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Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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| Parte # | Mfg. | Descrizione | Azione | Prezzo |
|---|---|---|---|---|
| SIE812DF-T1-GE3 DISTI # SIE812DF-T1-GE3-ND | Vishay Siliconix | MOSFET N-CH 40V 60A POLARPAK RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR) | Temporarily Out of Stock |
|
| SIE812DF-T1-GE3 DISTI # SIE812DF-T1-GE3 | Vishay Intertechnologies | Trans MOSFET N-CH 40V 33A 10-Pin PolarPAK T/R - Tape and Reel (Alt: SIE812DF-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Reel | Americas - 0 |
|
| SIE812DF-T1-GE3 DISTI # 15R4857 | Vishay Intertechnologies | N CHANNEL MOSFET, 40V, 60A POLARPAK,Transistor Polarity:N Channel,Continuous Drain Current Id:60A,Drain Source Voltage Vds:40V,On Resistance Rds(on):0.0034ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.3V RoHS Compliant: Yes | 0 |
|
| SIE812DF-T1-GE3 DISTI # 26R1858 | Vishay Intertechnologies | N CHANNEL MOSFET, 40V, 60A POLARPAK,Transistor Polarity:N Channel,Continuous Drain Current Id:60A,Drain Source Voltage Vds:40V,On Resistance Rds(on):0.0034ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.3V RoHS Compliant: Yes | 0 |
|
| SIE812DF-T1-GE3 DISTI # 781-SIE812DF-GE3 | Vishay Intertechnologies | MOSFET 40V 163A 125W 2.6mohm @ 10V RoHS: Compliant | 0 |
|
| Immagine | Parte # | Descrizione |
|---|---|---|
|
Mfr.#: SIE812DF-T1-E3 OMO.#: OMO-SIE812DF-T1-E3 |
MOSFET 40V 60A 125W 2.6mohm @ 10V |
|
|
Mfr.#: SIE812DF-T1-GE3 OMO.#: OMO-SIE812DF-T1-GE3 |
MOSFET 40V 163A 125W 2.6mohm @ 10V |
|
Mfr.#: SIE812DF-T1-GE3 OMO.#: OMO-SIE812DF-T1-GE3-VISHAY |
RF Bipolar Transistors MOSFET 40V 163A 125W 2.6mohm @ 10V |
|
|
Mfr.#: SIE812DF-T1-E3 OMO.#: OMO-SIE812DF-T1-E3-VISHAY |
RF Bipolar Transistors MOSFET 40V 60A 125W 2.6mohm @ 10V |
|
Mfr.#: SIE812DF OMO.#: OMO-SIE812DF-1190 |
Nuovo e originale |
