IPU95R450P7AKMA1

IPU95R450P7AKMA1
Mfr. #:
IPU95R450P7AKMA1
Produttore:
Infineon Technologies
Descrizione:
MOSFET 950 V CoolMOS P7
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IPU95R450P7AKMA1 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
IPU95R450P7AKMA1 maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
Infineon
Categoria di prodotto:
MOSFET
RoHS:
Y
Tecnologia:
si
Stile di montaggio:
Foro passante
Pacchetto/custodia:
IPAK-3
Numero di canali:
1 Channel
Polarità del transistor:
Canale N
Vds - Tensione di rottura Drain-Source:
950 V
Id - Corrente di scarico continua:
14 A
Rds On - Resistenza Drain-Source:
450 mOhms
Vgs th - Tensione di soglia gate-source:
2.5 V
Vgs - Tensione Gate-Source:
20 V
Qg - Carica cancello:
35 nC
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 150 C
Pd - Dissipazione di potenza:
104 W
Configurazione:
Separare
Modalità canale:
Aumento
Nome depositato:
CoolMOS
Confezione:
Tubo
Serie:
P7
Tipo di transistor:
1 N-Channel
Marca:
Tecnologie Infineon
Tempo di caduta:
5 ns
Tipologia di prodotto:
MOSFET
Ora di alzarsi:
7 ns
Quantità confezione di fabbrica:
1500
sottocategoria:
MOSFET
Tempo di ritardo allo spegnimento tipico:
45 ns
Tempo di ritardo di accensione tipico:
10 ns
Parte # Alias:
IPU95R450P7
Tags
IPU9, IPU
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
CoolMOS™ P7 MOSFETs
Infineon Technologies CoolMOS™ P7 MOSFETs deliver best-in-class price/performance ratio with excellent ease-of-use to address challenges in various applications. The 700V and 800V CoolMOS P7 power MOSFETs have been developed for flyback-based low-power SMPS applications including adapter and charger, lighting, audio SMPS, AUX and industrial power. The 600V CoolMOS P7 power MOSFETs target not only low power but also high-power SMPS applications like solar inverters, server, telecomand EV charging stations. The P7 MOSFETs are fully optimized for hard- and soft-switching topologies. 
950V CoolMOS™ P7 SJ MOSFETs
Infineon Technologies 950V CoolMOS™ P7 SJ MOSFETs employs 950V super junction technology and combines best-in-class performance with state of the art ease-of-use. These MOSFETs come with an integrated Zener diode Electro Static Discharge (ESD) protection. The integrated diode improves ESD robustness that reduces ESD-related yield loss and provides exceptional ease-of-use levels. These MOSFETs offer 3V VGS(th) and narrow tolerance of only ±0.5V that makes it easy to drive and design-in. The 950V SJ MOSFETs provide low DPAK RDS(on) that enables higher density while decreasing BOM and assembly cost.
Parte # Mfg. Descrizione Azione Prezzo
IPU95R450P7AKMA1
DISTI # V36:1790_22710500
Infineon Technologies AG950V Power Transistor0
  • 1500000:$0.9288
  • 750000:$0.9325
  • 150000:$1.3650
  • 15000:$2.1970
  • 1500:$2.3400
IPU95R450P7AKMA1
DISTI # V99:2348_22710500
Infineon Technologies AG950V Power Transistor0
  • 1500000:$0.9984
  • 750000:$1.0020
  • 150000:$1.4150
  • 15000:$2.2050
  • 1500:$2.3400
IPU95R450P7AKMA1
DISTI # IPU95R450P7AKMA1-ND
Infineon Technologies AGMOSFET N-CH 950V 14A TO251
RoHS: Compliant
Min Qty: 1
Container: Tube
457In Stock
  • 6000:$1.0883
  • 3000:$1.1302
  • 1500:$1.2139
  • 100:$1.7832
  • 25:$2.0928
  • 10:$2.2180
  • 1:$2.4700
IPU95R450P7AKMA1
DISTI # IPU95R450P7AKMA1
Infineon Technologies AGTrans MOSFET N-CH 950V 14A 3-Pin TO-251 Tube - Rail/Tube (Alt: IPU95R450P7AKMA1)
RoHS: Compliant
Min Qty: 1500
Container: Tube
Americas - 0
  • 15000:$1.0129
  • 9000:$1.0309
  • 6000:$1.0669
  • 3000:$1.1069
  • 1500:$1.1479
IPU95R450P7AKMA1
DISTI # SP001792326
Infineon Technologies AGTrans MOSFET N-CH 950V 14A 3-Pin TO-251 Tube (Alt: SP001792326)
RoHS: Compliant
Min Qty: 1
Container: Tube
Europe - 0
  • 1000:€0.9829
  • 500:€1.0009
  • 100:€1.0159
  • 50:€1.0339
  • 25:€1.1079
  • 10:€1.3329
  • 1:€1.7119
IPU95R450P7AKMA1
DISTI # 71AC0404
Infineon Technologies AGMOSFET, 950V, 14A, 150DEG C, 104W,Transistor Polarity:N Channel,Continuous Drain Current Id:14A,Drain Source Voltage Vds:950V,On Resistance Rds(on):0.38ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power RoHS Compliant: Yes471
  • 5000:$1.0400
  • 2500:$1.0800
  • 1000:$1.1600
  • 500:$1.4000
  • 100:$1.6100
  • 10:$2.0100
  • 1:$2.3600
IPU95R450P7AKMA1
DISTI # 726-IPU95R450P7AKMA1
Infineon Technologies AGMOSFET 950 V CoolMOS P7
RoHS: Compliant
0
  • 1:$2.3400
  • 10:$1.9900
  • 100:$1.5900
  • 500:$1.3900
  • 1000:$1.1500
  • 2500:$1.0700
  • 5000:$1.0300
IPU95R450P7AKMA1
DISTI # 2916138
Infineon Technologies AGMOSFET, 950V, 14A, 150DEG C, 104W
RoHS: Compliant
471
  • 1000:$1.6000
  • 500:$1.6300
  • 250:$1.7200
  • 100:$1.8200
  • 10:$2.0500
  • 1:$2.2100
IPU95R450P7AKMA1
DISTI # 2916138
Infineon Technologies AGMOSFET, 950V, 14A, 150DEG C, 104W471
  • 500:£1.0800
  • 250:£1.1600
  • 100:£1.2300
  • 10:£1.5500
  • 1:£2.0500
Immagine Parte # Descrizione
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Mfr.#: NCV7342MW3R2G

