SQ2389ES-T1_GE3

Mfr. #:: SQ2389ES-T1_GE3
Produttore:: Vishay / Siliconix
Descrizione:: MOSFET -40V Vds +/-20V Vgs AEC-Q101 Qualified
Ciclo vitale:: Nuovo da questo produttore.
Scheda dati:: SQ2389ES-T1_GE3 Scheda dati
Consegna:: DHL FedEx Ups TNT EMS
Pagamento:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: SQ2389ES-T1_GE3 Datasheet SQ2389ES-T1_GE3 Datasheet (P4-P6)SQ2389ES-T1_GE3 Datasheet (P7-P9)SQ2389ES-T1_GE3 Datasheet (P10-P11)
ECAD Model:
Maggiori informazioni:: SQ2389ES-T1_GE3 maggiori informazioni

Attributo del prodotto
Valore attributo

Produttore:: Vishay

Categoria di prodotto:: MOSFET

RoHS:: Y

Tecnologia:: si

Stile di montaggio:: SMD/SMT

Pacchetto/custodia:: SOT-23-3

Numero di canali:: 1 Channel

Polarità del transistor:: Canale P

Vds - Tensione di rottura Drain-Source:: 40 V

Id - Corrente di scarico continua:: 4.1 A

Rds On - Resistenza Drain-Source:: 94 mOhms

Vgs th - Tensione di soglia gate-source:: 1.5 V

Vgs - Tensione Gate-Source:: 10 V

Qg - Carica cancello:: 8.2 nC

Temperatura di esercizio minima:: - 55 C

Temperatura massima di esercizio:: + 175 C

Pd - Dissipazione di potenza:: 3 W

Configurazione:: Separare

Modalità canale:: Aumento

Qualificazione:: AEC-Q101

Nome depositato:: TrenchFET

Confezione:: Bobina

Serie:: SQ

Tipo di transistor:: 1 P-Channel

Marca:: Vishay / Siliconix

Transconduttanza diretta - Min:: 5 S

Tempo di caduta:: 4 ns

Tipologia di prodotto:: MOSFET

Ora di alzarsi:: 12 ns

Quantità confezione di fabbrica:: 3000

sottocategoria:: MOSFET

Tempo di ritardo allo spegnimento tipico:: 16 ns

Tempo di ritardo di accensione tipico:: 7 ns

Unità di peso:: 0.000282 oz

Tags: SQ238, SQ23, SQ2

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SQ2389ES-T1_GE3 Descrizione

***ure Electronics: P-Channel 60 V 0.94 Ohm 12 nC SMT Automotive Power Mosfet - SOT-23

***ical: Trans MOSFET P-CH 40V 4.1A Automotive 3-Pin SOT-23 T/R

***ponent Sense: MOSFET -40V Vds +/-20V Vgs AEC-Q101 Qualified

***et: Trans MOSFET P-CH 40V 4.1A 3-Pin TO-236 T/R

***ronik: P-CH 40V MosFet AECQ SOT-23

***Components: AEQC101 Qualified P-CHANNEL 40-V (D-S) 1

***i-Key: MOSFET P-CHAN 40V SO23

***: P-CHANNEL 40-V (D-S)

***ark: Mosfet, Aec-Q101, N-Ch, 60V, 2.3A, Sot-23; Transistor Polarity:n Channel; Continuous Drain Current Id:2.3A; Drain Source Voltage Vds:60V; On Resistance Rds(On):0.125Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Rohs Compliant: Yes

***ment14 APAC: Prices include import duty and tax. MOSFET, AUTO, P-CH, 60V, 2.3A, SOT-23; Transistor Polarity:P Channel; Continuous Drain Current Id:4.1A; Drain Source Voltage Vds:40V; On Resistance Rds(on):94mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Pd:3.3W; Transistor Case Style:SOT-23; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:TrenchFET Series; Automotive Qualification Standard:AEC-Q101; MSL:MSL 3 - 168 hours; SVHC:No SVHC (17-Dec-2015)

***nell: MOSFET, AUTO, CA-P, 60V, 2,3A, SOT-23; Polarità Transistor:Canale P; Corrente Continua di Drain Id:4.1A; Tensione Drain Source Vds:40V; Resistenza di Attivazione Rds(on):94mohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:2V; Dissipazione di Potenza Pd:3.3W; Modello Case Transistor:SOT-23; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:TrenchFET Series; Standard di Qualifica Automotive:AEC-Q101; Livello di Sensibilità all'Umidità (MSL):MSL 3 - 168 ore; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (17-Dec-2015)

SQ2389ES-T1_GE3 Maggiori informazioni

SQ Automotive Power MOSFETs: Vishay / Siliconix SQ Automotive Power MOSFETs are AEC-Q101 qualified that are produced using a special process design that is optimized for use in the automotive industry. These SQ MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance. The SQ MOSFETs are available in a wide variety of packages for design flexibility. Packages include the TO-252, TO-262, TO-263, PowerPAK SO-8, D2PAK (TO-263), DPAK, and PowerPAK 1212-8W as well as several space-saving, small-outline options. A full range of polarity options is also available, including N-channel and P-Channel co-packages.

