SIS435DNT-T1-GE3

SIS435DNT-T1-GE3
Mfr. #:
SIS435DNT-T1-GE3
Produttore:
Vishay / Siliconix
Descrizione:
MOSFET -20V Vds 8V Vgs PowerPAK 1212-8T
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
SIS435DNT-T1-GE3 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIS435DNT-T1-GE3 DatasheetSIS435DNT-T1-GE3 Datasheet (P4-P6)SIS435DNT-T1-GE3 Datasheet (P7-P8)
ECAD Model:
Maggiori informazioni:
SIS435DNT-T1-GE3 maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
Vishay
Categoria di prodotto:
MOSFET
RoHS:
Y
Tecnologia:
si
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
PowerPAK-1212-8
Numero di canali:
1 Channel
Polarità del transistor:
Canale P
Vds - Tensione di rottura Drain-Source:
20 V
Id - Corrente di scarico continua:
30 A
Rds On - Resistenza Drain-Source:
4.4 mOhms
Vgs th - Tensione di soglia gate-source:
900 mV
Vgs - Tensione Gate-Source:
8 V
Qg - Carica cancello:
180 nC
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 150 C
Pd - Dissipazione di potenza:
39 W
Configurazione:
Separare
Modalità canale:
Aumento
Nome depositato:
TrenchFET, PowerPAK
Confezione:
Bobina
Serie:
SIS
Tipo di transistor:
1 P-Channel
Marca:
Vishay / Siliconix
Transconduttanza diretta - Min:
55 S
Tempo di caduta:
30 ns
Tipologia di prodotto:
MOSFET
Ora di alzarsi:
30 ns
Quantità confezione di fabbrica:
3000
sottocategoria:
MOSFET
Tempo di ritardo allo spegnimento tipico:
100 ns
Tempo di ritardo di accensione tipico:
40 ns
Tags
SIS43, SIS4, SIS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
SIS435DNT-T1-GE3 P-channel MOSFET Transistor; 22 A; 20 V; 8-Pin PowerPAK 1212
***ure Electronics
Single P-Channel 20 V 0.0140 Ohm 86 nC 3.7 W Silicon SMT Mosfet POWERPAK 12128
***ark
Transistor Polarity:p Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:22A; On Resistance Rds(On):0.0044Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:900Mv Rohs Compliant: Yes
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
TrenchFET® P-Channel MOSFETs
Vishay Siliconix TrenchFET® P-Channel MOSFETs feature the newest generation of P-channel silicon technology. This enables these devices to provide industry-best on-resistance specifications like 1.9 milliohms in the PowerPAK® SO-8. The P-channel MOSFETs have on-resistance as low as half the level of the next best devices on the market. These MOSFETs are available in two variants that employ either Generation III or Generation IV technology. The Gen-IV P-channel MOSFETs offer low on-resistance and come in a thermally enhanced compact package.
Parte # Mfg. Descrizione Azione Prezzo
SIS435DNT-T1-GE3
DISTI # V72:2272_09216159
Vishay IntertechnologiesTrans MOSFET P-CH 20V 22A 8-Pin PowerPAK 1212 T/R
RoHS: Compliant
1961
  • 1000:$0.3030
  • 500:$0.3752
  • 250:$0.4633
  • 100:$0.4653
  • 25:$0.5925
  • 10:$0.5969
  • 1:$0.6835
SIS435DNT-T1-GE3
DISTI # V36:1790_09216159
Vishay IntertechnologiesTrans MOSFET P-CH 20V 22A 8-Pin PowerPAK 1212 T/R
RoHS: Compliant
0
  • 3000000:$0.2727
  • 1500000:$0.2728
  • 300000:$0.2793
  • 30000:$0.2885
  • 3000:$0.2900
SIS435DNT-T1-GE3
DISTI # SIS435DNT-T1-GE3CT-ND
Vishay SiliconixMOSFET P-CH 20V 30A 1212-8
Min Qty: 1
Container: Cut Tape (CT)
2963In Stock
  • 1000:$0.3296
  • 500:$0.4120
  • 100:$0.5212
  • 10:$0.6800
  • 1:$0.7700
SIS435DNT-T1-GE3
DISTI # SIS435DNT-T1-GE3DKR-ND
Vishay SiliconixMOSFET P-CH 20V 30A 1212-8
Min Qty: 1
Container: Digi-Reel®
2963In Stock
  • 1000:$0.3296
  • 500:$0.4120
  • 100:$0.5212
  • 10:$0.6800
  • 1:$0.7700
SIS435DNT-T1-GE3
DISTI # SIS435DNT-T1-GE3TR-ND
Vishay SiliconixMOSFET P-CH 20V 30A 1212-8
Min Qty: 3000
Container: Tape & Reel (TR)
On Order
  • 15000:$0.2660
  • 6000:$0.2700
  • 3000:$0.2900
SIS435DNT-T1-GE3
DISTI # 31610622
Vishay IntertechnologiesTrans MOSFET P-CH 20V 22A 8-Pin PowerPAK 1212 T/R
RoHS: Compliant
1961
  • 1000:$0.3030
  • 500:$0.3752
  • 250:$0.4633
  • 100:$0.4653
  • 26:$0.5925
SIS435DNT-T1-GE3
DISTI # SIS435DNT-T1-GE3
Vishay IntertechnologiesTrans MOSFET P-CH -20V -22A 8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SIS435DNT-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Reel
Americas - 0
  • 30000:$0.2564
  • 18000:$0.2635
  • 12000:$0.2710
  • 6000:$0.2825
  • 3000:$0.2911
SIS435DNT-T1-GE3.
DISTI # 61AC1928
Vishay IntertechnologiesTransistor Polarity:P Channel,Continuous Drain Current Id:-22A,Drain Source Voltage Vds:-20V,On Resistance Rds(on):0.0044ohm,Rds(on) Test Voltage Vgs:-4.5V,Threshold Voltage Vgs:-900mV,Power Dissipation Pd:39W RoHS Compliant: Yes
RoHS: Compliant
0
  • 50000:$0.2580
  • 30000:$0.2700
  • 20000:$0.2900
  • 10000:$0.3100
  • 5000:$0.3360
  • 1:$0.3440
SIS435DNT-T1-GE3
DISTI # 70616573
Vishay SiliconixSIS435DNT-T1-GE3 P-channel MOSFET Transistor,22 A,20 V,8-Pin PowerPAK 1212
RoHS: Compliant
0
  • 300:$0.4000
  • 600:$0.3600
  • 1500:$0.3200
  • 3000:$0.3100
SIS435DNT-T1-GE3
DISTI # 78-SIS435DNT-T1-GE3
Vishay IntertechnologiesMOSFET -20V Vds 8V Vgs PowerPAK 1212-8T
RoHS: Compliant
3598
  • 1:$0.7700
  • 10:$0.6570
  • 100:$0.5050
  • 500:$0.4090
  • 1000:$0.3250
  • 3000:$0.2900
  • 6000:$0.2700
  • 9000:$0.2660
SIS435DNT-T1-GE3Vishay IntertechnologiesMOSFET -20V Vds 8V Vgs PowerPAK 1212-8TAmericas - 9000
  • 3000:$0.2880
  • 6000:$0.2700
  • 9000:$0.2640
  • 12000:$0.2560
Immagine Parte # Descrizione
USBLC6-2SC6

