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IPU95R1K2P7AKMA1

IPU95R1K2P7AKMA1
Mfr. #:
IPU95R1K2P7AKMA1
Produttore:
Infineon Technologies
Descrizione:
MOSFET 950 V CoolMOS P7
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IPU95R1K2P7AKMA1 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
IPU95R1K2P7AKMA1 maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
Infineon
Categoria di prodotto:
MOSFET
RoHS:
Y
Tecnologia:
si
Stile di montaggio:
Foro passante
Pacchetto/custodia:
IPAK-3
Numero di canali:
1 Channel
Polarità del transistor:
Canale N
Vds - Tensione di rottura Drain-Source:
950 V
Id - Corrente di scarico continua:
6 A
Rds On - Resistenza Drain-Source:
1.2 Ohms
Vgs th - Tensione di soglia gate-source:
2.5 V
Vgs - Tensione Gate-Source:
20 V
Qg - Carica cancello:
15 nC
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 150 C
Pd - Dissipazione di potenza:
52 W
Configurazione:
Separare
Modalità canale:
Aumento
Nome depositato:
CoolMOS
Confezione:
Tubo
Serie:
P7
Tipo di transistor:
1 N-Channel
Marca:
Tecnologie Infineon
Tempo di caduta:
12 ns
Tipologia di prodotto:
MOSFET
Ora di alzarsi:
10 ns
Quantità confezione di fabbrica:
1500
sottocategoria:
MOSFET
Tempo di ritardo allo spegnimento tipico:
36 ns
Tempo di ritardo di accensione tipico:
7 ns
Parte # Alias:
IPU95R1K2P7
Tags
IPU9, IPU
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
CoolMOS™ P7 MOSFETs
Infineon Technologies CoolMOS™ P7 MOSFETs deliver best-in-class price/performance ratio with excellent ease-of-use to address challenges in various applications. The 700V and 800V CoolMOS P7 power MOSFETs have been developed for flyback-based low-power SMPS applications including adapter and charger, lighting, audio SMPS, AUX and industrial power. The 600V CoolMOS P7 power MOSFETs target not only low power but also high-power SMPS applications like solar inverters, server, telecomand EV charging stations. The P7 MOSFETs are fully optimized for hard- and soft-switching topologies. 
950V CoolMOS™ P7 SJ MOSFETs
Infineon Technologies 950V CoolMOS™ P7 SJ MOSFETs employs 950V super junction technology and combines best-in-class performance with state of the art ease-of-use. These MOSFETs come with an integrated Zener diode Electro Static Discharge (ESD) protection. The integrated diode improves ESD robustness that reduces ESD-related yield loss and provides exceptional ease-of-use levels. These MOSFETs offer 3V VGS(th) and narrow tolerance of only ±0.5V that makes it easy to drive and design-in. The 950V SJ MOSFETs provide low DPAK RDS(on) that enables higher density while decreasing BOM and assembly cost.
Parte # Mfg. Descrizione Azione Prezzo
IPU95R1K2P7AKMA1
DISTI # V99:2348_22609668		Infineon Technologies AGLOW POWER_NEW1500
  • 3000:$0.6021
  • 1500:$0.6392
  • 100:$0.9358
  • 25:$1.0900
  • 10:$1.2111
  • 1:$1.5582
IPU95R1K2P7AKMA1
DISTI # IPU95R1K2P7AKMA1-ND		Infineon Technologies AGMOSFET N-CH 950V 6A TO251
RoHS: Compliant
Min Qty: 1
Container: Tube		1876In Stock
  • 6000:$0.6104
  • 3000:$0.6425
  • 1500:$0.6884
  • 100:$1.0556
  • 25:$1.2852
  • 10:$1.3540
  • 1:$1.5100
IPU95R1K2P7AKMA1
DISTI # 32342534		Infineon Technologies AGLOW POWER_NEW1500
  • 11:$1.5582
IPU95R1K2P7AKMA1
DISTI # 33259027		Infineon Technologies AGLOW POWER_NEW1482
  • 19:$0.5474
IPU95R1K2P7AKMA1
DISTI # SP001792322		Infineon Technologies AGTrans MOSFET N-CH 950V 6A 3-Pin TO-251 Tube (Alt: SP001792322)
RoHS: Compliant
Min Qty: 1
Container: Tube		Europe - 3000
  • 1000:€0.5509
  • 500:€0.5609
  • 100:€0.5769
  • 50:€0.5879
  • 25:€0.6749
  • 10:€0.8089
  • 1:€0.9639
IPU95R1K2P7AKMA1
DISTI # IPU95R1K2P7AKMA1		Infineon Technologies AGTrans MOSFET N-CH 950V 6A 3-Pin TO-251 Tube - Rail/Tube (Alt: IPU95R1K2P7AKMA1)
RoHS: Compliant
Min Qty: 1500
Container: Tube		Americas - 0
  • 15000:$0.5549
  • 9000:$0.5649
  • 6000:$0.5849
  • 3000:$0.6069
  • 1500:$0.6289
IPU95R1K2P7AKMA1
DISTI # 71AC0401		Infineon Technologies AGMOSFET, 950V, 6A, 150DEG C, 52W,Transistor Polarity:N Channel,Continuous Drain Current Id:6A,Drain Source Voltage Vds:950V,On Resistance Rds(on):1.03ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power Dissipation RoHS Compliant: Yes495
  • 10000:$0.5660
  • 2500:$0.5880
  • 1000:$0.6630
  • 500:$0.8390
  • 100:$0.9490
  • 10:$1.2300
  • 1:$1.4400
IPU95R1K2P7AKMA1
DISTI # 726-IPU95R1K2P7AKMA1		Infineon Technologies AGMOSFET 950 V CoolMOS P7
RoHS: Compliant		472
  • 1:$1.4300
  • 10:$1.2200
  • 100:$0.9400
  • 500:$0.8310
  • 1000:$0.6560
  • 2500:$0.5820
  • 10000:$0.5600
IPU95R1K2P7AKMA1
DISTI # IPU95R1K2P7		Infineon Technologies AGTransistor: N-MOSFET,unipolar,950V,3.7A,52W,IPAK1500
  • 75:$0.7700
  • 25:$0.8400
  • 5:$0.9600
  • 1:$1.0700
IPU95R1K2P7AKMA1
DISTI # XSKDRABV0048016		Infineon Technologies AGSmallSignalBipolarTransistor,0.1AI(C),65VV(BR)CEO,1-Element,NPN,Silicon
RoHS: Compliant		4500 in Stock0 on Order
  • 4500:$0.7667
  • 1500:$0.8214
IPU95R1K2P7AKMA1
DISTI # 2916135		Infineon Technologies AGMOSFET, 950V, 6A, 150DEG C, 52W495
  • 500:£0.6020
  • 250:£0.6420
  • 100:£0.6810
  • 10:£0.9380
  • 1:£1.1800
IPU95R1K2P7AKMA1
DISTI # 2916135		Infineon Technologies AGMOSFET, 950V, 6A, 150DEG C, 52W
RoHS: Compliant		495
  • 5000:$0.8920
  • 1000:$0.9380
  • 500:$0.9920
  • 250:$1.1500
  • 100:$1.3700
  • 25:$1.6700
  • 5:$1.9300
Immagine Parte # Descrizione
IPD95R1K2P7ATMA1

