RQ3E120ATTB

RQ3E120ATTB
Mfr. #:
RQ3E120ATTB
Produttore:
ROHM Semiconductor
Descrizione:
MOSFET PCH -30V -12A MIDDLE POWER
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
RQ3E120ATTB Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore:
Semiconduttore ROHM
Categoria di prodotto:
MOSFET
RoHS:
Y
Tecnologia:
si
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
HSMT-8
Numero di canali:
1 Channel
Polarità del transistor:
Canale P
Vds - Tensione di rottura Drain-Source:
39 V
Id - Corrente di scarico continua:
12 A
Rds On - Resistenza Drain-Source:
61 mOhms
Vgs th - Tensione di soglia gate-source:
2.5 V
Vgs - Tensione Gate-Source:
20 V
Qg - Carica cancello:
62 nC
Pd - Dissipazione di potenza:
2 W
Configurazione:
Separare
Confezione:
Bobina
Altezza:
0.85 mm
Lunghezza:
3 mm
Tipo di transistor:
1 P-Channel
Larghezza:
2.4 mm
Marca:
Semiconduttore ROHM
Tempo di caduta:
95 ns
Tipologia di prodotto:
MOSFET
Ora di alzarsi:
30 ns
Quantità confezione di fabbrica:
3000
sottocategoria:
MOSFET
Tempo di ritardo allo spegnimento tipico:
140 ns
Tempo di ritardo di accensione tipico:
20 ns
Parte # Alias:
RQ3E120AT
Tags
RQ3E120AT, RQ3E120A, RQ3E12, RQ3E1, RQ3E, RQ3
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
RQ3E120AT Series -30 V -39 A 8 mOhm Surface Mount Power Mosfet - HSMT-8
***el Electronic
Transistors - FETs, MOSFETs - Single 1 (Unlimited) 8-PowerVDFN Surface Mount MOSFET (Metal Oxide) P-Channel Cut Tape (CT) 8m Ω @ 12A, 10V 12A Ta 150°C TJ MOSFET P-CH 30V 12A HSMT8
***nell
MOSFET, P-CH, -30V, -39A, HSMT; Transistor Polarity: P Channel; Continuous Drain Current Id: -39A; Drain Source Voltage Vds: -30V; On Resistance Rds(on): 0.0061ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -2.5V; Power Dissipation Pd: 20W; Transistor Case Style: HSMT; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018)
Parte # Mfg. Descrizione Azione Prezzo
RQ3E120ATTB
DISTI # RQ3E120ATTBCT-ND
ROHM SemiconductorMOSFET P-CH 30V 12A HSMT8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
7411In Stock
  • 1000:$0.2416
  • 500:$0.3127
  • 100:$0.3980
  • 10:$0.5330
  • 1:$0.6200
RQ3E120ATTB
DISTI # RQ3E120ATTBDKR-ND
ROHM SemiconductorMOSFET P-CH 30V 12A HSMT8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
7411In Stock
  • 1000:$0.2416
  • 500:$0.3127
  • 100:$0.3980
  • 10:$0.5330
  • 1:$0.6200
RQ3E120ATTB
DISTI # RQ3E120ATTBTR-ND
ROHM SemiconductorMOSFET P-CH 30V 12A HSMT8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
6000In Stock
  • 30000:$0.1835
  • 15000:$0.1863
  • 6000:$0.2001
  • 3000:$0.2139
RQ3E120ATTB
DISTI # RQ3E120ATTB
ROHM SemiconductorTrans MOSFET P-CH 30V ±12A 8-Pin HSMT Embossed Tape and Reel - Tape and Reel (Alt: RQ3E120ATTB)
RoHS: Compliant
Min Qty: 3000
Container: Reel
Americas - 3000
  • 30000:$0.1769
  • 18000:$0.1819
  • 12000:$0.1919
  • 6000:$0.2039
  • 3000:$0.2179
RQ3E120ATTB
DISTI # RQ3E120ATTB
ROHM SemiconductorTrans MOSFET P-CH 30V ±12A 8-Pin HSMT Embossed Tape and Reel (Alt: RQ3E120ATTB)
RoHS: Compliant
Min Qty: 3000
Container: Reel
Europe - 0
  • 30000:€0.2439
  • 18000:€0.2629
  • 12000:€0.2849
  • 6000:€0.3099
  • 3000:€0.3799
RQ3E120ATTB
DISTI # RQ3E120ATTB
ROHM SemiconductorTrans MOSFET P-CH 30V ±12A 8-Pin HSMT Embossed Tape and Reel (Alt: RQ3E120ATTB)
RoHS: Compliant
Min Qty: 3000
Container: Reel
Asia - 0
    RQ3E120ATTB
    DISTI # 10AC8918
    ROHM SemiconductorMOSFET, P-CH, -30V, -39A, HSMT,Transistor Polarity:P Channel,Continuous Drain Current Id:-39A,Drain Source Voltage Vds:-30V,On Resistance Rds(on):0.0061ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-2.5V,Power RoHS Compliant: Yes510
    • 1000:$0.2370
    • 500:$0.2610
    • 250:$0.2840
    • 100:$0.3070
    • 50:$0.3730
    • 25:$0.4380
    • 10:$0.5040
    • 1:$0.6060
    RQ3E120ATTB
    DISTI # 755-RQ3E120ATTB
    ROHM SemiconductorMOSFET Pch -30V -12A Middle Power MOSFET
    RoHS: Compliant
    3929
    • 1:$0.6000
    • 10:$0.4990
    • 100:$0.3040
    • 1000:$0.2350
    • 3000:$0.2010
    • 9000:$0.1870
    • 24000:$0.1770
    • 45000:$0.1730
    RQ3E120ATTBROHM Semiconductor 1009
    • 223:$0.7200
    • 57:$0.9000
    • 1:$1.8000
    RQ3E120ATTB
    DISTI # 2706633
    ROHM SemiconductorMOSFET, P-CH, -30V, -39A, HSMT
    RoHS: Compliant
    507
    • 500:$0.4720
    • 100:$0.6000
    • 10:$0.8030
    • 1:$0.9300
    RQ3E120ATTB
    DISTI # 2706633
    ROHM SemiconductorMOSFET, P-CH, -30V, -39A, HSMT1082
    • 500:£0.2220
    • 250:£0.2310
    • 100:£0.2410
    • 10:£0.4410
    • 1:£0.5450
    RQ3E120ATTBROHM Semiconductor 30
    • 1:¥8.1688
    • 100:¥4.6317
    • 1500:¥2.9365
    • 3000:¥2.1877
    RQ3E120ATTBROHM SemiconductorMOSFET PCH -30V -12A MIDDLE POWER
    RoHS: Compliant
    Americas -
      RQ3E120ATTBROHM SemiconductorRoHS(ship within 1day)37
      • 1:$1.0100
      • 10:$0.7600
      • 50:$0.5100
      • 100:$0.4000
      • 500:$0.3800
      • 1000:$0.3600
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      Disponibilità
      Azione:
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      Su ordine:
      2668
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