Mfr.#: USBLC6-2SC6

OMO.#: OMO-USBLC6-2SC6

TVS Diodes / ESD Suppressors ESD Protection Low Cap
SIS443DN-T1-GE3

Mfr.#: SIS443DN-T1-GE3

OMO.#: OMO-SIS443DN-T1-GE3

MOSFET -40V Vds 20V Vgs PowerPAK 1212-8
IRFZ48RSPBF

Mfr.#: IRFZ48RSPBF

OMO.#: OMO-IRFZ48RSPBF

MOSFET N-Chan 60V 50 Amp
DMT6007LFG-7

Mfr.#: DMT6007LFG-7

OMO.#: OMO-DMT6007LFG-7

MOSFET 60V N-Ch Enh FET 20Vgss 80A 62.5W
ERJ-2RKF1003X

Mfr.#: ERJ-2RKF1003X

OMO.#: OMO-ERJ-2RKF1003X

Thick Film Resistors - SMD 0402 100Kohms 1% AEC-Q200
ERJ-2RKF10R0X

Mfr.#: ERJ-2RKF10R0X

OMO.#: OMO-ERJ-2RKF10R0X

Thick Film Resistors - SMD 0402 10.0ohms 1% Tol AEC-Q200
DMT6007LFG-7

Mfr.#: DMT6007LFG-7

OMO.#: OMO-DMT6007LFG-7-DIODES

Trans MOSFET N-CH 60V 15A Automotive 8-Pin PowerDI EP T/R
1812L110/33MR

Mfr.#: 1812L110/33MR

OMO.#: OMO-1812L110-33MR-LITTELFUSE

Resettable Fuses - PPTC PTC 33V 1.10A POLY SURF MOUNT
IRFZ48RSPBF

Mfr.#: IRFZ48RSPBF

OMO.#: OMO-IRFZ48RSPBF-VISHAY

MOSFET N-CH 60V 50A D2PAK
SIS443DN-T1-GE3

Mfr.#: SIS443DN-T1-GE3

OMO.#: OMO-SIS443DN-T1-GE3-VISHAY

MOSFET P-CH 40V 35A PPAK 1212-8
Disponibilità
Azione:
Available
Su ordine:
1986
Inserisci la quantità:
Il prezzo attuale di SIS435DNT-T1-GE3 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
0,79 USD
0,79 USD
10
0,64 USD
6,38 USD
100
0,48 USD
48,50 USD
500
0,40 USD
200,00 USD
A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
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