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SISS06DN-T1-GE3

SISS06DN-T1-GE3
Mfr. #:
SISS06DN-T1-GE3
Produttore:
Vishay / Siliconix
Descrizione:
MOSFET 30V Vds; 20/-16V Vgs PowerPAK 1212-8S
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
SISS06DN-T1-GE3 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
SISS06DN-T1-GE3 maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
Vishay
Categoria di prodotto:
MOSFET
RoHS:
Y
Tecnologia:
si
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
PowerPAK1212-8
Numero di canali:
1 Channel
Polarità del transistor:
Canale N
Vds - Tensione di rottura Drain-Source:
30 V
Id - Corrente di scarico continua:
172.6 A
Rds On - Resistenza Drain-Source:
1.38 mOhms
Vgs th - Tensione di soglia gate-source:
1 V
Vgs - Tensione Gate-Source:
20 V, - 16 V
Qg - Carica cancello:
77 nC
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 150 C
Pd - Dissipazione di potenza:
65.7 W
Configurazione:
Separare
Modalità canale:
Aumento
Nome depositato:
TrenchFET, PowerPAK
Confezione:
Bobina
Serie:
SIS
Tipo di transistor:
1 N-Channel
Marca:
Vishay / Siliconix
Transconduttanza diretta - Min:
95 S
Tempo di caduta:
10 ns
Tipologia di prodotto:
MOSFET
Ora di alzarsi:
8 ns
Quantità confezione di fabbrica:
3000
sottocategoria:
MOSFET
Tempo di ritardo allo spegnimento tipico:
30 ns
Tempo di ritardo di accensione tipico:
13 ns
Tags
SISS0, SISS, SIS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
TrenchFET Gen IV MOSFETs
Vishay / Siliconix TrenchFET® Gen IV MOSFETs are next-generation TrenchFET® family of power MOSFETs. These new devices utilize a new high-density design and the SiR182DP, SiR186DP, and SiSS26DN. The TrenchFET Gen IV MOSFETs offer industry-low on-resistance and low total gate charge in the PowerPAK® SO-8 and 1212-8S packages. These TrenchFET Gen IV MOSFETs feature extremely low RDS(on) that translates to lower conduction losses for reduced power consumption. The TrenchFET MOSFETs also come with space-saving PowerPAK® 1212-8 packages with similar efficiency with a third of its size. Typical applications include high power DC/DC converters, synchronous rectification, solar micro-inverters, and motor drive switch.
Parte # Mfg. Descrizione Azione Prezzo
SISS06DN-T1-GE3
DISTI # V72:2272_22759348		Vishay IntertechnologiesN-Channel 30 V (D-S) MOSFET PowerPAK 1212-8S 1G SG 2 mil , 1.38 m @ 10Vm @ 7.5V 2.03 m @ 4.5V0
    SISS06DN-T1-GE3
    DISTI # SISS06DN-T1-GE3CT-ND    		Vishay SiliconixMOSFET N-CHAN 30 V POWERPAK 1212
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		50In Stock
    • 1000:$0.5353
    • 500:$0.6781
    • 100:$0.8209
    • 10:$1.0530
    • 1:$1.1800
    SISS06DN-T1-GE3
    DISTI # SISS06DN-T1-GE3DKR-ND    		Vishay SiliconixMOSFET N-CHAN 30 V POWERPAK 1212
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		50In Stock
    • 1000:$0.5353
    • 500:$0.6781
    • 100:$0.8209
    • 10:$1.0530
    • 1:$1.1800
    SISS06DN-T1-GE3
    DISTI # SISS06DN-T1-GE3TR-ND    		Vishay SiliconixMOSFET N-CHAN 30 V POWERPAK 1212
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape & Reel (TR)    		Temporarily Out of Stock
    • 15000:$0.4435
    • 6000:$0.4608
    • 3000:$0.4851
    SISS06DN-T1-GE3
    DISTI # SISS06DN-T1-GE3    		Vishay IntertechnologiesN-CHANNEL 30-V (D-S) MOSFET - Tape and Reel (Alt: SISS06DN-T1-GE3)
    RoHS: Compliant
    Min Qty: 6000
    Container: Reel    		Americas - 0
    • 60000:$0.4229
    • 30000:$0.4339
    • 18000:$0.4469
    • 12000:$0.4659
    • 6000:$0.4799
    SISS06DN-T1-GE3
    DISTI # 99AC9587    		Vishay IntertechnologiesMOSFET, N-CH, 30V, 172.6A, 150DEG C,Transistor Polarity:N Channel,Continuous Drain Current Id:172.6A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.00115ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.2V,Power RoHS Compliant: Yes50
    • 500:$0.6340
    • 250:$0.6860
    • 100:$0.7370
    • 50:$0.8120
    • 25:$0.8860
    • 10:$0.9610
    • 1:$1.1600
    SISS06DN-T1-GE3
    DISTI # 81AC3499    		Vishay IntertechnologiesN-CHANNEL 30-V (D-S) MOSFET0
    • 10000:$0.4200
    • 6000:$0.4290
    • 4000:$0.4460
    • 2000:$0.4950
    • 1000:$0.5450
    • 1:$0.5680
    SISS06DN-T1-GE3
    DISTI # 78-SISS06DN-T1-GE3    		Vishay IntertechnologiesMOSFET 30V Vds,20/-16V Vgs PowerPAK 1212-8S
    RoHS: Compliant    		40
    • 1:$1.1500
    • 10:$0.9510
    • 100:$0.7300
    • 500:$0.6280
    • 1000:$0.4950
    • 3000:$0.4620
    • 6000:$0.4390
    • 9000:$0.4230
    SISS06DN-T1-GE3
    DISTI # 3019137    		Vishay IntertechnologiesMOSFET, N-CH, 30V, 172.6A, 150DEG C
    RoHS: Compliant    		50
    • 5000:$0.7440
    • 1000:$0.7490
    • 500:$0.9250
    • 250:$1.0200
    • 100:$1.1200
    • 25:$1.4200
    • 5:$1.5600
    SISS06DN-T1-GE3
    DISTI # 3019137    		Vishay IntertechnologiesMOSFET, N-CH, 30V, 172.6A, 150DEG C50
    • 500:£0.4550
    • 250:£0.4920
    • 100:£0.5290
    • 10:£0.7430
    • 1:£0.9470
    Immagine Parte # Descrizione
    ADP3120AJRZ-RL

