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APT45GP120B2DQ2G

APT45GP120B2DQ2G
Mfr. #:
APT45GP120B2DQ2G
Produttore:
Microchip / Microsemi
Descrizione:
IGBT Transistors FG, IGBT-COMBI, 1200V, TO-247 T-MAX, RoHS
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
APT45GP120B2DQ2G Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
APT45GP120B2DQ2G DatasheetAPT45GP120B2DQ2G Datasheet (P4-P6)APT45GP120B2DQ2G Datasheet (P7-P9)
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore:
Microchip
Categoria di prodotto:
Transistor IGBT
RoHS:
Y
Tecnologia:
si
Pacchetto/custodia:
T-Max-3
Stile di montaggio:
Foro passante
Configurazione:
Separare
Tensione collettore-emettitore VCEO Max:
1.2 kV
Tensione di saturazione collettore-emettitore:
3.3 V
Tensione massima dell'emettitore di gate:
30 V
Corrente continua del collettore a 25 C:
113 A
Pd - Dissipazione di potenza:
625 W
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 150 C
Confezione:
Tubo
Corrente continua del collettore Ic Max:
113 A
Altezza:
5.31 mm
Lunghezza:
21.46 mm
Intervallo operativo di temperatura:
- 55 C to + 150 C
Larghezza:
16.26 mm
Marca:
Microchip / Microsemi
Corrente continua del collettore:
113 A
Corrente di dispersione gate-emettitore:
100 nA
Tipologia di prodotto:
Transistor IGBT
Quantità confezione di fabbrica:
1
sottocategoria:
IGBT
Nome depositato:
POWER MOS 7 IGBT
Tags
APT45GP, APT45G, APT45, APT4, APT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 1200V 113A 625000mW 3-Pin(3+Tab) T-MAX Tube
***rochip
IGBT PT MOS 7 Combi 1200 V 45 A TO-247 MAX
*** Stop Electro
Insulated Gate Bipolar Transistor, 113A I(C), 1200V V(BR)CES, N-Channel
***ure Electronics
APT75GP120B2G Single 1200 V 100 A 1042 W 320 nC POWER MOS 7® IGBT - TO-247-3
***rochip
IGBT PT MOS 7 Single 1200 V 75 A TO-247 MAX
***et
Trans IGBT Chip N-CH 1.2KV 100A 3-Pin(3+Tab) T-MAX
*** Stop Electro
Insulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel
***DA Technology Co., Ltd.
Product Description Demo for Development.
***ical
Trans IGBT Chip N-CH 1200V 100A 750000mW 3-Pin(3+Tab) TO-247AD
***ure Electronics
GenX3™ XPT™ IGBT 1200 V 100 A Flange Mount High-Speed IGBT - TO-247AD
***ark
Igbt, Single, N-Ch, 1.2Kv, 100A, To247Ad; Dc Collector Current:100A; Collector Emitter Saturation Voltage Vce(On):3.1V; Power Dissipation Pd:750W; Collector Emitter Voltage V(Br)Ceo:1.2Kv; Transistor Case Style:to-247Ad; No. Of Rohs Compliant: Yes
***ical
Trans IGBT Chip N-CH 1200V 88A 500000mW 3-Pin(3+Tab) T-MAX Tube
***ure Electronics
APT40GR120Bx Series 1200 V 88 A Flange Mount Ultra Fast NPT IGBT® - TO-247-3
***rochip
IGBT MOS 8 1200 V 40 A TO-247 MAX
*** Stop Electro
Insulated Gate Bipolar Transistor, 88A I(C), 1200V V(BR)CES, N-Channel
***ure Electronics
IXYH50N120C3D1 Series 1200 V 105 A Flange Mount Siode GENX3 IGBT - TO-247AD
***ca Corp
Insulated Gate Bipolar Transistor, 105A I(C), 1200V V(BR)CES, N-Channel, TO-247AD
***el Electronic
Trans IGBT Chip N-CH 1.2KV 90A 3-Pin(3+Tab) TO-247AD
***ical
Trans IGBT Chip N-CH 1200V 69A 417000mW 3-Pin(3+Tab) TO-247 Tube
***rochip
IGBT PT MOS 7 Combi 1200 V 25 A TO-247
*** Stop Electro
Insulated Gate Bipolar Transistor, 69A I(C), 1200V V(BR)CES, N-Channel, TO-247
***DA Technology Co., Ltd.
Product Description Demo for Development.
***ical
Trans IGBT Chip N-CH 1200V 90A 400000mW 3-Pin(3+Tab) TO-247AC Tube
***SIT Distribution GmbH
Insulated Gate Bipolar Transistor, 90A I(C), 1200V V(BR)CES, N-Channel
*** Electronic Components
IGBT Transistors 1200V UltraFast Discrete IGBT
***or
IGBT, 90A I(C), 1200V V(BR)CES,
***el Electronic
CAP CER 15PF 50V 5% NP0 RADIAL
Parte # Mfg. Descrizione Azione Prezzo
APT45GP120B2DQ2G
DISTI # V99:2348_09096420		Microsemi CorporationTrans IGBT Chip N-CH 1.2KV 113A 3-Pin(3+Tab) T-MAX
RoHS: Compliant		27
  • 500:$13.9800
  • 250:$14.5100
  • 100:$15.3700
  • 50:$16.9700
  • 25:$17.4899
  • 10:$19.0300
  • 5:$19.6400
  • 1:$20.5500
APT45GP120B2DQ2G
DISTI # V36:1790_09096420		Microsemi CorporationTrans IGBT Chip N-CH 1.2KV 113A 3-Pin(3+Tab) T-MAX
RoHS: Compliant		0
    APT45GP120B2DQ2G
    DISTI # APT45GP120B2DQ2G-ND    		Microsemi CorporationIGBT 1200V 113A 625W TMAX
    RoHS: Compliant
    Min Qty: 1
    Container: Tube    		56In Stock
    • 500:$15.2528
    • 100:$17.4633
    • 25:$18.7896
    • 10:$20.4480
    • 1:$22.1100
    APT45GP120B2DQ2G
    DISTI # 26978492    		Microsemi CorporationTrans IGBT Chip N-CH 1.2KV 113A 3-Pin(3+Tab) T-MAX
    RoHS: Compliant    		27
    • 500:$15.0285
    • 250:$15.5983
    • 100:$16.5227
    • 50:$18.2428
    • 25:$18.8016
    • 10:$20.4572
    • 5:$21.1130
    • 1:$22.0912
    APT45GP120B2DQ2G
    DISTI # APT45GP120B2DQ2G    		Microchip Technology IncPower MOS 7 IGBT N-Channel 1200V 113A 3-Pin TO-247 - Rail/Tube (Alt: APT45GP120B2DQ2G)
    RoHS: Compliant
    Min Qty: 120
    Container: Tube    		Americas - 0
    • 1200:$12.9900
    • 600:$13.1900
    • 360:$13.6900
    • 240:$14.0900
    • 120:$14.5900
    APT45GP120B2DQ2G
    DISTI # 494-APT45GP120B2DQ2G    		Microchip Technology IncIGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS 7 - Combi
    RoHS: Compliant    		3
    • 1:$20.6300
    • 5:$19.7100
    • 10:$19.0900
    • 25:$17.5400
    • 50:$17.0100
    • 100:$16.2100
    • 250:$14.8900
    • 500:$13.7200
    APT45GP120B2DQ2G
    DISTI # APT45GP120B2DQX    		Microsemi CorporationPOWER IGBT TRANSISTOR
    RoHS: Compliant    		0
    • 30:$13.8000
    • 100:$13.4500
    • 500:$13.2900
    Immagine Parte # Descrizione
    APT45GP120BG

