OMO ElectronicOMO Electronic
Expand menu
Ciao, accediIl mio account
0 Carrello

SIR892DP-T1-GE3

SIR892DP-T1-GE3
Mfr. #:
SIR892DP-T1-GE3
Produttore:
Vishay / Siliconix
Descrizione:
MOSFET RECOMMENDED ALT 78-SIRC10DP-T1-GE3
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
SIR892DP-T1-GE3 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIR892DP-T1-GE3 DatasheetSIR892DP-T1-GE3 Datasheet (P4-P6)SIR892DP-T1-GE3 Datasheet (P7-P9)SIR892DP-T1-GE3 Datasheet (P10-P12)SIR892DP-T1-GE3 Datasheet (P13)
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore:
Vishay
Categoria di prodotto:
MOSFET
RoHS:
Y
Tecnologia:
si
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
PowerPAK-SO-8
Nome depositato:
TrenchFET, PowerPAK
Confezione:
Bobina
Altezza:
1.04 mm
Lunghezza:
6.15 mm
Serie:
SIGNORE
Larghezza:
5.15 mm
Marca:
Vishay / Siliconix
Tipologia di prodotto:
MOSFET
Quantità confezione di fabbrica:
3000
sottocategoria:
MOSFET
Parte # Alias:
SIR892DP-GE3
Unità di peso:
0.017870 oz
Tags
SIR892DP-T, SIR892D, SIR892, SIR89, SIR8, SIR
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 25 V 0.0032 Ohms Surface Mount Power Mosfet - SOIC-8
***ark
Transistor; Transistor Type:MOSFET; Continuous Drain Current, Id:50000mA; Drain Source Voltage, Vds:25V; On Resistance, Rds(on):0.0042ohm; Rds(on) Test Voltage, Vgs:20V; Threshold Voltage, Vgs Typ:2.6V; Power Dissipation, Pd:5W ;RoHS Compliant: Yes
***nell
MOSFET, N CH, 25V, 50A, POWERPAK SO; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:25V; On Resistance Rds(on):0.0025ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:50W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK SO; No. of Pins:8; MSL:-
Parte # Mfg. Descrizione Azione Prezzo
SIR892DP-T1-GE3
DISTI # V72:2272_09216062		Vishay IntertechnologiesTrans MOSFET N-CH 25V 30A 8-Pin PowerPAK SO T/R
RoHS: Compliant		2892
  • 1000:$1.4386
  • 500:$1.5428
  • 250:$1.5792
  • 100:$1.7233
  • 25:$1.9558
  • 10:$1.9794
  • 1:$2.2918
SIR892DP-T1-GE3
DISTI # SIR892DP-T1-GE3CT-ND		Vishay SiliconixMOSFET N-CH 25V 50A PPAK SO-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		22In Stock
  • 10:$2.8870
  • 1:$3.2000
SIR892DP-T1-GE3
DISTI # SIR892DP-T1-GE3TR-ND		Vishay SiliconixMOSFET N-CH 25V 50A PPAK SO-8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		Limited Supply - Call
  • 3000:$1.3514
SIR892DP-T1-GE3
DISTI # SIR892DP-T1-GE3DKR-ND		Vishay SiliconixMOSFET N-CH 25V 50A PPAK SO-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Limited Supply - Call
    SIR892DP-T1-GE3
    DISTI # 25789952    		Vishay IntertechnologiesTrans MOSFET N-CH 25V 30A 8-Pin PowerPAK SO T/R
    RoHS: Compliant    		2892
    • 1000:$1.4386
    • 500:$1.5428
    • 250:$1.5792
    • 100:$1.7233
    • 25:$1.9558
    • 10:$1.9794
    • 6:$2.2918
    SIR892DP-T1-GE3
    DISTI # 85W8935    		Vishay IntertechnologiesN CHANNEL MOSFET, 25V, 50A, SOIC,Transistor Polarity:N Channel,Continuous Drain Current Id:50A,Drain Source Voltage Vds:25V,On Resistance Rds(on):0.0025ohm,Rds(on) Test Voltage Vgs:20V,Threshold Voltage Vgs:2.6V RoHS Compliant: Yes90
    • 1:$3.4000
    • 25:$2.8200
    • 50:$2.5100
    • 100:$2.1800
    • 250:$2.0500
    • 500:$1.9200
    • 1000:$1.8200
    SIR892DP-T1-GE3
    DISTI # 16P3665    		Vishay IntertechnologiesN CHANNEL MOSFET, 25V, 50A, SOIC, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:50A,Drain Source Voltage Vds:25V,On Resistance Rds(on):0.0025ohm,Rds(on) Test Voltage Vgs:20V,Threshold Voltage Vgs:2.6V RoHS Compliant: Yes0
    • 1:$1.5200
    • 3000:$1.5200
    SIR892DP-T1-GE3
    DISTI # 781-SIR892DP-T1-GE3    		Vishay IntertechnologiesMOSFET 25V Vds 20V Vgs PowerPAK SO-8
    RoHS: Compliant    		49
    • 1:$2.8300
    • 10:$2.3500
    • 100:$1.8200
    • 500:$1.6000
    • 1000:$1.5200
    SIR892DP-T1-GE3
    DISTI # 2478939    		Vishay IntertechnologiesN CHANNEL MOSFET, 25V, 50A, SOIC, FULL R
    RoHS: Compliant    		0
    • 3000:£1.3500
    SIR892DP-T1-GE3Vishay IntertechnologiesMOSFET 25V Vds 20V Vgs PowerPAK SO-8
    RoHS: Compliant    		Americas -
      SIR892DP-T1-GE3
      DISTI # C1S803601788276      		Vishay IntertechnologiesMOSFETs
      RoHS: Compliant      		2892
      • 250:$1.5792
      • 100:$1.7233
      • 25:$1.9558
      • 10:$1.9794
      • 1:$2.2918
      SIR892DP-T1-GE3
      DISTI # 2478939      		Vishay IntertechnologiesN CHANNEL MOSFET, 25V, 50A, SOIC, FULL REEL
      RoHS: Compliant      		0
      • 3000:$2.1600
      Immagine Parte # Descrizione
      TQP3M9041

