NE3515S02-T1D-A

NE3515S02-T1D-A
Mfr. #:
NE3515S02-T1D-A
Produttore:
CEL
Descrizione:
RF JFET Transistors Super Low Noise Pseudomorphic
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
NE3515S02-T1D-A Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore
CEL
categoria di prodotto
Transistor - FET, MOSFET - Singoli
Confezione
Bobina
Stile di montaggio
SMD/SMT
Pacchetto-Custodia
S0-2
Tecnologia
GaAs
Tipo a transistor
pHEMT
Guadagno
12.5 dB
Pd-Power-Dissipazione
165 mW
Massima temperatura di esercizio
+ 125 C
Frequenza operativa
12 GHz
Id-Continuo-Scarico-Corrente
88 mA
Vds-Drain-Source-Breakdown-Voltage
4 V
Transconduttanza diretta-Min
70 mS
Vgs-Gate-Source-Breakdown-Voltage
- 3 V
Figura di rumore NF
0.3 dB
P1dB-Punto di compressione
14 dBm
Tags
NE3515, NE351, NE35, NE3
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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
FET RF HFET 12GHZ 2V 10MA S02
Parte # Mfg. Descrizione Azione Prezzo
NE3515S02-T1D-A
DISTI # NE3515S02-T1D-A-ND
California Eastern Laboratories (CEL)FET RF HFET 12GHZ 2V 10MA S02
RoHS: Compliant
Min Qty: 1
Container: Tape & Reel (TR)
Limited Supply - Call
    NE3515S02-T1D-A
    DISTI # 551-NE3515S02-T1D-A
    California Eastern Laboratories (CEL)RF JFET Transistors Super Low Noise Pseudomorphic
    RoHS: Compliant
    0
      Immagine Parte # Descrizione
      NE3515S02-T1C-A

      Mfr.#: NE3515S02-T1C-A

      OMO.#: OMO-NE3515S02-T1C-A

      RF JFET Transistors Super Low Noise Pseudomorphic
      NE3515S02-A

      Mfr.#: NE3515S02-A

      OMO.#: OMO-NE3515S02-A

      RF JFET Transistors X to Ku-BAND SUPER LOW NOISE AMP N-CH
      NE3515S02-T1D-A

      Mfr.#: NE3515S02-T1D-A

      OMO.#: OMO-NE3515S02-T1D-A

      RF JFET Transistors Super Low Noise Pseudomorphic
      NE3515S02-T1D-A

      Mfr.#: NE3515S02-T1D-A

      OMO.#: OMO-NE3515S02-T1D-A-CEL

      RF JFET Transistors Super Low Noise Pseudomorphic
      NE3515S02-A

      Mfr.#: NE3515S02-A

      OMO.#: OMO-NE3515S02-A-CEL

      RF JFET Transistors X to Ku-BAND SUPER LOW NOISE AMP N-CH
      NE3515S02-T1C-A

      Mfr.#: NE3515S02-T1C-A

      OMO.#: OMO-NE3515S02-T1C-A-CEL

      RF JFET Transistors Super Low Noise Pseudomorphic
      NE3515S02

      Mfr.#: NE3515S02

      OMO.#: OMO-NE3515S02-1190

      Nuovo e originale
      Disponibilità
      Azione:
      Available
      Su ordine:
      4000
      Inserisci la quantità:
      Il prezzo attuale di NE3515S02-T1D-A è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
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