MSC040SMA120S

MSC040SMA120S
Mfr. #:
MSC040SMA120S
Produttore:
Microchip / Microsemi
Descrizione:
MOSFET UNRLS, FG, SIC MOSFET, TO-268
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
MSC040SMA120S Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
MSC040SMA120S maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
Microchip
Categoria di prodotto:
MOSFET
RoHS:
Y
Tecnologia:
SiC
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
D3PAK-3
Polarità del transistor:
Canale N
Vds - Tensione di rottura Drain-Source:
1.2 kV
Rds On - Resistenza Drain-Source:
50 mOhms
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 175 C
Confezione:
Tubo
Marca:
Microchip / Microsemi
Tipologia di prodotto:
MOSFET
Quantità confezione di fabbrica:
1
sottocategoria:
MOSFET
Tags
MSC040S, MSC040, MSC04, MSC0, MSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***hardson RFPD
SILICON CARBIDE MOSFETS
***i-Key
MOSFET N-CH 1200V D3PAK
SiC Schottky Barrier Diodes
Microsemi / Microchip SiC Schottky Barrier Diodes (SBD) offer dynamic and thermal performance over conventional Silicon power diodes. SiC (Silicon Carbide) Barrier Diodes are comprised of Silicon (Si) and Carbon (C). Compared to Silicon-only devices, SiC devices offer a much greater dielectric breakdown field strength, higher bandgap, and higher thermal conductivity. SiC Schottky Diodes feature zero forward and reverse recovery charge, which reduces diode switching losses. These devices also offer temperature-independent switching, ensuring stable high-temperature performance.
Next Generation SiC MOSFETs
Microsemi / Microchip Next Generation Silicon Carbide (SiC) MOSFETs provide good dynamic and thermal performance compared to the Silicon (Si) power MOSFETs. These MOSFETs come with low capacitances, low gate charge, fast switching speed, and good avalanche ruggedness. The SiC MOSFETs are capable of stable operation at 175°C high junction temperature. These MOSFETs provide high-efficiency with low switching losses. The SiC MOSFETs does not require any freewheeling diodes and reduces the system cost. Typical applications include smart grid transmission and distribution, induction heating and welding, and power supply as well as distribution.
Parte # Mfg. Descrizione Azione Prezzo
MSC040SMA120S
DISTI # V36:1790_21671880
Microsemi CorporationMSC040SMA120S0
  • 30000:$21.8600
  • 15000:$21.8700
  • 3000:$24.3300
  • 300:$30.4300
  • 30:$31.5600
MSC040SMA120S
DISTI # MSC040SMA120S-ND
Microsemi CorporationMOSFET N-CH 1200V D3PAK
Min Qty: 1
Container: Tube
30In Stock
  • 250:$23.7084
  • 100:$24.8529
  • 25:$27.7960
  • 10:$29.1040
  • 1:$31.5600
MSC040SMA120S
DISTI # MSC040SMA120S
Microchip Technology IncTransistor MOSFET N-CH 1200V 65A 3-Pin D3PAK Tube - Rail/Tube (Alt: MSC040SMA120S)
RoHS: Compliant
Min Qty: 30
Container: Tube
Americas - 0
  • 300:$20.2900
  • 150:$20.5900
  • 90:$21.2900
  • 60:$21.9900
  • 30:$22.6900
MSC040SMA120S
DISTI # 494-MSC040SMA120S
Microchip Technology IncMOSFET UNRLS, FG, SIC MOSFET, TO-268
RoHS: Compliant
0
  • 1:$31.5600
  • 5:$31.3000
  • 10:$29.1000
  • 25:$26.9300
  • 50:$26.2500
  • 100:$24.5900
  • 250:$22.7300
MSC040SMA120S
DISTI # MSC040SMA120S
Microsemi CorporationSILICON CARBIDE MOSFETS
RoHS: Compliant
400
  • 1:$29.1500
  • 10:$27.6000
  • 25:$21.4400
  • 50:$20.9000
  • 100:$20.6400
Immagine Parte # Descrizione
MSC040SMA120B

Mfr.#: MSC040SMA120B

OMO.#: OMO-MSC040SMA120B

MOSFET UNRLS, FG, SIC MOSFET, TO-247
MSC040SMA120J

Mfr.#: MSC040SMA120J

OMO.#: OMO-MSC040SMA120J

MOSFET UNRLS, FG, SIC MOSFET, SOT-227
MSC040SMA120S

Mfr.#: MSC040SMA120S

OMO.#: OMO-MSC040SMA120S

MOSFET UNRLS, FG, SIC MOSFET, TO-268
MSC040SMA120S

Mfr.#: MSC040SMA120S

OMO.#: OMO-MSC040SMA120S-1190

Transistor MOSFET N-CH 1200V 65A 3-Pin D3PAK Tube (Alt: MSC040SMA120S)
MSC04020D2942BE100

Mfr.#: MSC04020D2942BE100

OMO.#: OMO-MSC04020D2942BE100-1190

Nuovo e originale
MSC040SMA120B

Mfr.#: MSC040SMA120B

OMO.#: OMO-MSC040SMA120B-1190

SILICON CARBIDE POWER TRANSISTORS/MODULES
Disponibilità
Azione:
Available
Su ordine:
3000
Inserisci la quantità:
Il prezzo attuale di MSC040SMA120S è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
32,37 USD
32,37 USD
5
31,11 USD
155,55 USD
10
29,95 USD
299,50 USD
25
27,52 USD
688,00 USD
50
26,51 USD
1 325,50 USD
100
25,58 USD
2 558,00 USD
250
23,47 USD
5 867,50 USD
500
22,34 USD
11 170,00 USD
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