OMO.#: OMO-NCV7342MW3R2G

CAN Interface IC NCV7342MW3R2G
FCU360N65S3R0

Mfr.#: FCU360N65S3R0

OMO.#: OMO-FCU360N65S3R0

MOSFET SUPERFET3 650V 10A 360 mOhm
IPU95R1K2P7AKMA1

Mfr.#: IPU95R1K2P7AKMA1

OMO.#: OMO-IPU95R1K2P7AKMA1

MOSFET 950 V CoolMOS P7
FDMC86183

Mfr.#: FDMC86183

OMO.#: OMO-FDMC86183

MOSFET PTNG 100/20V Nch Trench Mosfet
MRF101AN

Mfr.#: MRF101AN

OMO.#: OMO-MRF101AN

RF MOSFET Transistors Wideband RF Power LDMOS Transistor, 100 W CW over 1.8-250 MHz, 50 V
MRFX600HR5

Mfr.#: MRFX600HR5

OMO.#: OMO-MRFX600HR5

RF MOSFET Transistors Wideband RF Power LDMOS Transistor, 600 W CW over 1.8-400 MHz, 65 V
STPSC20H12GY-TR

Mfr.#: STPSC20H12GY-TR

OMO.#: OMO-STPSC20H12GY-TR

Schottky Diodes & Rectifiers Automotive grade 1200V Power Schottky Silicon Carbide Diode
IXFN170N25X3

Mfr.#: IXFN170N25X3

OMO.#: OMO-IXFN170N25X3

MOSFET 250V/170A Ultra Junc tion X3-Class MOSFET
C1210C223KDRACAUTO

Mfr.#: C1210C223KDRACAUTO

OMO.#: OMO-C1210C223KDRACAUTO

Multilayer Ceramic Capacitors MLCC - SMD/SMT 1kV .022pF X7R 10% Flex Term AEC-Q200
MRFX600HR5

Mfr.#: MRFX600HR5

OMO.#: OMO-MRFX600HR5-NXP-SEMICONDUCTORS

TRANS LDMOS 600W 400 MHZ 65V
Disponibilità
Azione:
Available
Su ordine:
1984
Inserisci la quantità:
Il prezzo attuale di IPU95R450P7AKMA1 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
2,34 USD
2,34 USD
10
1,99 USD
19,90 USD
100
1,59 USD
159,00 USD
500
1,39 USD
695,00 USD
1000
1,15 USD
1 150,00 USD
2500
1,07 USD
2 675,00 USD
5000
1,03 USD
5 150,00 USD
10000
1,00 USD
9 970,00 USD
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