STB28N65M2

Mfr. #:: STB28N65M2
Produttore:: STMicroelectronics
Descrizione:: MOSFET N-channel 650 V, 0.15 Ohm typ., 20 A MDmesh M2 Power MOSFET in D2PAK package
Ciclo vitale:: Nuovo da questo produttore.
Scheda dati:: STB28N65M2 Scheda dati
Consegna:: DHL FedEx Ups TNT EMS
Pagamento:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:: STB28N65M2 maggiori informazioni STB28N65M2 Product Details

Attributo del prodotto
Valore attributo

Produttore:: STMicroelectronics

Categoria di prodotto:: MOSFET

RoHS:: Y

Tecnologia:: si

Stile di montaggio:: SMD/SMT

Pacchetto/custodia:: TO-263-3

Numero di canali:: 1 Channel

Polarità del transistor:: Canale N

Vds - Tensione di rottura Drain-Source:: 650 V

Id - Corrente di scarico continua:: 20 A

Rds On - Resistenza Drain-Source:: 150 mOhms

Vgs th - Tensione di soglia gate-source:: 2 V

Vgs - Tensione Gate-Source:: 25 V

Qg - Carica cancello:: 35 nC

Temperatura massima di esercizio:: + 150 C

Pd - Dissipazione di potenza:: 170 W

Configurazione:: Separare

Modalità canale:: Aumento

Nome depositato:: MDmesh

Confezione:: Bobina

Serie:: STB28N65M2

Tipo di transistor:: 1 N-Channel

Marca:: STMicroelectronics

Tempo di caduta:: 8.8 ns

Tipologia di prodotto:: MOSFET

Ora di alzarsi:: 10 ns

Quantità confezione di fabbrica:: 1000

sottocategoria:: MOSFET

Tempo di ritardo allo spegnimento tipico:: 59 ns

Tempo di ritardo di accensione tipico:: 13.4 ns

Unità di peso:: 0.139332 oz

Tags: STB28N6, STB28, STB2, STB

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

STB28N65M2 Descrizione

***ure Electronics: N-Channel 650 V 0.18 Ohm 35 nC 170 W SMT MDmesh M2 Mosfet - D2PAK

***ical: Trans MOSFET N-CH 650V 20A 3-Pin(2+Tab) D2PAK T/R

***et Europe: Trans MOSFET N-CH 650V 20A 3-Pin D2PAK T/R

***ied Electronics & Automation: MOSFET N-Ch 650V 20A MDmesh M2 D2PAK

***Components: MOSFET N-CH 650V 20A MDMESH M2 D2PAK

***i-Key: MOSFET N-CH 650V 20A D2PAK

***ark: Mosfet, N-Ch, 650V, 20A, 170W, To-263; Transistor Polarity:n Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:650V; On Resistance Rds(On):0.15Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes

***ment14 APAC: Prices include import duty and tax. MOSFET, N-CH, 650V, 20A, 170W, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.15ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:170W; Transistor Case Style:TO-263; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:MDmesh M2 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2019)

***nell: MOSFET, CA-N, 650V, 20A, 170W, TO-263; Polarità Transistor:Canale N; Corrente Continua di Drain Id:20A; Tensione Drain Source Vds:650V; Resistenza di Attivazione Rds(on):0.15ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3V; Dissipazione di Potenza Pd:170W; Modello Case Transistor:TO-263; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:MDmesh M2 Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (15-Jan-2019)

STB28N65M2 Maggiori informazioni

Standard Products: STMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discrete and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of design aids, including SPICE, IBIS models and simulation tools, are available to make adding to a design-in easy.

MDmesh™ II Power MOSFETs: STMicroelectronics 600 and 650V MDmesh™ M2 series of super-junction Power MOSFETs are optimized for soft-switching applications (LLC resonant power supplies) thanks to the optimized trade-off between RDS(on), gate charge (Qg) and intrinsic capacitances (Ciss, Coss). They also are suitable for PFC applications, especially at light loads.

