IRF6626TR1PBF

IRF6626TR1PBF
Mfr. #:
IRF6626TR1PBF
Produttore:
Infineon / IR
Descrizione:
MOSFET 30V N-CH 4.0 mOhm HEXFET 1.8V nC
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IRF6626TR1PBF Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRF6626TR1PBF DatasheetIRF6626TR1PBF Datasheet (P4-P6)IRF6626TR1PBF Datasheet (P7-P9)IRF6626TR1PBF Datasheet (P10)
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore:
Infineon
Categoria di prodotto:
MOSFET
RoHS:
Y
Tecnologia:
si
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
DirectFET-ST
Numero di canali:
1 Channel
Polarità del transistor:
Canale N
Vds - Tensione di rottura Drain-Source:
30 V
Id - Corrente di scarico continua:
16 A
Rds On - Resistenza Drain-Source:
7.1 mOhms
Vgs - Tensione Gate-Source:
20 V
Qg - Carica cancello:
19 nC
Pd - Dissipazione di potenza:
42 W
Configurazione:
Separare
Confezione:
Bobina
Altezza:
0.7 mm
Lunghezza:
4.85 mm
Tipo di transistor:
1 N-Channel
Larghezza:
3.95 mm
Marca:
Infineon / IR
Sensibile all'umidità:
Tipologia di prodotto:
MOSFET
Quantità confezione di fabbrica:
1000
sottocategoria:
MOSFET
Parte # Alias:
SP001530896
Tags
IRF6626T, IRF6626, IRF662, IRF66, IRF6, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 30V 16A 7-Pin Direct-FET ST T/R
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:13A; On Resistance, Rds(on):4mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:DirectFET ST ;RoHS Compliant: Yes
***ernational Rectifier
A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET ST package rated at 72 amperes optimized with low on resistance for applications such as active OR’ing. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.
***nell
MOSFET, N, DIRECTFET, 30V, ST; Transistor Type:Power MOSFET; Transistor Polarity:N; Voltage, Vds Typ:30V; Current, Id Cont:16A; Resistance, Rds On:4mohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:1.35V; Case Style:ST; Termination Type:SMD; Base Number:6626; Current, Idm Pulse:130A; Power Dissipation:2.2mW; SMD Marking:2.2; Voltage, Vds:30V; Voltage, Vgs th Max:2.35V; Voltage, Vgs th Min:1.35V
Parte # Mfg. Descrizione Azione Prezzo
IRF6626TR1PBF
DISTI # IRF6626TR1PBFTR-ND
Infineon Technologies AGMOSFET N-CH 30V 16A DIRECTFET
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)
Limited Supply - Call
    IRF6626TR1PBF
    DISTI # IRF6626TR1PBFCT-ND
    Infineon Technologies AGMOSFET N-CH 30V 16A DIRECTFET
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)
    Limited Supply - Call
      IRF6626TR1PBF
      DISTI # IRF6626TR1PBFDKR-ND
      Infineon Technologies AGMOSFET N-CH 30V 16A DIRECTFET
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®
      Limited Supply - Call
        IRF6626TR1PBF
        DISTI # 70018834
        Infineon Technologies AG30V SINGLE N-CHANNEL HEXFET POWER MOSFET,DIRECTFET ST PKG
        RoHS: Compliant
        0
        • 1000:$1.8500
        • 2000:$1.7000
        IRF6626TR1PBF
        DISTI # 942-IRF6626TR1PBF
        Infineon Technologies AGMOSFET 30V N-CH 4.0 mOhm HEXFET 1.8V nC
        RoHS: Compliant
        0
          IRF6626TR1
          DISTI # 942-IRF6626TR1
          Infineon Technologies AGMOSFET 30V N-CH 4.0 mOhm HEXFET 1.8V nC
          RoHS: Not compliant
          0
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            Disponibilità
            Azione:
            Available
            Su ordine:
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