We guarantee 100% customer satisfaction.
Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.
we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.
Email: [email protected]
| Parte # | Mfg. | Descrizione | Azione | Prezzo |
|---|---|---|---|---|
| SIR892DP-T1-GE3 DISTI # V72:2272_09216062 | Vishay Intertechnologies | Trans MOSFET N-CH 25V 30A 8-Pin PowerPAK SO T/R RoHS: Compliant | 2892 |
|
| SIR892DP-T1-GE3 DISTI # SIR892DP-T1-GE3CT-ND | Vishay Siliconix | MOSFET N-CH 25V 50A PPAK SO-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | 22In Stock |
|
| SIR892DP-T1-GE3 DISTI # SIR892DP-T1-GE3TR-ND | Vishay Siliconix | MOSFET N-CH 25V 50A PPAK SO-8 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR) | Limited Supply - Call |
|
| SIR892DP-T1-GE3 DISTI # SIR892DP-T1-GE3DKR-ND | Vishay Siliconix | MOSFET N-CH 25V 50A PPAK SO-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | Limited Supply - Call | |
| SIR892DP-T1-GE3 DISTI # 25789952 | Vishay Intertechnologies | Trans MOSFET N-CH 25V 30A 8-Pin PowerPAK SO T/R RoHS: Compliant | 2892 |
|
| SIR892DP-T1-GE3 DISTI # 85W8935 | Vishay Intertechnologies | N CHANNEL MOSFET, 25V, 50A, SOIC,Transistor Polarity:N Channel,Continuous Drain Current Id:50A,Drain Source Voltage Vds:25V,On Resistance Rds(on):0.0025ohm,Rds(on) Test Voltage Vgs:20V,Threshold Voltage Vgs:2.6V RoHS Compliant: Yes | 90 |
|
| SIR892DP-T1-GE3 DISTI # 16P3665 | Vishay Intertechnologies | N CHANNEL MOSFET, 25V, 50A, SOIC, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:50A,Drain Source Voltage Vds:25V,On Resistance Rds(on):0.0025ohm,Rds(on) Test Voltage Vgs:20V,Threshold Voltage Vgs:2.6V RoHS Compliant: Yes | 0 |
|
| SIR892DP-T1-GE3 DISTI # 781-SIR892DP-T1-GE3 | Vishay Intertechnologies | MOSFET 25V Vds 20V Vgs PowerPAK SO-8 RoHS: Compliant | 49 |
|
| SIR892DP-T1-GE3 DISTI # 2478939 | Vishay Intertechnologies | N CHANNEL MOSFET, 25V, 50A, SOIC, FULL R RoHS: Compliant | 0 |
|
| SIR892DP-T1-GE3 | Vishay Intertechnologies | MOSFET 25V Vds 20V Vgs PowerPAK SO-8 RoHS: Compliant | Americas - | |
| SIR892DP-T1-GE3 DISTI # C1S803601788276 | Vishay Intertechnologies | MOSFETs RoHS: Compliant | 2892 |
|
| SIR892DP-T1-GE3 DISTI # 2478939 | Vishay Intertechnologies | N CHANNEL MOSFET, 25V, 50A, SOIC, FULL REEL RoHS: Compliant | 0 |
|
| Immagine | Parte # | Descrizione |
|---|---|---|
|
Mfr.#: SIR892DP-T1-GE3 OMO.#: OMO-SIR892DP-T1-GE3 |
MOSFET RECOMMENDED ALT 78-SIRC10DP-T1-GE3 |
|
Mfr.#: SIR892DP-T1-GE3 OMO.#: OMO-SIR892DP-T1-GE3-VISHAY |
IGBT Transistors MOSFET 25V 50A 50W 3.2mohm @ 10V |
|
Mfr.#: SIR892DP OMO.#: OMO-SIR892DP-1190 |
Nuovo e originale |
|
|
Mfr.#: SIR892DP-T1-E3 OMO.#: OMO-SIR892DP-T1-E3-1190 |
Nuovo e originale |
|
|
Mfr.#: SIR892DP-T1-GE3-S OMO.#: OMO-SIR892DP-T1-GE3-S-1190 |
Nuovo e originale |