Mfr.#: IPD95R1K2P7ATMA1

OMO.#: OMO-IPD95R1K2P7ATMA1

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IPD95R750P7ATMA1

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IPU95R3K7P7AKMA1

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IPD70R900P7SAUMA1

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IPA60R120P7XKSA1

Mfr.#: IPA60R120P7XKSA1

OMO.#: OMO-IPA60R120P7XKSA1

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ICE5QSAGXUMA1

Mfr.#: ICE5QSAGXUMA1

OMO.#: OMO-ICE5QSAGXUMA1

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IPU95R750P7AKMA1

Mfr.#: IPU95R750P7AKMA1

OMO.#: OMO-IPU95R750P7AKMA1

 MOSFET 950 V CoolMOS P7
ICE5QSAGXUMA1

Mfr.#: ICE5QSAGXUMA1

OMO.#: OMO-ICE5QSAGXUMA1-INFINEON-TECHNOLOGIES

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IPA60R120P7XKSA1

Mfr.#: IPA60R120P7XKSA1

OMO.#: OMO-IPA60R120P7XKSA1-INFINEON-TECHNOLOGIES

 MOSFET N-CHANNEL 600V 26A TO220
Disponibilità
Azione:
472
Su ordine:
2455
Inserisci la quantità:
Il prezzo attuale di IPU95R1K2P7AKMA1 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
1,43 USD
1,43 USD
10
1,22 USD
12,20 USD
100
0,94 USD
94,00 USD
500
0,83 USD
415,50 USD
1000
0,66 USD
656,00 USD
2500
0,58 USD
1 455,00 USD
10000
0,56 USD
5 600,00 USD
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