Market price

Parte #	Mfg.	Descrizione	Azione	Prezzo
SQ2389ES-T1-GE3 DISTI # V72:2272_14664715	Vishay Intertechnologies	P-CHANNEL 40-V (D-S) 175C MOSF	3	1:$0.4928
SQ2389ES-T1_GE3 DISTI # SQ2389ES-T1_GE3CT-ND	Vishay Siliconix	MOSFET P-CHAN 40V SO23 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	38155In Stock	1000:$0.2774 500:$0.3589 100:$0.4895 10:$0.6530 1:$0.7700
SQ2389ES-T1_GE3 DISTI # SQ2389ES-T1_GE3DKR-ND	Vishay Siliconix	MOSFET P-CHAN 40V SO23 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	38155In Stock	1000:$0.2774 500:$0.3589 100:$0.4895 10:$0.6530 1:$0.7700
SQ2389ES-T1_GE3 DISTI # SQ2389ES-T1_GE3TR-ND	Vishay Siliconix	MOSFET P-CHAN 40V SO23 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	36000In Stock	3000:$0.2455
SQ2389ES-T1_GE3 DISTI # C1S803604254956	Vishay Intertechnologies	MOSFETs	3	10:$0.4061
SQ2389ES-T1-GE3 DISTI # SQ2389ES-T1_GE3	Vishay Intertechnologies	Trans MOSFET P-CH 40V 4.1A 3-Pin TO-236 T/R (Alt: SQ2389ES-T1_GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 15000	3000:€0.4009 6000:€0.2739 12000:€0.2349 18000:€0.2169 30000:€0.2019
SQ2389ES-T1-GE3 DISTI # SQ2389ES-T1_GE3	Vishay Intertechnologies	Trans MOSFET P-CH 40V 4.1A 3-Pin TO-236 T/R (Alt: SQ2389ES-T1_GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Asia - 15000	3000:$0.2016 6000:$0.1551 9000:$0.1234 15000:$0.1043 30000:$0.0960 75000:$0.0930 150000:$0.0903
SQ2389ES-T1-GE3 DISTI # SQ2389ES-T1_GE3	Vishay Intertechnologies	Trans MOSFET P-CH 40V 4.1A 3-Pin TO-236 T/R - Tape and Reel (Alt: SQ2389ES-T1_GE3) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$0.2089 6000:$0.2029 12000:$0.1949 18000:$0.1889 30000:$0.1839
SQ2389ES-T1_GE3 DISTI # 96Y9640	Vishay Intertechnologies	MOSFET, AEC-Q101, N-CH, 60V, 2.3A, SOT-23,Transistor Polarity:N Channel,Continuous Drain Current Id:2.3A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.125ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V,Power , RoHS Compliant: Yes	41629	1:$0.6900 10:$0.5200 25:$0.4750 50:$0.4310 100:$0.3860 250:$0.3520 500:$0.3170 1000:$0.2450
SQ2389ES-T1_GE3 DISTI # 78-SQ2389ES-T1_GE3	Vishay Intertechnologies	MOSFET -40V Vds +/-20V Vgs AEC-Q101 Qualified RoHS: Compliant	62811	1:$0.6900 10:$0.5200 100:$0.3860 500:$0.3170 1000:$0.2450 3000:$0.2240 6000:$0.2090 9000:$0.1950 24000:$0.1880
SQ2389ES-T1_GE3	Vishay Intertechnologies	P-Channel 60 V 0.94 Ohm 12 nC SMT Automotive Power Mosfet - SOT-23 RoHS: Compliant	12000Reel	3000:$0.3200
SQ2389ES-T1_GE3 DISTI # TMOS1334	Vishay Intertechnologies	P-CH 40V MosFet AECQ SOT-23 RoHS: Compliant	Stock DE - 0Stock US - 0	3000:$0.2346
SQ2389ES-T1_GE3 DISTI # XSFP00000114848	Vishay Siliconix	RoHS: Compliant	18171	3000:$0.6400 18171:$0.5818
SQ2389ES-T1 GE3	Vishay Intertechnologies	P-CHANNEL 40-V (D-S) RoHS: Compliant	Americas - 69000	3000:$0.2520
SQ2389ES-T1-GE3	Vishay Intertechnologies	MOSFET P-CHANNEL 40-V (D-S) RoHS: Compliant	Americas - 69000	3000:$0.2520
SQ2389ES-T1_GE3 DISTI # 2617106	Vishay Intertechnologies	MOSFET, AUTO, P-CH, 60V, 2.3A, SOT-23 RoHS: Compliant	44960	5:£0.4570 25:£0.4250 100:£0.3010 250:£0.2740 500:£0.2460
SQ2389ES-T1_GE3 DISTI # 2617106	Vishay Intertechnologies	MOSFET, AUTO, P-CH, 60V, 2.3A, SOT-23 RoHS: Compliant	41629	1:$1.1000 10:$0.8240 100:$0.6120 500:$0.5020 1000:$0.3880 3000:$0.3550 6000:$0.3310 9000:$0.3090

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Disponibilità

Azione:: 69
Su ordine:: 2052
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Il prezzo attuale di SQ2389ES-T1_GE3 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]

Prezzo di riferimento (USD)

Quantità
Prezzo unitario
est. Prezzo

1: ~~0,68 USD~~; ~~0,68 USD~~

10: ~~0,52 USD~~; ~~5,19 USD~~

100: ~~0,38 USD~~; ~~38,50 USD~~

500: ~~0,32 USD~~; ~~158,00 USD~~

1000: ~~0,24 USD~~; ~~244,00 USD~~

A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.

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SQ2389ES-T1_GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes