns
Parte # Alias:
IPB65R110CFD IPB65R11CFDXT SP000896400
Unità di peso:
0.139332 oz
Tags
IPB65R110CFDA, IPB65R11, IPB65R1, IPB65, IPB6, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 650 V 110 mOhm 118 nC CoolMOS™ Power Mosfet - D2PAK
***ical
Trans MOSFET N-CH 700V 31.2A 3-Pin(2+Tab) D2PAK T/R
***et
Trans MOSFET N-CH 650V 31.2A 3-Pin TO-263 T/R
***Components
MOSFET N-Ch 700V 31.2A CoolMOS TO263
***an P&S
650V,31.2A,N-channel Power MOSFET
***ark
High Power_Legacy Rohs Compliant: Yes
***ronik
N-CH 650V 31,2A 99mOhm TO263-3
***i-Key
HIGH POWER_LEGACY
***ment14 APAC
MOSFET, N CH, 700V, 31.2A, TO-263-3; Transistor Polarity:N Channel; Continuous Drain Current Id:31.2A; Drain Source Voltage Vds:700V; On Resistance Rds(on):0.099ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:-; Transistor Case Style:TO-263; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, N CH, 700V, 31.2A, TO-263-3; Biegunowość tranzystora:Kanał N; Prąd ciągły Id drenu:31.2A; Napięcie drenu / źródła Vds:700V; Rezystancja przewodzenia Rds(on):0.099ohm; Napięcie Vgs pomiaru Rds(on):10V; Napięcie progowe Vgs:4V; Straty mocy Pd:-; Rodzaj obudowy tranzystora:TO-263; Liczba pinów:3piny/-ów; Temperatura robocza, maks.:150°C; Asortyment produktów:-; Kwalifikacja motoryzacyjna:-; Wskaźnik wrażliwości na wilgoć MSL:MSL 1 - nieograniczone; Substancje SVHC:No SVHC (27-Jun-2018)
***ineon
650V CoolMOS CFD2 is Infineon's second generation of market leading high voltage CoolMOS MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improved energy efficiency. The softer commutation behavior and therefore better EMI behavior gives this product a clear advantage in comparison with competitor parts. | Summary of Features: 650V technology with integrated fast body diode; Limited voltage overshoot during hard commutation; Significant Q g reduction compared to 600V CFD technology; Tighter R DS(ON) max to R DS(on) typ window; Easy to design-in; Lower price compared to 600V CFD technology | Benefits: Low switching losses due to low Q rr at repetitive commutation on body diode; Self limiting di/dt and dv/dt; Low Q oss; Reduced turn on and turn of delay times; Outstanding CoolMOS quality | Target Applications: Telecom; Server; Solar; HID lamp ballast; LED lighting; eMobility
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
Parte # Mfg. Descrizione Azione Prezzo
IPB65R110CFDATMA1
DISTI # V36:1790_06378229		Infineon Technologies AGTrans MOSFET N-CH 700V 31.2A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		0
  • 1000000:$3.0830
  • 500000:$3.0860
  • 100000:$3.3200
  • 10000:$3.7210
  • 1000:$3.7870
IPB65R110CFDATMA1
DISTI # V72:2272_06378229		Infineon Technologies AGTrans MOSFET N-CH 700V 31.2A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		0
    IPB65R110CFDATMA1
    DISTI # IPB65R110CFDATMA1TR-ND    		Infineon Technologies AGMOSFET N-CH 650V 31.2A TO263
    RoHS: Compliant
    Min Qty: 1000
    Container: Tape & Reel (TR)    		On Order
    • 2000:$2.9983
    • 1000:$3.1561
    IPB65R110CFDATMA1
    DISTI # IPB65R110CFDATMA1CT-ND    		Infineon Technologies AGMOSFET N-CH 650V 31.2A TO263
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Temporarily Out of Stock
    • 500:$3.8545
    • 100:$4.5279
    • 10:$5.5260
    • 1:$6.1500
    IPB65R110CFDATMA1
    DISTI # IPB65R110CFDATMA1DKR-ND    		Infineon Technologies AGMOSFET N-CH 650V 31.2A TO263
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		Temporarily Out of Stock
    • 500:$3.8545
    • 100:$4.5279
    • 10:$5.5260
    • 1:$6.1500
    IPB65R110CFDATMA1
    DISTI # IPB65R110CFDATMA1    		Infineon Technologies AGTrans MOSFET N-CH 700V 31.2A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB65R110CFDATMA1)
    RoHS: Compliant
    Min Qty: 1000
    Container: Reel    		Americas - 0
    • 10000:$2.7281
    • 6000:$2.7775
    • 4000:$2.8742
    • 2000:$2.9819
    • 1000:$3.0937
    IPB65R110CFDATMA1
    DISTI # SP000896400    		Infineon Technologies AGTrans MOSFET N-CH 700V 31.2A 3-Pin(2+Tab) TO-263 (Alt: SP000896400)
    RoHS: Compliant
    Min Qty: 1000    		Europe - 0
    • 10000:€2.2900
    • 6000:€2.4900
    • 4000:€2.6900
    • 2000:€2.7900
    • 1000:€2.8900
    IPB65R110CFDATMA1.
    DISTI # 29AC7028    		Infineon Technologies AGHIGH POWER_LEGACY ROHS COMPLIANT: YES0
    • 10000:$2.7300
    • 6000:$2.7800
    • 4000:$2.8800
    • 2000:$2.9900
    • 1:$3.1000
    IPB65R110CFD
    DISTI # 726-IPB65R110CFD    		Infineon Technologies AGMOSFET N-Ch 700V 31.2A D2PAK-2 CoolMOS CFD2
    RoHS: Compliant    		2027
    • 1:$5.6800
    • 10:$4.8300
    • 100:$4.1800
    • 250:$3.9700
    • 500:$3.5600
    • 1000:$3.0000
    IPB65R110CFDATMA1
    DISTI # 726-IPB65R110CFDATMA    		Infineon Technologies AGMOSFET N-Ch 700V 31.2A D2PAK-2 CoolMOS CFD2
    RoHS: Compliant    		1000
    • 1:$5.6800
    • 10:$4.8300
    • 100:$4.1800
    • 250:$3.9700
    • 500:$3.5600
    • 1000:$3.0000
    IPB65R110CFDATMA1Infineon Technologies AG 
    RoHS: Not Compliant    		140Cut Tape/Mini-Reel
    • 1:$4.1300
    • 50:$3.4900
    • 100:$3.3900
    • 250:$3.2600
    • 500:$3.1700
    IPB65R110CFDATMA1
    DISTI # 2443390    		Infineon Technologies AGMOSFET, N CH, 700V, 31.2A, TO-263-3
    RoHS: Compliant    		0
    • 1000:$4.5200
    • 500:$5.3600
    • 250:$5.9800
    • 100:$6.3000
    • 10:$7.2800
    • 1:$8.5600
    IPB65R110CFDATMA1
    DISTI # 2443390RL    		Infineon Technologies AGMOSFET, N CH, 700V, 31.2A, TO-263-3
    RoHS: Compliant    		0
    • 1000:$4.5200
    • 500:$5.3600
    • 250:$5.9800
    • 100:$6.3000
    • 10:$7.2800
    • 1:$8.5600
    IPB65R110CFDATMA1
    DISTI # XSFP00000100145    		Infineon Technologies AG 
    RoHS: Compliant    		76 in Stock0 on Order
    • 76:$5.5100
    • 25:$5.9000
    Immagine Parte # Descrizione
    STB37N60DM2AG

