SI4431BDY-T1-GE3

SI4431BDY-T1-GE3
Mfr. #:
SI4431BDY-T1-GE3
Produttore:
Vishay / Siliconix
Descrizione:
MOSFET 30V 7.5A 2.5W 30mohm @ 10V
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
SI4431BDY-T1-GE3 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI4431BDY-T1-GE3 DatasheetSI4431BDY-T1-GE3 Datasheet (P4-P6)SI4431BDY-T1-GE3 Datasheet (P7-P9)
ECAD Model:
Maggiori informazioni:
SI4431BDY-T1-GE3 maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
Vishay
Categoria di prodotto:
MOSFET
RoHS:
E
Tecnologia:
si
Nome depositato:
TrenchFET
Confezione:
Bobina
Serie:
SI4
Marca:
Vishay / Siliconix
Tipologia di prodotto:
MOSFET
Quantità confezione di fabbrica:
2500
sottocategoria:
MOSFET
Parte # Alias:
SI4431BDY-GE3
Unità di peso:
0.006596 oz
Tags
SI4431BDY-T, SI4431BD, SI4431B, SI4431, SI443, SI44, SI4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***roFlash
Trans Mosfet P-ch 30V 5.7A 8-PIN SOIC N T/r
*** Source Electronics
MOSFET P-CH 30V 5.7A 8SOIC
***
P-CHANNEL 30-V (D-S) MOSFET
***ure Electronics
30V 0.03 Ohm P-ch SOIC-8
***i-Key
MOSFET P-CH 30V 5.7A 8SO
***ment14 APAC
P CH MOSFET; Transistor Polarity:P Chann; P CH MOSFET; Transistor Polarity:P Channel; Continuous Drain Current Id:-5.7A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):23mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-3V; Power Dissipation Pd:1.5W
Si4 MOSFETs
Vishay/Siliconix Si4 MOSFETs are TrenchFET® power MOSFETs used for amplifying electronic signals. These Si4 MOSFETs are available in N-channel, P-channel, and N- & P-channel. The Si4 MOSFETs offer different VGS, VDS, and temperature ranges. The Si4 MOSFETs operate in an enhancement mode and used for switching between electronic signals. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More
Parte # Mfg. Descrizione Azione Prezzo
SI4431BDY-T1-GE3
DISTI # SI4431BDY-T1-GE3-ND
Vishay SiliconixMOSFET P-CH 30V 5.7A 8SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 2500:$0.4928
SI4431BDY-T1-GE3
DISTI # SI4431BDY-T1-GE3
Vishay IntertechnologiesTrans MOSFET P-CH 30V 5.7A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4431BDY-T1-GE3)
RoHS: Not Compliant
Min Qty: 2500
Container: Reel
Americas - 0
  • 2500:$0.4249
  • 5000:$0.4119
  • 10000:$0.3949
  • 15000:$0.3839
  • 25000:$0.3739
SI4431BDY-T1-GE3
DISTI # 15R5014
Vishay IntertechnologiesP CH MOSFET,Transistor Polarity:P Channel,Continuous Drain Current Id:-5.7A,Drain Source Voltage Vds:-30V,On Resistance Rds(on):23mohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-3V,Power Dissipation Pd:1.5W , RoHS Compliant: Yes0
  • 1:$0.4390
  • 2500:$0.4360
  • 5000:$0.4230
  • 10000:$0.4070
SI4431BDY-T1-GE3
DISTI # 84R8048
Vishay IntertechnologiesP CHANNEL MOSFET,Transistor Polarity:P Channel,Continuous Drain Current Id:-5.7A,Drain Source Voltage Vds:-30V,On Resistance Rds(on):23mohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-3V,Power Dissipation Pd:1.5W , RoHS Compliant: Yes0
  • 1:$0.9200
  • 10:$0.7580
  • 25:$0.6990
  • 50:$0.6410
  • 100:$0.5820
  • 250:$0.5410
  • 500:$0.5000
SI4431BDY-T1-GE3
DISTI # 781-SI4431BDY-GE3
Vishay IntertechnologiesMOSFET 30V 7.5A 2.5W 30mohm @ 10V
RoHS: Compliant
1970
  • 1:$0.9200
  • 10:$0.7580
  • 100:$0.5820
  • 500:$0.5000
  • 1000:$0.3950
  • 2500:$0.3690
SI4431BDY-T1-GE3
DISTI # 1868999
Vishay IntertechnologiesP CH MOSFET
RoHS: Compliant
0
  • 2500:$1.8400
SI4431BDY-T1-GE3
DISTI # 1868999
Vishay IntertechnologiesP CH MOSFET
RoHS: Compliant
0
  • 2500:£0.8190
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Mfr.#: TS5A3159MDBVREP

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CSD18511KTT

Mfr.#: CSD18511KTT

OMO.#: OMO-CSD18511KTT

MOSFET 40V, N ch NexFET MOSFETG , single D2PAK, 2.6mOhm 3-DDPAK/TO-263 -55 to 175
INA219AIDR

Mfr.#: INA219AIDR

OMO.#: OMO-INA219AIDR-TEXAS-INSTRUMENTS

Current & Power Monitors & Regulators Zero-Drift,Bi-Dir Crnt/Pwr Monito
JA4575-BLD

Mfr.#: JA4575-BLD

OMO.#: OMO-JA4575-BLD--1

Coupled Inductors AEC-Q200 THT 10uH 10%
TPS60403DBVR

Mfr.#: TPS60403DBVR

OMO.#: OMO-TPS60403DBVR-TEXAS-INSTRUMENTS

Voltage Regulators - Switching Regulators 60mA Charge Pump Voltage Inverte
Disponibilità
Azione:
Available
Su ordine:
1985
Inserisci la quantità:
Il prezzo attuale di SI4431BDY-T1-GE3 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
1,11 USD
1,11 USD
10
0,92 USD
9,21 USD
100
0,71 USD
70,70 USD
500
0,61 USD
304,00 USD
1000
0,53 USD
532,00 USD
A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
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