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IPB042N10N3GE818XT

IPB042N10N3GE818XT
Mfr. #:
IPB042N10N3GE818XT
Produttore:
Infineon Technologies
Descrizione:
RF Bipolar Transistors MOSFET N-Ch 100V 100A D2PAK-2
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IPB042N10N3GE818XT Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
IPB042N10N3GE818XT maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore
Tecnologie Infineon
categoria di prodotto
Transistor - FET, MOSFET - Singoli
Serie
IPB042N10
Confezione
Bobina
Alias ​​parziali
IPB042N10N3GE8187ATMA1 SP000939332
Unità di peso
0.139332 oz
Stile di montaggio
SMD/SMT
Pacchetto-Custodia
TO-252-3
Tecnologia
si
Numero di canali
1 Channel
Configurazione
Separare
Tipo a transistor
1 N-Channel
Pd-Power-Dissipazione
214 W
Massima temperatura di esercizio
+ 175 C
Temperatura di esercizio minima
- 55 C
Tempo di caduta
14 ns
Ora di alzarsi
59 ns
Vgs-Gate-Source-Voltage
20 V
Id-Continuo-Scarico-Corrente
100 A
Vds-Drain-Source-Breakdown-Voltage
100 V
Rds-On-Drain-Source-Resistenza
4.2 mOhms
Polarità del transistor
Canale N
Tempo di ritardo allo spegnimento tipico
48 ns
Qg-Gate-Carica
88 nC
Tags
IPB042N10N3GE, IPB042N10N3G, IPB042N10N3, IPB042N1, IPB042, IPB04, IPB0, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
MOSFET N-CH 100V 100A TO263-3
N-Channel OptiMOS™ Power MOSFETs - EXPANSION
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make Infineon N-Channel OptiMOS™ Power MOSFETs the best choice for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power Transistors provide excellent gate charge and are optimized for dc-dc conversion.OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in optimizing space, efficiency and cost. OptiMOS™ products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.Learn More
Parte # Mfg. Descrizione Azione Prezzo
IPB042N10N3GE818XT
DISTI # 726-IPB042N10N3GEMA1		Infineon Technologies AGMOSFET N-Ch 100V 100A D2PAK-2
RoHS: Compliant		0
  • 1:$2.7900
  • 10:$2.3700
  • 100:$1.8900
  • 500:$1.6600
  • 1000:$1.3700
  • 2000:$1.2800
  • 5000:$1.2300
Immagine Parte # Descrizione
IPB042N10N3GATMA1

Mfr.#: IPB042N10N3GATMA1

OMO.#: OMO-IPB042N10N3GATMA1

 MOSFET N-Ch 100V 100A D2PAK-2 OptiMOS 3
IPB042N10N3 G

Mfr.#: IPB042N10N3 G

OMO.#: OMO-IPB042N10N3-G

 MOSFET N-Ch 100V 100A D2PAK-2 OptiMOS 3
IPB042N10N3 G E8187

Mfr.#: IPB042N10N3 G E8187

OMO.#: OMO-IPB042N10N3-G-E8187

 MOSFET N-Ch 100V 100A D2PAK-2
IPB042N10N3GATMA1-CUT TAPE

Mfr.#: IPB042N10N3GATMA1-CUT TAPE

OMO.#: OMO-IPB042N10N3GATMA1-CUT-TAPE-1190

 Nuovo e originale
IPB042N10N

Mfr.#: IPB042N10N

OMO.#: OMO-IPB042N10N-1190

 Nuovo e originale
IPB042N10N3

Mfr.#: IPB042N10N3

OMO.#: OMO-IPB042N10N3-1190

 Nuovo e originale
IPB042N10N3 G

Mfr.#: IPB042N10N3 G

OMO.#: OMO-IPB042N10N3-G-1190

 Trans MOSFET N-CH 100V 100A 3-Pin(2+Tab) TO-263
IPB042N10N3G

Mfr.#: IPB042N10N3G

OMO.#: OMO-IPB042N10N3G-1190

 100V,100A,N Channel Power MOSFET
IPB042N10N3GATMA1INFINEO

Mfr.#: IPB042N10N3GATMA1INFINEO

OMO.#: OMO-IPB042N10N3GATMA1INFINEO-1190

 Nuovo e originale
IPB042N10N3GS

Mfr.#: IPB042N10N3GS

OMO.#: OMO-IPB042N10N3GS-1190

 Nuovo e originale
Disponibilità
Azione:
Available
Su ordine:
5500
Inserisci la quantità:
Il prezzo attuale di IPB042N10N3GE818XT è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
1,84 USD
1,84 USD
10
1,75 USD
17,53 USD
100
1,66 USD
166,05 USD
500
1,57 USD
784,15 USD
1000
1,48 USD
1 476,00 USD
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