SIHG17N60D-GE3

SIHG17N60D-GE3
Mfr. #:
SIHG17N60D-GE3
Produttore:
Vishay / Siliconix
Descrizione:
MOSFET 600V Vds 30V Vgs TO-247AC
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
SIHG17N60D-GE3 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIHG17N60D-GE3 DatasheetSIHG17N60D-GE3 Datasheet (P4-P6)SIHG17N60D-GE3 Datasheet (P7-P8)
ECAD Model:
Maggiori informazioni:
SIHG17N60D-GE3 maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
Vishay
Categoria di prodotto:
MOSFET
RoHS:
Y
Tecnologia:
si
Stile di montaggio:
Foro passante
Pacchetto/custodia:
TO-247AC-3
Numero di canali:
1 Channel
Polarità del transistor:
Canale N
Vds - Tensione di rottura Drain-Source:
600 V
Id - Corrente di scarico continua:
17 A
Rds On - Resistenza Drain-Source:
340 mOhms
Vgs th - Tensione di soglia gate-source:
5 V
Vgs - Tensione Gate-Source:
30 V
Qg - Carica cancello:
45 nC
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 150 C
Pd - Dissipazione di potenza:
277.8 W
Configurazione:
Separare
Confezione:
Massa
Serie:
D
Marca:
Vishay / Siliconix
Tipologia di prodotto:
MOSFET
Quantità confezione di fabbrica:
500
sottocategoria:
MOSFET
Parte # Alias:
SIHG17N60D-E3
Unità di peso:
1.340411 oz
Tags
SIHG17, SIHG1, SIHG, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 600V 17A 3-Pin(3+Tab) TO-247AC
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 17A I(D), 600V, 0.34ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
***nell
MOSFET, N-CH, 600V, 17A, TO-247AC; Transistor Polarity:N Channel; Continuous Drain Current Id:17A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.275ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:277.8W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-247AC; No. of Pins:3; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C
D-Series High Voltage Power MOSFETs
Vishay Siliconix's D-Series High Voltage Power MOSFETs are Vishay's next-generation high voltage N-Channel MOSFETs available in 400V, 500V and 600V ratings. These new devices combines low specific on-resistance with ultra-low gate charge, currents from 3.0A to 36A and are available in a wide range of packages. Features include Vishay's new high-voltage stripe technology, on-resistance down to 0.13Ω, gate charge down to 6nC, best-in-class gate charge times on-resistant figures of merit (FOM) down to 7.65 Ω-nC, and avalanche rated for reliable operation. Typical applications include high-power, high-performance switch mode applications, including server and telecom power systems, welding, plasma cutting, battery chargers, ballast light, high-intensity discharge (HID) lighting, semiconductor capital equipment, and induction heating.
Parte # Mfg. Descrizione Azione Prezzo
SIHG17N60D-GE3
DISTI # 27549478
Vishay IntertechnologiesTrans MOSFET N-CH 600V 17A 3-Pin(3+Tab) TO-247AC
RoHS: Compliant
85
  • 31:$2.5385
SIHG17N60D-GE3
DISTI # SIHG17N60D-GE3-ND
Vishay SiliconixMOSFET N-CH 600V 17A TO247AC
RoHS: Compliant
Min Qty: 500
Container: Tube
Temporarily Out of Stock
  • 500:$2.4665
SIHG17N60D-GE3
DISTI # SIHG17N60D-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 600V 17A 3-Pin TO-247AC (Alt: SIHG17N60D-GE3)
RoHS: Compliant
Min Qty: 1
Europe - 0
  • 1000:€1.3900
  • 50:€1.4900
  • 100:€1.4900
  • 500:€1.4900
  • 25:€1.6900
  • 10:€2.0900
  • 1:€2.5900
SIHG17N60D-GE3
DISTI # SIHG17N60D-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 600V 17A 3-Pin TO-247AC - Tape and Reel (Alt: SIHG17N60D-GE3)
RoHS: Not Compliant
Min Qty: 500
Container: Reel
Americas - 0
  • 3000:$1.7900
  • 5000:$1.7900
  • 1000:$1.8900
  • 2000:$1.8900
  • 500:$1.9900
SIHG17N60D-GE3
DISTI # 62W0514
Vishay IntertechnologiesPower MOSFET, N Channel, 17 A, 600 V, 0.275 ohm, 10 V, 3 V RoHS Compliant: Yes85
  • 1:$1.6500
  • 10:$1.6500
  • 25:$1.6500
  • 50:$1.6500
  • 100:$1.6500
  • 500:$1.6500
  • 1000:$1.6500
  • 2500:$1.6500
SIHG17N60D-GE3
DISTI # 78-SIHG17N60D-GE3
Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs TO-247AC
RoHS: Compliant
277
  • 1:$3.9700
  • 10:$3.2900
  • 100:$2.7100
  • 250:$2.6200
  • 500:$2.3500
  • 1000:$1.9900
  • 2500:$1.8900
SIHG17N60DGE3Vishay IntertechnologiesPower Field-Effect Transistor, 17A I(D), 600V, 0.34ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
RoHS: Compliant
500
    SIHG17N60D-GE3Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs TO-247AC
    RoHS: Compliant
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      Disponibilità
      Azione:
      277
      Su ordine:
      2260
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      Prezzo di riferimento (USD)
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      est. Prezzo
      1
      3,97 USD
      3,97 USD
      10
      3,29 USD
      32,90 USD
      100
      2,71 USD
      271,00 USD
      250
      2,62 USD
      655,00 USD
      500
      2,35 USD
      1 175,00 USD
      1000
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      1 990,00 USD
      2500
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      5000
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      9 100,00 USD
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