STH185N10F3-2

STH185N10F3-2
Mfr. #:
STH185N10F3-2
Produttore:
STMicroelectronics
Descrizione:
IGBT Transistors MOSFET POWER MOSFET
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
STH185N10F3-2 Scheda dati
Consegna:
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Pagamento:
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ECAD Model:
Maggiori informazioni:
STH185N10F3-2 maggiori informazioni STH185N10F3-2 Product Details
Attributo del prodotto
Valore attributo
Produttore
STMicroelectronics
categoria di prodotto
Transistor - FET, MOSFET - Singoli
Serie
STRIPFET a canale N
Confezione
Bobina
Unità di peso
0.139332 oz
Stile di montaggio
SMD/SMT
Pacchetto-Custodia
TO-252-3
Tecnologia
si
Numero di canali
1 Channel
Configurazione
Separare
Pd-Power-Dissipazione
315 W
Massima temperatura di esercizio
+ 175 C
Temperatura di esercizio minima
- 55 C
Tempo di caduta
6.9 ns
Ora di alzarsi
97.1 ns
Vgs-Gate-Source-Voltage
20 V
Id-Continuo-Scarico-Corrente
180 A
Vds-Drain-Source-Breakdown-Voltage
100 V
Vgs-th-Gate-Sorgente-Soglia-Tensione
2 V
Rds-On-Drain-Source-Resistenza
4.5 mOhms
Polarità del transistor
Canale N
Tempo di ritardo allo spegnimento tipico
99.9 ns
Tempo di ritardo all'accensione tipico
25.6 ns
Qg-Gate-Carica
114.6 nC
Modalità canale
Aumento
Tags
STH18, STH1, STH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***icroelectronics
Automotive-grade N-channel 100 V, 3.9 mOhm typ., 180 A STripFET F3 Power MOSFET in H2PAK-2 package
***et
Trans MOSFET N-CH 100V 180A 3-Pin H2PAK-2 T/R
***icroelectronics SCT
Automotive Power Discrete, 100V, 180A, H2PAK-2, Tape and Reel
Standard Products
STMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discrete and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of design aids, including SPICE, IBIS models and simulation tools, are available to make adding to a design-in easy.
Parte # Mfg. Descrizione Azione Prezzo
STH185N10F3-2
DISTI # 497-15311-1-ND
STMicroelectronicsMOSFET N-CH 100V 180A H2PAK-2
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
167In Stock
  • 500:$3.3610
  • 100:$4.1506
  • 10:$5.0620
  • 1:$5.6700
STH185N10F3-2
DISTI # 497-15311-6-ND
STMicroelectronicsMOSFET N-CH 100V 180A H2PAK-2
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
167In Stock
  • 500:$3.3610
  • 100:$4.1506
  • 10:$5.0620
  • 1:$5.6700
STH185N10F3-2
DISTI # 497-15311-2-ND
STMicroelectronicsMOSFET N-CH 100V 180A H2PAK-2
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 1000:$2.7520
STH185N10F3-2
DISTI # STH185N10F3-2
STMicroelectronicsTrans MOSFET N-CH 100V 180A 3-Pin H2PAK-2 T/R (Alt: STH185N10F3-2)
RoHS: Compliant
Min Qty: 1000
Container: Tape and Reel
Europe - 1000
  • 1000:€2.0900
  • 2000:€2.0900
  • 4000:€2.0900
  • 6000:€2.0900
  • 10000:€2.0900
STH185N10F3-2
DISTI # STH185N10F3-2
STMicroelectronicsTrans MOSFET N-CH 100V 180A 3-Pin H2PAK-2 T/R - Tape and Reel (Alt: STH185N10F3-2)
RoHS: Compliant
Min Qty: 1000
Container: Reel
Americas - 0
  • 1000:$2.5900
  • 2000:$2.4900
  • 4000:$2.3900
  • 6000:$2.2900
  • 10000:$2.1900
STH185N10F3-2
DISTI # 511-STH185N10F3-2
STMicroelectronicsMOSFET Automotive-grade N-channel 100 V, 3.9 mOhm typ., 180 A STripFET F3 Power MOSFET in H2PAK-2 package
RoHS: Compliant
583
  • 1:$4.7400
  • 10:$4.0300
  • 100:$3.4900
  • 250:$3.3100
  • 500:$2.9700
  • 1000:$2.5100
STH185N10F3-2
DISTI # XSKDRABV0027585
STMicroelectronics 
RoHS: Compliant
720
  • 1000:$2.2800
Immagine Parte # Descrizione
STH185N10F3-6

Mfr.#: STH185N10F3-6

OMO.#: OMO-STH185N10F3-6

MOSFET Automotive-grade N-channel 100 V, 3.9 mOhm typ., 180 A STripFET F3 Power MOSFET in H2PAK-6 package
STH185N10F3-2

Mfr.#: STH185N10F3-2

OMO.#: OMO-STH185N10F3-2

MOSFET Automotive-grade N-channel 100 V, 3.9 mOhm typ., 180 A STripFET F3 Power MOSFET in H2PAK-2 package
STH185N10F3-2

Mfr.#: STH185N10F3-2

OMO.#: OMO-STH185N10F3-2-STMICROELECTRONICS

IGBT Transistors MOSFET POWER MOSFET
STH185N10F3-6

Mfr.#: STH185N10F3-6

OMO.#: OMO-STH185N10F3-6-STMICROELECTRONICS

MOSFET N-CH 100V 180A H2PAK-6
Disponibilità
Azione:
Available
Su ordine:
5500
Inserisci la quantità:
Il prezzo attuale di STH185N10F3-2 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
1,63 USD
1,63 USD
10
1,55 USD
15,48 USD
100
1,47 USD
146,64 USD
500
1,38 USD
692,50 USD
1000
1,30 USD
1 303,50 USD
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