      Mfr.#: TQP3M9041

      OMO.#: OMO-TQP3M9041

      		 RF Amplifier 2.3-4.0GHz NF.77dB Gain 18 dB
      F2923NCGI

      Mfr.#: F2923NCGI

      OMO.#: OMO-F2923NCGI

      		 RF Switch ICs Constant Impedence SP2T RF 0.48dB 2GHz
      SP4060-08ATG

      Mfr.#: SP4060-08ATG

      OMO.#: OMO-SP4060-08ATG

      		 TVS Diodes / ESD Suppressors 8 Ch 30kV 2.5V 4.4pF
      TPSMA6L58A

      Mfr.#: TPSMA6L58A

      OMO.#: OMO-TPSMA6L58A

      		 TVS Diodes / ESD Suppressors 600W 58V AEC-Q101 5% Uni-Directional
      MMBTA92-TP

      Mfr.#: MMBTA92-TP

      OMO.#: OMO-MMBTA92-TP

      		 Bipolar Transistors - BJT 300mA 305V
      SI7192DP-T1-GE3

      Mfr.#: SI7192DP-T1-GE3

      OMO.#: OMO-SI7192DP-T1-GE3

      		 MOSFET 30V 60A 104W 1.9mohm @ 10V
      NLSV2T244DR2G

      Mfr.#: NLSV2T244DR2G

      OMO.#: OMO-NLSV2T244DR2G

      		 Translation - Voltage Levels 2 BIT UNIDIR TRANSLATOR
      LIS3DHTR

      Mfr.#: LIS3DHTR

      OMO.#: OMO-LIS3DHTR

      		 Accelerometers MEMS Ultra Low-Power 3-Axes "Nano"
      LMK325BJ107MM-T

      Mfr.#: LMK325BJ107MM-T

      OMO.#: OMO-LMK325BJ107MM-T

      		 Multilayer Ceramic Capacitors MLCC - SMD/SMT 1210 10VDC 100uF 20% X5R
      SI7192DP-T1-GE3

      Mfr.#: SI7192DP-T1-GE3

      OMO.#: OMO-SI7192DP-T1-GE3-VISHAY

      		 MOSFET N-CH 30V 60A PPAK SO-8
      Disponibilità
      Azione:
      Available
      Su ordine:
      5500
      Inserisci la quantità:
      Il prezzo attuale di SIR892DP-T1-GE3 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
      Iniziare con
      Prodotti più recenti
      More Newest Products
      Top