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SISF00DN-T1-GE3

SISF00DN-T1-GE3
Mfr. #:
SISF00DN-T1-GE3
Produttore:
Vishay / Siliconix
Descrizione:
MOSFET 30V (S1-S2) Cmn Drn PowerPAK 1212-8SCD
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
SISF00DN-T1-GE3 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SISF00DN-T1-GE3 DatasheetSISF00DN-T1-GE3 Datasheet (P4-P6)SISF00DN-T1-GE3 Datasheet (P7)
ECAD Model:
Maggiori informazioni:
SISF00DN-T1-GE3 maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
Vishay
Categoria di prodotto:
MOSFET
RoHS:
Y
Tecnologia:
si
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
PowerPAK-1212-8SCD-8
Numero di canali:
2 Channel
Polarità del transistor:
Canale N
Vds - Tensione di rottura Drain-Source:
30 V
Id - Corrente di scarico continua:
60 A
Rds On - Resistenza Drain-Source:
4.2 mOhms
Vgs th - Tensione di soglia gate-source:
2.1 V
Vgs - Tensione Gate-Source:
- 16 V, 20 V
Qg - Carica cancello:
53 nC
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 150 C
Pd - Dissipazione di potenza:
69.4 W
Configurazione:
Dual
Modalità canale:
Aumento
Nome depositato:
TrenchFET, PowerPAK
Confezione:
Bobina
Serie:
SIS
Tipo di transistor:
2 N-Channel
Marca:
Vishay / Siliconix
Transconduttanza diretta - Min:
130 S
Tempo di caduta:
10 ns
Tipologia di prodotto:
MOSFET
Ora di alzarsi:
32 ns
Quantità confezione di fabbrica:
3000
sottocategoria:
MOSFET
Tempo di ritardo allo spegnimento tipico:
22 ns
Tempo di ritardo di accensione tipico:
10 ns
Tags
SISF, SIS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Integrated MOSFETs with Common Drain
Vishay Integrated MOSFETs with Common Drain are 1, 2 and 3-channels offering surface mounting. The Integrated MOSFETs feature N-channel, and N+P-channel options, as well as a breakdown voltage range of 20V to 200V. The Enhancement Mode MOSFETs have 6 or 8-pins, a power dissipation range of 1.5W to 69.4W, and on drain-source resistance of 2.15mΩ to 26mΩ.
Integrated MOSFET Solutions
Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance. 
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
TrenchFET Gen IV MOSFETs
Vishay / Siliconix TrenchFET® Gen IV MOSFETs are next-generation TrenchFET® family of power MOSFETs. These new devices utilize a new high-density design and the SiR182DP, SiR186DP, and SiSS26DN. The TrenchFET Gen IV MOSFETs offer industry-low on-resistance and low total gate charge in the PowerPAK® SO-8 and 1212-8S packages. These TrenchFET Gen IV MOSFETs feature extremely low RDS(on) that translates to lower conduction losses for reduced power consumption. The TrenchFET MOSFETs also come with space-saving PowerPAK® 1212-8 packages with similar efficiency with a third of its size. Typical applications include high power DC/DC converters, synchronous rectification, solar micro-inverters, and motor drive switch.
Parte # Mfg. Descrizione Azione Prezzo
SISF00DN-T1-GE3
DISTI # SISF00DN-T1-GE3TR-ND		Vishay SiliconixMOSFET DUAL N-CH 30V POWERPAK 12
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		On Order
  • 6000:$0.5954
  • 3000:$0.6252
SISF00DN-T1-GE3
DISTI # SISF00DN-T1-GE3CT-ND		Vishay SiliconixMOSFET DUAL N-CH 30V POWERPAK 12
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Temporarily Out of Stock
  • 1000:$0.6899
  • 500:$0.8739
  • 100:$1.0579
  • 10:$1.3570
  • 1:$1.5200
SISF00DN-T1-GE3
DISTI # SISF00DN-T1-GE3DKR-ND		Vishay SiliconixMOSFET DUAL N-CH 30V POWERPAK 12
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Temporarily Out of Stock
  • 1000:$0.6899
  • 500:$0.8739
  • 100:$1.0579
  • 10:$1.3570
  • 1:$1.5200
SISF00DN-T1-GE3
DISTI # SISF00DN-T1-GE3		Vishay IntertechnologiesTrans MOSFET Array Dual N-CH 30V 60A 8-Pin PowerPAK 1212-8SCD - Tape and Reel (Alt: SISF00DN-T1-GE3)
RoHS: Compliant
Min Qty: 6000
Container: Reel		Americas - 0
  • 60000:$0.5449
  • 30000:$0.5599
  • 18000:$0.5759
  • 12000:$0.5999
  • 6000:$0.6189
SISF00DN-T1-GE3
DISTI # 81AC2794		Vishay IntertechnologiesMOSFET, DUAL N-CH, 30V, POWERPAK 1212,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:60A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0042ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.1V,RoHS Compliant: Yes0
  • 500:$0.8170
  • 250:$0.8830
  • 100:$0.9490
  • 50:$1.0400
  • 25:$1.1400
  • 10:$1.2300
  • 1:$1.4900
SISF00DN-T1-GE3
DISTI # 81AC3490		Vishay IntertechnologiesCOMMON-DRAIN DUAL N-CH 30V(S1-S2)MOS0
  • 10000:$0.5410
  • 6000:$0.5530
  • 4000:$0.5750
  • 2000:$0.6380
  • 1000:$0.7020
  • 1:$0.7320
SISF00DN-T1-GE3
DISTI # 78-SISF00DN-T1-GE3		Vishay IntertechnologiesMOSFET 30V (S1-S2) Cmn Drn PowerPAK 1212-8SCD
RoHS: Compliant		0
  • 1:$1.4800
  • 10:$1.2200
  • 100:$0.9400
  • 500:$0.8090
  • 1000:$0.6380
  • 3000:$0.5960
SISF00DN-T1-GE3
DISTI # 2932982		Vishay IntertechnologiesMOSFET, DUAL N-CH, 30V, POWERPAK 12120
  • 500:£0.5930
  • 250:£0.6410
  • 100:£0.6890
  • 25:£0.9010
  • 5:£0.9980
SISF00DN-T1-GE3
DISTI # 2932982		Vishay IntertechnologiesMOSFET, DUAL N-CH, 30V, POWERPAK 1212
RoHS: Compliant		0
  • 1000:$1.0100
  • 500:$1.0600
  • 250:$1.2500
  • 100:$1.5200
  • 10:$1.9300
  • 1:$2.3400
Immagine Parte # Descrizione
SISF00DN-T1-GE3

Mfr.#: SISF00DN-T1-GE3

OMO.#: OMO-SISF00DN-T1-GE3

 MOSFET 30V (S1-S2) Cmn Drn PowerPAK 1212-8SCD
SISF00DN-T1-GE3

Mfr.#: SISF00DN-T1-GE3

OMO.#: OMO-SISF00DN-T1-GE3-VISHAY

 MOSFET DUAL N-CH 30V POWERPAK 12
Disponibilità
Azione:
Available
Su ordine:
2000
Inserisci la quantità:
Il prezzo attuale di SISF00DN-T1-GE3 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
1,48 USD
1,48 USD
10
1,22 USD
12,20 USD
100
0,94 USD
94,00 USD
500
0,81 USD
404,50 USD
1000
0,64 USD
638,00 USD
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