Market price

Parte #	Mfg.	Descrizione	Azione	Prezzo
STB28N65M2 DISTI # V36:1790_13796636	STMicroelectronics	Trans MOSFET N-CH 650V 20A 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	0
STB28N65M2 DISTI # V72:2272_17691764	STMicroelectronics	Trans MOSFET N-CH 650V 20A 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	0
STB28N65M2 DISTI # 497-15456-1-ND	STMicroelectronics	MOSFET N-CH 650V 20A D2PAK RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	818In Stock	500:$1.7261 100:$2.1009 10:$2.6140 1:$2.9100
STB28N65M2 DISTI # 497-15456-6-ND	STMicroelectronics	MOSFET N-CH 650V 20A D2PAK RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	818In Stock	500:$1.7261 100:$2.1009 10:$2.6140 1:$2.9100
STB28N65M2 DISTI # 497-15456-2-ND	STMicroelectronics	MOSFET N-CH 650V 20A D2PAK RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	On Order	5000:$1.2449 2000:$1.2928 1000:$1.3885
STB28N65M2 DISTI # STB28N65M2	STMicroelectronics	Trans MOSFET N-CH 650V 20A 3-Pin D2PAK T/R - Tape and Reel (Alt: STB28N65M2) RoHS: Not Compliant Min Qty: 1000 Container: Reel	Americas - 2000	6000:$1.0900 10000:$1.0900 4000:$1.1900 1000:$1.2900 2000:$1.2900
STB28N65M2 DISTI # STB28N65M2	STMicroelectronics	Trans MOSFET N-CH 650V 20A 3-Pin D2PAK T/R (Alt: STB28N65M2) RoHS: Compliant Min Qty: 1000 Container: Tape and Reel	Asia - 0	50000:$1.1316 25000:$1.1622 10000:$1.1944 5000:$1.2464 3000:$1.3030 2000:$1.3651 1000:$1.4333
STB28N65M2 DISTI # STB28N65M2	STMicroelectronics	Trans MOSFET N-CH 650V 20A 3-Pin D2PAK T/R (Alt: STB28N65M2) RoHS: Compliant Min Qty: 1000 Container: Tape and Reel	Europe - 0	6000:€1.0900 10000:€1.0900 4000:€1.1900 2000:€1.2900 1000:€1.5900
STB28N65M2 DISTI # 56Y0804	STMicroelectronics	PTD HIGH VOLTAGE	0	30000:$1.1400 18000:$1.1900 12000:$1.2400 6000:$1.3700 3000:$1.4400 1:$1.5400
STB28N65M2 DISTI # 07AH6948	STMicroelectronics	MOSFET, N-CH, 650V, 20A, 170W, TO-263,Transistor Polarity:N Channel,Continuous Drain Current Id:20A,Drain Source Voltage Vds:650V,On Resistance Rds(on):0.15ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power RoHS Compliant: Yes	0	500:$1.6100 250:$1.7200 100:$1.8400 50:$1.9900 25:$2.1500 10:$2.3000 1:$2.7100
STB28N65M2 DISTI # 511-STB28N65M2	STMicroelectronics	MOSFET N-channel 650 V, 0.15 Ohm typ., 20 A MDmesh M2 Power MOSFET in D2PAK package RoHS: Compliant	5090	1:$2.6800 10:$2.2800 100:$1.8200 500:$1.5900 1000:$1.3200 2000:$1.2300 5000:$1.1800
STB28N65M2 DISTI # 3129916	STMicroelectronics	MOSFET, N-CH, 650V, 20A, 170W, TO-263 RoHS: Compliant	1000	1000:$1.6100 500:$2.0700 250:$2.2300 100:$2.3700 10:$2.9800 1:$3.9400
STB28N65M2 DISTI # 3129916	STMicroelectronics	MOSFET, N-CH, 650V, 20A, 170W, TO-263	1000	500:£1.1900 250:£1.2800 100:£1.3600 10:£1.7100 1:£2.2600

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Disponibilità

Azione:: Available
Su ordine:: 1988
Inserisci la quantità:

Il prezzo attuale di STB28N65M2 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]

Prezzo di riferimento (USD)

Quantità
Prezzo unitario
est. Prezzo

1: ~~2,68 USD~~; ~~2,68 USD~~

10: ~~2,28 USD~~; ~~22,80 USD~~

100: ~~1,82 USD~~; ~~182,00 USD~~

500: ~~1,59 USD~~; ~~795,00 USD~~

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STB28N65M2

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes