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IRLU2905PBF

IRLU2905PBF
Mfr. #:
IRLU2905PBF
Produttore:
Infineon / IR
Descrizione:
MOSFET PLANAR_MOSFETS
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IRLU2905PBF Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRLU2905PBF DatasheetIRLU2905PBF Datasheet (P4-P6)IRLU2905PBF Datasheet (P7-P9)IRLU2905PBF Datasheet (P10-P11)
ECAD Model:
Maggiori informazioni:
IRLU2905PBF maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
Infineon
Categoria di prodotto:
MOSFET
RoHS:
Y
Tecnologia:
si
Stile di montaggio:
Foro passante
Pacchetto/custodia:
TO-251-3
Numero di canali:
1 Channel
Polarità del transistor:
Canale N
Vds - Tensione di rottura Drain-Source:
55 V
Id - Corrente di scarico continua:
36 A
Rds On - Resistenza Drain-Source:
40 mOhms
Vgs - Tensione Gate-Source:
16 V
Qg - Carica cancello:
32 nC
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 175 C
Pd - Dissipazione di potenza:
69 W
Configurazione:
Separare
Modalità canale:
Aumento
Confezione:
Tubo
Altezza:
6.22 mm
Lunghezza:
6.73 mm
Tipo di transistor:
1 N-Channel
Tipo:
MOSFET di potenza HEXFET
Larghezza:
2.38 mm
Marca:
Infineon / IR
Tempo di caduta:
15 ns
Tipologia di prodotto:
MOSFET
Ora di alzarsi:
84 ns
Quantità confezione di fabbrica:
3000
sottocategoria:
MOSFET
Tempo di ritardo allo spegnimento tipico:
26 ns
Tempo di ritardo di accensione tipico:
11 ns
Parte # Alias:
SP001577178
Tags
IRLU2905, IRLU29, IRLU2, IRLU, IRL
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.027Ohm;ID 42A;I-Pak (TO-251AA);PD 110W
***ure Electronics
Single N-Channel 55 V 27 mOhm 32 nC HEXFET® Power Mosfet - IPAK
***ineon SCT
55V Single N-Channel HEXFET Power MOSFET in a I-Pak package, IPAK-3, RoHS
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; Logic Level
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:55V; Continuous Drain Current Id:42A; On Resistance Rds(On):0.027Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; No. Of Pins:3Pinsrohs Compliant: Yes
***nell
MOSFET, N, 55V, 36A, I-PAK; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:55V; Current, Id Cont:42A; Resistance, Rds On:0.027ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:2V; Case Style:I-PAK; Termination Type:Through Hole; Alternate Case Style:I-PAK; Current, Idm Pulse:160A; Power Dissipation:110W; Power, Pd:110W; Resistance, Rds on @ Vgs = 10V:0.027ohm; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Thermal Resistance, Junction to Case A:1.8°C/W; Voltage, Vds:55V; Voltage, Vds Max:55V; Voltage, Vgs th Max:2V
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.022Ohm;ID 47A;TO-220AB;PD 110W;VGS +/-16V
***ineon SCT
55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
***ure Electronics
Single N-Channel 55 V 0.035 Ohm 48 nC HEXFET® Power Mosfet - TO-220-3
***Yang
Trans MOSFET N-CH 55V 47A 3-Pin(3+Tab) TO-220AB - Rail/Tube
***trelec
MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 110 W
***roFlash
Power Field-Effect Transistor, 47A I(D), 55V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; Logic Level
***ment14 APAC
MOSFET, N, 55V, 41A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:41A; Drain Source Voltage Vds:55V; On Resistance Rds(on):22mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:83W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:47A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:1.8°C/W; Lead Spacing:2.54mm; No. of Transistors:1; Package / Case:TO-220AB; Power Dissipation Pd:83W; Power Dissipation Pd:83W; Pulse Current Idm:160A; Termination Type:Through Hole; Voltage Vds Typ:55V; Voltage Vgs Max:16V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2V
***ineon SCT
Automotive Q101 55V Single N-Channel HEXFET Power MOSFET in a TO-220AB Package, TO220-3, RoHS
***Yang
Trans MOSFET N-CH 55V 51A 3-Pin(3+Tab) TO-220AB Tube - Rail/Tube
***(Formerly Allied Electronics)
MOSFET N-Channel 55V 51A HEXFET TO220AB
***ineon
Benefits: Advanced process technology; Ultra-low on-resistance; 175C operating temperature; Fast switching; Repetitive avalanche allowed up to Tjmax; Lead free, RoHS compliant; Automotive qualified
***nell
MOSFET,N CH,55V,51A,TO220AB; Continuous Drain Current Id:51A; Drain Source Voltage Vds:55V; On Resistance Rds(on):0.0111ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:80W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Power Dissipation Pd:80W; Voltage Vgs Max:20V
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.022Ohm;ID 30A;TO-220 Full-Pak;PD 45W;-55de
***ure Electronics
Single N-Channel 55 V 0.025 Ohm 48 nC HEXFET® Power Mosfet - TO-220-3FP
***ineon SCT
55V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package, FULLPAK220-3, RoHS
***et
Trans MOSFET N-CH 55V 30A 3-Pin(3+Tab) TO-220 Full-Pack
***trelec
MOSFET Operating temperature: -55...175 °C Housing type: TO-220 Polarity: N Power dissipation: 45 W
***icontronic
Power Field-Effect Transistor, 30A I(D), 55V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; Logic Level
***ment14 APAC
MOSFET, N, LOGIC, FULLPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:28A; Drain Source Voltage Vds:55V; On Resistance Rds(on):22mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:38W; Transistor Case Style:TO-220FP; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:30A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Isolation Voltage:2kV; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; No. of Transistors:1; Package / Case:TO-220FP; Power Dissipation Pd:38W; Power Dissipation Pd:38W; Pulse Current Idm:160A; Termination Type:Through Hole; Voltage Vds Typ:55V; Voltage Vgs Max:2V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2V
***emi
Power MOSFET, N-Channel, Logic Level, QFET®, 60 V, 52.4 A, 21 mΩ, TO-220
***Yang
Trans MOSFET N-CH 60V 52.4A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube
***ure Electronics
N-Channel 60 V 0.022 Ohm Flange Mount Mosfet - TO-220
*** Stop Electro
Power Field-Effect Transistor, 52.4A I(D), 60V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ment14 APAC
MOSFET, N; Transistor Polarity:N Channel; Continuous Drain Current Id:52.4A; Drain Source Voltage Vds:60V; On Resistance Rds(on):17mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:121W; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:52A; Junction Temperature Tj Max:175°C; Junction Temperature Tj Min:-55°C; Package / Case:TO-220; Power Dissipation Pd:121W; Termination Type:Through Hole; Voltage Vds Typ:60V; Voltage Vgs Max:2.5V; Voltage Vgs Rds on Measurement:10V
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
***ure Electronics
Single N-Channel 60 V 0.05 Ohms Flange Mount Power Mosfet - TO-220-3
***ical
Trans MOSFET N-CH 60V 30A 3-Pin(3+Tab) TO-220AB
***ment14 APAC
N CHANNEL MOSFET, 60V, 30A, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Current Id:30A; Transistor
***SIT Distribution GmbH
Power Field-Effect Transistor, 30A I(D), 60V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***nell
MOSFET, N, 60V, 30A, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 30A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.05ohm; Rds(on) Test Voltage Vgs: 5V; Threshold Voltage Vgs: 2V; Power Dissipation Pd: 88W; Transistor Case Style: TO-220AB; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; Current Id Max: 30A; Junction to Case Thermal Resistance A: 1.7°C/W; Operating Temperature Min: -55°C; Pulse Current Idm: 110A; Voltage Vds Typ: 60V; Voltage Vgs Max: 10V; Voltage Vgs Rds on Measurement: 5V; Voltage Vgs th Max: 2V
***emi
Power MOSFET, N-Channel, Logic Level, QFET®, 60 V, 32 A, 35 mΩ, TO-220
***ment14 APAC
N CHANNEL MOSFET, 60V, 32A, TO-220; Tran; Transistor Polarity:N Channel; Continuous Drain Current Id:32A;
***ical
Trans MOSFET N-CH 60V 32A 3-Pin (3+Tab) TO-220AB Rail
***ure Electronics
N-Channel 60 V 40 mOhm Flange Mount Mosfet - TO-220
***r Electronics
Power Field-Effect Transistor, 32A I(D), 60V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications..
IRLR/U2905 HEXFET® Power MOSFET
Infineon IRLR/U2905 HEXFET® Power MOSFET is a fifth generation HEXFET that uses advanced processing techniques. This achieves the lowest possible on-resistance per silicon area. Fast switching speed and ruggedized device design provides an extremely efficient device. The MOSFET is for use in a wide variety of applications.
Parte # Mfg. Descrizione Azione Prezzo
IRLU2905PBF
DISTI # 30214163		Infineon Technologies AGTrans MOSFET N-CH Si 55V 42A 3-Pin(3+Tab) IPAK Tube1540
  • 20:$0.4843
IRLU2905PBF
DISTI # IRLU2905PBF-ND		Infineon Technologies AGMOSFET N-CH 55V 42A I-PAK
RoHS: Compliant
Min Qty: 3000
Container: Tube		Temporarily Out of Stock
  • 3000:$0.7143
IRLU2905PBF
DISTI # C1S322000588455		Infineon Technologies AGTrans MOSFET N-CH Si 55V 42A 3-Pin(3+Tab) IPAK Tube
RoHS: Compliant		1550
  • 1000:$0.8030
  • 500:$0.8690
  • 100:$0.9680
  • 50:$1.1500
  • 25:$1.2900
  • 5:$1.7700
IRLU2905PBF
DISTI # IRLU2905PBF		Infineon Technologies AGTrans MOSFET N-CH 55V 42A 3-Pin(3+Tab) IPAK - Rail/Tube (Alt: IRLU2905PBF)
RoHS: Compliant
Min Qty: 1
Container: Tube		Americas - 0
  • 1:$0.5369
  • 10:$0.5299
  • 25:$0.5219
  • 50:$0.5149
  • 100:$0.4959
  • 500:$0.4789
  • 1000:$0.4709
IRLU2905PBF.
DISTI # 32AC0780		Infineon Technologies AGTransistor Polarity:N Channel,Continuous Drain Current Id:42A,Drain Source Voltage Vds:55V,On Resistance Rds(on):0.027ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V,Power Dissipation Pd:110W,No. of Pins:3Pins RoHS Compliant: Yes0
    IRLU2905PBF
    DISTI # 70017625    		Infineon Technologies AGMOSFET,Power,N-Ch,VDSS 55V,RDS(ON) 0.027Ohm,ID 42A,I-Pak (TO-251AA),PD 110W
    RoHS: Compliant    		0
    • 825:$0.6000
    IRLU2905PBFInternational RectifierPower Field-Effect Transistor, 20A I(D), 55V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
    RoHS: Compliant    		75
    • 1000:$0.6100
    • 500:$0.6400
    • 100:$0.6600
    • 25:$0.6900
    • 1:$0.7500
    IRLU2905PBF
    DISTI # 942-IRLU2905PBF    		Infineon Technologies AGMOSFET PLANAR_MOSFETS
    RoHS: Compliant    		958
    • 1:$1.5300
    • 10:$1.3000
    • 100:$0.9980
    • 500:$0.8820
    • 1000:$0.6960
    • 2500:$0.6170
    IRLU2905PBF
    DISTI # IRLU2905PBF    		Infineon Technologies AGTransistor: N-MOSFET,unipolar,55V,36A,69W,IPAK83
    • 1:$1.3860
    • 3:$1.2878
    • 10:$1.0422
    • 75:$0.9033
    IRLU2905PBF
    DISTI # 8651353    		Infineon Technologies AGMOSFET, N, 55V, 36A, I-PAK
    RoHS: Compliant    		0
    • 1:$2.2600
    • 10:$1.8600
    • 100:$1.5100
    • 250:$1.3500
    • 500:$1.2000
    • 1000:$1.1100
    Immagine Parte # Descrizione
    RD3L220SNTL1

