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IRFB3307PBF

IRFB3307PBF
Mfr. #:
IRFB3307PBF
Produttore:
Infineon / IR
Descrizione:
MOSFET MOSFT 75V 130A 6.3mOhm 120nC
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IRFB3307PBF Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRFB3307PBF DatasheetIRFB3307PBF Datasheet (P4-P6)IRFB3307PBF Datasheet (P7-P9)IRFB3307PBF Datasheet (P10-P12)
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore:
Infineon
Categoria di prodotto:
MOSFET
RoHS:
Y
Tecnologia:
si
Stile di montaggio:
Foro passante
Pacchetto/custodia:
TO-220-3
Numero di canali:
1 Channel
Polarità del transistor:
Canale N
Vds - Tensione di rottura Drain-Source:
75 V
Id - Corrente di scarico continua:
130 A
Rds On - Resistenza Drain-Source:
5 mOhms
Vgs - Tensione Gate-Source:
20 V
Qg - Carica cancello:
120 nC
Pd - Dissipazione di potenza:
250 W
Configurazione:
Separare
Confezione:
Tubo
Altezza:
15.65 mm
Lunghezza:
10 mm
Tipo di transistor:
1 N-Channel
Larghezza:
4.4 mm
Marca:
Infineon / IR
Tipologia di prodotto:
MOSFET
Quantità confezione di fabbrica:
1000
sottocategoria:
MOSFET
Parte # Alias:
SP001555972
Unità di peso:
0.211644 oz
Tags
IRFB3307P, IRFB3307, IRFB330, IRFB33, IRFB3, IRFB, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
In a Tube of 5, N-Channel MOSFET, 120 A, 75 V, 3-Pin TO-220AB Infineon IRFB3307PBF
***ied Electronics & Automation
MOSFET, Power;N-Ch;VDSS 75V;RDS(ON) 5 Milliohms;ID 130A;TO-220AB;PD 250W;gFS 98S
***ure Electronics
Single N-Channel 75 V 6.3 mOhm 180 nC HEXFET® Power Mosfet - TO-220-3
***ernational Rectifier
75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
***ical
Trans MOSFET N-CH 75V 120A 3-Pin(3+Tab) TO-220AB
*** Source Electronics
MOSFET N-CH 75V 130A TO-220AB
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature | Target Applications: AC-DC
***ark
MOSFET, N, 75V, TO-220; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:75V; Current, Id Cont:130A; Resistance, Rds On:5mohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:TO-220AB; ;RoHS Compliant: Yes
***nell
MOSFET, N, 75V, TO-220; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:75V; Current, Id Cont:130A; Resistance, Rds On:5mohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:TO-220AB; Termination Type:Through Hole; Current, Idm Pulse:510A; Lead Spacing:2.54mm; No. of Pins:3; Pin Format:1 g; 2 d/tab; 3 s; Power Dissipation:250W; Power, Pd:250W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Transistors, No. of:1; Voltage, Vds Max:75V
***ment14 APAC
MOSFET, N, 75V, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:130A; Drain Source Voltage Vds:75V; On Resistance Rds(on):5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:250W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:120A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Lead Spacing:2.54mm; No. of Transistors:1; Package / Case:TO-220AB; Pin Format:1 g; 2 d/tab; 3 s; Power Dissipation Pd:250W; Power Dissipation Pd:250W; Pulse Current Idm:510A; Termination Type:Through Hole; Voltage Vds Typ:75V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
Parte # Mfg. Descrizione Azione Prezzo
IRFB3307PBF
DISTI # V99:2348_13890254		Infineon Technologies AGTrans MOSFET N-CH 75V 120A 3-Pin(3+Tab) TO-220AB Tube124
