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MRF8S7235NR3

MRF8S7235NR3
Mfr. #:
MRF8S7235NR3
Produttore:
NXP / Freescale
Descrizione:
RF MOSFET Transistors HV8 700MHZ OM780-2
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
MRF8S7235NR3 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
MRF8S7235NR3 DatasheetMRF8S7235NR3 Datasheet (P4-P6)MRF8S7235NR3 Datasheet (P7-P9)MRF8S7235NR3 Datasheet (P10-P12)MRF8S7235NR3 Datasheet (P13)
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore:
NXP
Categoria di prodotto:
Transistor MOSFET RF
RoHS:
Y
Tecnologia:
si
Guadagno:
21.8 dB
Potenza di uscita:
63 W
Temperatura massima di esercizio:
+ 150 C
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
OM-780-2
Confezione:
Bobina
Configurazione:
Separare
Frequenza operativa:
728 MHz to 768 MHz
Serie:
MRF8S7235N
Marca:
NXP / Freescale
Sensibile all'umidità:
sì
Tipologia di prodotto:
Transistor MOSFET RF
Quantità confezione di fabbrica:
250
sottocategoria:
MOSFET
Parte # Alias:
935314786528
Unità di peso:
0.108683 oz
Tags
MRF8S7, MRF8S, MRF8, MRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***W
RF Power Transistor,728 to 768 MHz, 260 W, Typ Gain in dB is 20 @ 728 MHz, 28 V, LDMOS, SOT1823
*** Semiconductors SCT
Single W-CDMA Lateral N-Channel RF Power MOSFET, 728-768 MHz, 63 W Avg., 28 V, FM2F, RoHS
***ical
Trans RF MOSFET N-CH 70V 3-Pin OM-780 EP
*** Electronic Components
RF MOSFET Transistors HV8 700MHZ OM780-2
***el Electronic
LDO Voltage Regulators ANA LDO REG
***(Formerly Allied Electronics)
IRLL110TRPBF N-channel MOSFET Transistor; 1.5 A; 100 V; 3 + Tab-Pin SOT-223
***eco
Trans MOSFET N Channel 100 Volt 1.5A 4-Pin (3+Tab) SOT-223 Tape and Reel
***ure Electronics
Single N-Channel 100 V 0.54 Ohms Surface Mount Power Mosfet - SOT-223-3
*** Source Electronics
Trans MOSFET N-CH 100V 1.5A 4-Pin(3+Tab) SOT-223 T/R / MOSFET N-CH 100V 1.5A SOT223
***nsix Microsemi
Power Field-Effect Transistor, 1.5A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA
***ure Electronics
P-Channel 20 V 38 mO 9.1 nC SMT Enhancement Mode Mosfet - SOT-23
***ical
Trans MOSFET P-CH 20V 4.3A Automotive 3-Pin SOT-23 T/R
***nell
MOSFET, P-CH, -20V, SOT-23-3; Transistor Polarity: P Channel; Continuous Drain Current Id: -4.3A; Drain Source Voltage Vds: -20V; On Resistance Rds(on): 0.025ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -1.4V; Power Dissipation Pd: 800mW; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
***ure Electronics
Single N-Channel 200 V 0.18 Ohms Surface Mount Power Mosfet - D2PAK-3
***ark
N CHANNEL MOSFET, 200V, 17A SMD-220; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:17A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:5V; Gate Source Threshold Voltage Max:2V RoHS Compliant: No
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 17A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***ure Electronics
N-Channel 50 V 16 A 0.047 Ohm Surface Mount Power Mosfet - TO-252AA
***emi
N-Channel Logic Level Power MOSFET 50V, 16A, 47mΩ
***ment14 APAC
MOSFET, N-CH, 50V, 16A, TO-252AA-3; Transistor Polarity:N Channel; Continuous Drain Current Id:16A; Source Voltage Vds:50V; On Resistance
***roFlash
Power Field-Effect Transistor, 16A I(D), 50V, 0.056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***rchild Semiconductor
These are N-Channel logic level power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use with logic level (5V) driving sources in applications such as programmable controllers, automotive switching, switching regulators, switching converters, motor relay drivers and emitter switches for bipolar transistors. This performance is accomplished through a special gate oxide design which provides full rated conductance at gate biases in the 3V to 5V range, thereby facilitating true on-off power control directly from logic circuit supply voltages. Formerly developmental type TA09871.
***emi
Dual N-Channel PowerTrench® MOSFET, 2.5V Specified, 20V, 6.5A, 30mΩ
***ure Electronics
Dual N-Channel 20 V 30 mOhm Surface Mount PowerTrench Mosfet - SOIC-8
***Yang
Transistor MOSFET Array Dual N-CH 20V 6.5A 8-Pin SOIC T/R - Product that comes on tape, but is not r
***el Electronic
ON SEMICONDUCTOR - FDS9926A - Dual MOSFET, Dual N Channel, 6.5 A, 20 V, 0.025 ohm, 4.5 V, 1 V
***ment14 APAC
MOSFET, DUAL, N, SMD, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:6.5A; Drain Source Voltage Vds:20V; On Resistance Rds(on):30mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:2W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:6.5A; Package / Case:SOIC; Power Dissipation Pd:2W; Termination Type:SMD; Voltage Vds Typ:20V; Voltage Vgs Max:1V; Voltage Vgs Rds on Measurement:4.5V
***rchild Semiconductor
These N-Channel 2.5V specified MOSFETs use Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 10V).
***hard Electronics
Mosfet; Power; N-ch; Vdss 100V; Rds(on) 0.54 Ohm; Id 4.3A; TO-252AA; Pd 25W; Vgs +/-10V
***ure Electronics
Single N-Channel 100 V 0.54 Ohms Surface Mount Power Mosfet - TO-252
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 4.3A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***ark
N Channel Mosfet, 100V, 4.3A, D-Pak; Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:4.3A; On Resistance Rds(On):0.54Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:5V Rohs Compliant: No
***ment14 APAC
MOSFET, N, 100V, 4.3A, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:4.3A; Drain Source Voltage Vds:100V; On Resistance Rds(on):540mohm; Rds(on) Test Voltage Vgs:5V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:25W; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D-PAK; Current Id Max:4.3A; Junction to Case Thermal Resistance A:5°C/W; On State resistance @ Vgs = 10V:540mohm; Package / Case:DPAK; Power Dissipation Pd:25W; Power Dissipation Pd:25W; Pulse Current Idm:17A; Termination Type:SMD; Voltage Vds Typ:100V; Voltage Vgs Max:10V; Voltage Vgs Rds on Measurement:5V; Voltage Vgs th Max:2V
Parte # Mfg. Descrizione Azione Prezzo
MRF8S7235NR3
DISTI # 25967907		NXP SemiconductorsTrans RF MOSFET N-CH 70V 3-Pin OM-780 EP T/R
RoHS: Compliant		220
  • 1:$143.4600
MRF8S7235NR3
DISTI # MRF8S7235NR3-ND		NXP SemiconductorsFET RF 70V 728MHZ OM780-2
RoHS: Compliant
Min Qty: 250
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 250:$96.3549
MRF8S7235NR3
DISTI # MRF8S7235NR3		Avnet, Inc.Trans MOSFET N-CH 70V 3-Pin OM-780 T/R - Tape and Reel (Alt: MRF8S7235NR3)
RoHS: Compliant
Min Qty: 250
Container: Reel		Americas - 0
  • 250:$105.5900
  • 500:$101.3900
  • 1000:$97.4900
  • 1500:$93.8900
  • 2500:$92.0900
MRF8S7235NR3
DISTI # 841-MRF8S7235NR3		NXP SemiconductorsRF MOSFET Transistors HV8 700MHZ OM780-2
RoHS: Compliant		0
  • 250:$94.1900
MRF8S7235NR3
DISTI # MRF8S7235NR3		NXP SemiconductorsRF POWER TRANSISTOR
RoHS: Compliant		0
  • 250:$108.6700
Immagine Parte # Descrizione
MRF8S7235NR3

