MSC040SMA120B

MSC040SMA120B
Mfr. #:
MSC040SMA120B
Produttore:
Microchip / Microsemi
Descrizione:
SILICON CARBIDE POWER TRANSISTORS/MODULES
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
MSC040SMA120B Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
MSC040SMA120B maggiori informazioni
Attributo del prodotto
Valore attributo
Tags
MSC040S, MSC040, MSC04, MSC0, MSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH SiC 1.2KV 64A Tube
***hardson RFPD
SILICON CARBIDE MOSFETS
***i-Key
MOSFET N-CH 1200V TO247
SiC Schottky Barrier Diodes
Microsemi / Microchip SiC Schottky Barrier Diodes (SBD) offer dynamic and thermal performance over conventional Silicon power diodes. SiC (Silicon Carbide) Barrier Diodes are comprised of Silicon (Si) and Carbon (C). Compared to Silicon-only devices, SiC devices offer a much greater dielectric breakdown field strength, higher bandgap, and higher thermal conductivity. SiC Schottky Diodes feature zero forward and reverse recovery charge, which reduces diode switching losses. These devices also offer temperature-independent switching, ensuring stable high-temperature performance.
Next Generation SiC MOSFETs
Microsemi / Microchip Next Generation Silicon Carbide (SiC) MOSFETs provide good dynamic and thermal performance compared to the Silicon (Si) power MOSFETs. These MOSFETs come with low capacitances, low gate charge, fast switching speed, and good avalanche ruggedness. The SiC MOSFETs are capable of stable operation at 175°C high junction temperature. These MOSFETs provide high-efficiency with low switching losses. The SiC MOSFETs does not require any freewheeling diodes and reduces the system cost. Typical applications include smart grid transmission and distribution, induction heating and welding, and power supply as well as distribution.
Parte # Mfg. Descrizione Azione Prezzo
MSC040SMA120B
DISTI # V36:1790_21374926
Microsemi CorporationSILICON CARBIDE POWER TRANSISTORS/MODULES0
    MSC040SMA120B
    DISTI # MSC040SMA120B-ND
    Microsemi CorporationMOSFET N-CH 1200V TO247
    RoHS: Compliant
    Min Qty: 1
    Container: Tube
    On Order
    • 120:$24.5769
    • 30:$26.4437
    • 10:$28.7770
    • 1:$31.1100
    MSC040SMA120B
    DISTI # MSC040SMA120B
    Microchip Technology IncSilicon Carbide Power MOSFET N-Channel 1200V 67A 3-Pin TO-247 - Rail/Tube (Alt: MSC040SMA120B)
    RoHS: Compliant
    Min Qty: 90
    Container: Tube
    Americas - 0
    • 900:$19.2900
    • 450:$19.5900
    • 270:$20.1900
    • 180:$20.8900
    • 90:$21.5900
    MSC040SMA120B
    DISTI # 494-MSC040SMA120B
    Microchip Technology IncMOSFET
    RoHS: Compliant
    0
    • 1:$36.3400
    • 5:$35.3900
    • 10:$33.9800
    • 25:$32.7900
    • 50:$31.1100
    • 100:$29.2000
    • 250:$27.2800
    Immagine Parte # Descrizione
    MSC040SMA120B

    Mfr.#: MSC040SMA120B

    OMO.#: OMO-MSC040SMA120B

    MOSFET UNRLS, FG, SIC MOSFET, TO-247
    MSC040SMA120J

    Mfr.#: MSC040SMA120J

    OMO.#: OMO-MSC040SMA120J

    MOSFET UNRLS, FG, SIC MOSFET, SOT-227
    MSC040SMA120S

    Mfr.#: MSC040SMA120S

    OMO.#: OMO-MSC040SMA120S

    MOSFET UNRLS, FG, SIC MOSFET, TO-268
    MSC040SMA120S

    Mfr.#: MSC040SMA120S

    OMO.#: OMO-MSC040SMA120S-1190

    Transistor MOSFET N-CH 1200V 65A 3-Pin D3PAK Tube (Alt: MSC040SMA120S)
    MSC04020D2942BE100

    Mfr.#: MSC04020D2942BE100

    OMO.#: OMO-MSC04020D2942BE100-1190

    Nuovo e originale
    MSC040SMA120B

    Mfr.#: MSC040SMA120B

    OMO.#: OMO-MSC040SMA120B-1190

    SILICON CARBIDE POWER TRANSISTORS/MODULES
    Disponibilità
    Azione:
    Available
    Su ordine:
    3500
    Inserisci la quantità:
    Il prezzo attuale di MSC040SMA120B è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
    Prezzo di riferimento (USD)
    Quantità
    Prezzo unitario
    est. Prezzo
    1
    28,94 USD
    28,94 USD
    10
    27,49 USD
    274,88 USD
    100
    26,04 USD
    2 604,15 USD
    500
    24,59 USD
    12 297,40 USD
    1000
    23,15 USD
    23 148,00 USD
    A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
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