    Mfr.#: ADP3120AJRZ-RL

    OMO.#: OMO-ADP3120AJRZ-RL

    		 Gate Drivers 2 12V FET DRVR W/OUT DIS
    IX4340NE

    Mfr.#: IX4340NE

    OMO.#: OMO-IX4340NE

    		 Gate Drivers Dual 5A Gate Driver IC
    IX4340UE

    Mfr.#: IX4340UE

    OMO.#: OMO-IX4340UE

    		 Gate Drivers 5A Dual Low-Side MOSFET Driver
    IX4340NE

    Mfr.#: IX4340NE

    OMO.#: OMO-IX4340NE-IXYS-INTEGRATED-CIRCUITS-DIVIS

    		 5-AMP DUAL LOW-SIDE MOSFET DRIVE
    ADP3120AJRZ-RL

    Mfr.#: ADP3120AJRZ-RL

    OMO.#: OMO-ADP3120AJRZ-RL-ON-SEMICONDUCTOR

    		 IC MOSFET DRIVER DUAL 12V 8SOIC
    Disponibilità
    Azione:
    40
    Su ordine:
    2023
    Inserisci la quantità:
    Il prezzo attuale di SISS06DN-T1-GE3 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
    Prezzo di riferimento (USD)
    Quantità
    Prezzo unitario
    est. Prezzo
    1
    1,15 USD
    1,15 USD
    10
    0,95 USD
    9,51 USD
    100
    0,73 USD
    73,00 USD
    500
    0,63 USD
    314,00 USD
    1000
    0,50 USD
    495,00 USD
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