  • 1000:$1.0042
  • 500:$1.1757
  • 100:$1.2910
  • 10:$1.5546
  • 1:$1.7572
IRFB3307PBF
DISTI # IRFB3307PBF-ND		Infineon Technologies AGMOSFET N-CH 75V 130A TO-220AB
RoHS: Compliant
Min Qty: 1
Container: Tube		3276In Stock
  • 1000:$1.1963
  • 500:$1.4438
  • 100:$1.8563
  • 50:$2.0626
  • 1:$2.5600
IRFB3307PBF
DISTI # 26198124		Infineon Technologies AGTrans MOSFET N-CH 75V 120A 3-Pin(3+Tab) TO-220AB Tube124
  • 100:$1.2910
  • 10:$1.5546
  • 8:$1.7572
IRFB3307PBF
DISTI # SP001555972		Infineon Technologies AGTrans MOSFET N-CH 75V 120A 3-Pin(3+Tab) TO-220AB (Alt: SP001555972)
RoHS: Compliant
Min Qty: 1		Europe - 400
  • 1:€1.1859
  • 10:€1.0779
  • 25:€0.9879
  • 50:€0.9479
  • 100:€0.9119
  • 500:€0.8779
  • 1000:€0.8469
IRFB3307PBF
DISTI # IRFB3307PBF		Infineon Technologies AGTrans MOSFET N-CH 75V 120A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IRFB3307PBF)
RoHS: Compliant
Min Qty: 450
Container: Tube		Americas - 0
  • 450:$0.8639
  • 550:$0.8329
  • 1000:$0.8029
  • 2250:$0.7759
  • 4500:$0.7619
IRFB3307PBF
DISTI # 32AC7460		Infineon Technologies AGMOSFET, N-CH, 120A, 75V, TO-220AB-3,Transistor Polarity:N Channel,Continuous Drain Current Id:120A,Drain Source Voltage Vds:75V,On Resistance Rds(on):0.005ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power RoHS Compliant: Yes221
  • 1:$2.2000
  • 10:$1.8700
  • 100:$1.5000
  • 500:$1.3100
  • 1000:$1.0800
IRFB3307PBF
DISTI # 70016924		Infineon Technologies AGMOSFET,Power,N-Ch,VDSS 75V,RDS(ON) 5 Milliohms,ID 130A,TO-220AB,PD 250W,gFS 98S
RoHS: Compliant		0
  • 400:$5.4400
IRFB3307PBF
DISTI # 942-IRFB3307PBF		Infineon Technologies AGMOSFET MOSFT 75V 130A 6.3mOhm 120nC
RoHS: Compliant		1711
  • 1:$2.2000
  • 10:$1.8700
  • 100:$1.5000
  • 500:$1.3100
  • 1000:$1.0800
IRFB3307PBF
DISTI # 8655800P		Infineon Technologies AGMOSFET N-CH 75V 120A HEXFET TO-220AB, TU10
  • 100:£1.1560
  • 250:£1.1040
  • 500:£0.9840
  • 1000:£0.8300
IRFB3307PBF
DISTI # IRFB3307PBF		Infineon Technologies AGTransistor: N-MOSFET,unipolar,75V,130A,250W,TO220AB74
  • 1:$1.9800
  • 3:$1.8000
  • 10:$1.4900
  • 100:$1.2800
IRFB3307PBF
DISTI # 2776857		Infineon Technologies AGMOSFET, N-CH, 120A, 75V, TO-220AB-3
RoHS: Compliant		221
  • 1:$2.7500
  • 10:$2.5700
  • 100:$2.2700
  • 250:$2.1500
  • 500:$2.0400
  • 1000:$1.9400
IRFB3307PBF
DISTI # C1S322000488401		Infineon Technologies AGMOSFETs
RoHS: Compliant		124
  • 100:$1.2910
  • 10:$1.5546
IRFB3307PBF
DISTI # 2776857		Infineon Technologies AGMOSFET, N-CH, 120A, 75V, TO-220AB-3
RoHS: Compliant		233
  • 1:£1.7300
  • 10:£1.3900
  • 100:£1.1500
  • 250:£1.1100
  • 500:£0.9940
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C0603C104K5RECAUTO

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 Cap Ceramic 0.1uF 50V X7R 10% Pad SMD 0603 125C Automotive T/R
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Disponibilità
Azione:
Available
Su ordine:
1985
Inserisci la quantità:
Il prezzo attuale di IRFB3307PBF è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
2,20 USD
2,20 USD
10
1,87 USD
18,70 USD
100
1,50 USD
150,00 USD
500
1,31 USD
655,00 USD
1000
1,08 USD
1 080,00 USD
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