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| Parte # | Mfg. | Descrizione | Azione | Prezzo |
|---|---|---|---|---|
| IPB04CN10N G DISTI # 726-IPB04CN10NG | Infineon Technologies AG | MOSFET N-Ch 100V 100A D2PAK-2 RoHS: Compliant | 0 |
| Immagine | Parte # | Descrizione |
|---|---|---|
|
Mfr.#: IPB044N15N5ATMA1 OMO.#: OMO-IPB044N15N5ATMA1 |
MOSFET |
|
Mfr.#: IPB042N10N3 G OMO.#: OMO-IPB042N10N3-G |
MOSFET N-Ch 100V 100A D2PAK-2 OptiMOS 3 |
|
Mfr.#: IPB042N03LG OMO.#: OMO-IPB042N03LG-1190 |
Nuovo e originale |
|
Mfr.#: IPB044N15N5ATMA1 |
MOSFET N-CH 150V 174A TO263-7 |
|
Mfr.#: IPB04N03LB |
MOSFET N-CH 30V 80A D2PAK |
|
|
Mfr.#: IPB042N10N3 OMO.#: OMO-IPB042N10N3-1190 |
Nuovo e originale |
|
|
Mfr.#: IPB049N06L3 OMO.#: OMO-IPB049N06L3-1190 |
Nuovo e originale |
|
|
Mfr.#: IPB049N06L3G OMO.#: OMO-IPB049N06L3G-1190 |
Power Field-Effect Transistor, 80A I(D), 60V, 0.0047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |
|
|
Mfr.#: IPB042N10N3GE818XT OMO.#: OMO-IPB042N10N3GE818XT-317 |
RF Bipolar Transistors MOSFET N-Ch 100V 100A D2PAK-2 |
|
|
Mfr.#: IPB049N08N5ATMA1 |
MOSFET N-CH 80V TO263-3 |