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    		 MOSFET Nch 60V 22A TO-252(DPAK)
    IRFR2905ZTRPBF

    Mfr.#: IRFR2905ZTRPBF

    OMO.#: OMO-IRFR2905ZTRPBF

    		 MOSFET 55V 1 N-CH HEXFET 14.5mOhms 29nC
    IRF2805PBF

    Mfr.#: IRF2805PBF

    OMO.#: OMO-IRF2805PBF

    		 MOSFET MOSFT 55V 175A 4.7mOhm 150nC
    IRLR2705TRLPBF

    Mfr.#: IRLR2705TRLPBF

    OMO.#: OMO-IRLR2705TRLPBF

    		 MOSFET MOSFT 55V 24A 40mOhm 16.7nC LogLvl
    BTS70402EPAXUMA1

    Mfr.#: BTS70402EPAXUMA1

    OMO.#: OMO-BTS70402EPAXUMA1

    		 Power Switch ICs - Power Distribution PROFET
    BTS740S2XUMA1

    Mfr.#: BTS740S2XUMA1

    OMO.#: OMO-BTS740S2XUMA1

    		 Power Switch ICs - Power Distribution SMART HI SIDE PWR SWITCH 2 CHANNELS
    BTS500851TMBAKSA1

    Mfr.#: BTS500851TMBAKSA1

    OMO.#: OMO-BTS500851TMBAKSA1

    		 Power Switch ICs - Power Distribution SMART HI SIDE HI HI CURRNT PWR SWITCH
    ATMEGA328P-AU

    Mfr.#: ATMEGA328P-AU

    OMO.#: OMO-ATMEGA328P-AU

    		 8-bit Microcontrollers - MCU 32KB In-system Flash 20MHz 1.8V-5.5V
    L7805CD2T-TR

    Mfr.#: L7805CD2T-TR

    OMO.#: OMO-L7805CD2T-TR

    		 Linear Voltage Regulators 5.0V 1.0A Positive
    IRLR2705TRLPBF

    Mfr.#: IRLR2705TRLPBF

    OMO.#: OMO-IRLR2705TRLPBF-INFINEON-TECHNOLOGIES

    		 MOSFET N-CH 55V 28A DPAK
    Disponibilità
    Azione:
    Available
    Su ordine:
    1985
    Inserisci la quantità:
    Il prezzo attuale di IRLU2905PBF è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
    Prezzo di riferimento (USD)
    Quantità
    Prezzo unitario
    est. Prezzo
    1
    1,52 USD
    1,52 USD
    10
    1,29 USD
    12,90 USD
    100
    1,00 USD
    99,80 USD
    500
    0,88 USD
    441,00 USD
    1000
    0,70 USD
    696,00 USD
    3000
    0,62 USD
    1 851,00 USD
    9000
    0,59 USD
    5 346,00 USD
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