    Mfr.#: STB37N60DM2AG

    OMO.#: OMO-STB37N60DM2AG

    		 MOSFET Automotive-grade N-channel 600 V, 0.094 Ohm typ., 28 A MDmesh DM2 Power MOSFET in a D2PAK package
    STB28N65M2

    Mfr.#: STB28N65M2

    OMO.#: OMO-STB28N65M2

    		 MOSFET N-channel 650 V, 0.15 Ohm typ., 20 A MDmesh M2 Power MOSFET in D2PAK package
    STB28N65M2

    Mfr.#: STB28N65M2

    OMO.#: OMO-STB28N65M2-STMICROELECTRONICS

    		 MOSFET N-CH 650V 20A D2PAK
    STB37N60DM2AG

    Mfr.#: STB37N60DM2AG

    OMO.#: OMO-STB37N60DM2AG-STMICROELECTRONICS

    		 MOSFET N-CH 600V 28A
    Disponibilità
    Azione:
    Available
    Su ordine:
    1984
    Inserisci la quantità:
    Il prezzo attuale di IPB65R110CFDATMA1 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
    Prezzo di riferimento (USD)
    Quantità
    Prezzo unitario
    est. Prezzo
    1
    5,68 USD
    5,68 USD
    10
    4,83 USD
    48,30 USD
    100
    4,18 USD
    418,00 USD
    250
    3,97 USD
    992,50 USD
    500
    3,56 USD
    1 780,00 USD
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