Mfr.#: MRF8S7235NR3

OMO.#: OMO-MRF8S7235NR3

 RF MOSFET Transistors HV8 700MHZ OM780-2
MRF8S7170NR3

Mfr.#: MRF8S7170NR3

OMO.#: OMO-MRF8S7170NR3

 RF MOSFET Transistors HV8 700MHz 50W OM780-2
MRF8S7120NR3

Mfr.#: MRF8S7120NR3

OMO.#: OMO-MRF8S7120NR3-NXP-SEMICONDUCTORS

 FET RF 70V 768MHZ
MRF8S7170N

Mfr.#: MRF8S7170N

OMO.#: OMO-MRF8S7170N-1190

 Nuovo e originale
MRF8S7170NR3

Mfr.#: MRF8S7170NR3

OMO.#: OMO-MRF8S7170NR3-NXP-SEMICONDUCTORS

 RF MOSFET Transistors HV8 700MHz 50W OM780-2
MRF8S7235NR3

Mfr.#: MRF8S7235NR3

OMO.#: OMO-MRF8S7235NR3-NXP-SEMICONDUCTORS

 RF MOSFET Transistors HV8 700MHZ OM780-2
Disponibilità
Azione:
Available
Su ordine:
3000
Inserisci la quantità:
Il prezzo attuale di MRF8S7235NR3 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
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