    Mfr.#: APT45GP120BG

    OMO.#: OMO-APT45GP120BG

    		 IGBT Transistors FG, IGBT, 1200V, 45A, TO-247, RoHS
    APT45GP120B2DQ2G

    Mfr.#: APT45GP120B2DQ2G

    OMO.#: OMO-APT45GP120B2DQ2G

    		 IGBT Transistors FG, IGBT-COMBI, 1200V, TO-247 T-MAX, RoHS
    APT45GP120J

    Mfr.#: APT45GP120J

    OMO.#: OMO-APT45GP120J

    		 IGBT Transistors FG, IGBT, 1200V, 45A, SOT-227
    APT45GP120JDQ2

    Mfr.#: APT45GP120JDQ2

    OMO.#: OMO-APT45GP120JDQ2

    		 IGBT Transistors FG, IGBT-COMBI, 1200V, 45A, SOT-227
    APT45GP120J

    Mfr.#: APT45GP120J

    OMO.#: OMO-APT45GP120J-MICROSEMI

    		 IGBT Transistors
    APT45GP120BG

    Mfr.#: APT45GP120BG

    OMO.#: OMO-APT45GP120BG-MICROSEMI

    		 IGBT Transistors
    APT45GP120B2DQ2G

    Mfr.#: APT45GP120B2DQ2G

    OMO.#: OMO-APT45GP120B2DQ2G-MICROSEMI

    		 IGBT Transistors
    APT45GP120JDF2

    Mfr.#: APT45GP120JDF2

    OMO.#: OMO-APT45GP120JDF2-1190

    		 Nuovo e originale
    APT45GP120JDQ2

    Mfr.#: APT45GP120JDQ2

    OMO.#: OMO-APT45GP120JDQ2-MICROSEMI

    		 Trans IGBT Chip N-CH 1.2KV 75A 4-Pin SOT-227
    Disponibilità
    Azione:
    33
    Su ordine:
    2016
    Inserisci la quantità:
    Il prezzo attuale di APT45GP120B2DQ2G è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
    Prezzo di riferimento (USD)
    Quantità
    Prezzo unitario
    est. Prezzo
    1
    20,63 USD
    20,63 USD
    5
    19,71 USD
    98,55 USD
    10
    19,09 USD
    190,90 USD
    25
    17,54 USD
    438,50 USD
    50
    17,01 USD
    850,50 USD
    100
    16,21 USD
    1 621,00 USD
    250
    14,89 USD
    3 722,50 USD
    500
    13,72 USD
    6 860,00 USD
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