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SIZ340DT-T1-GE3

SIZ340DT-T1-GE3
Mfr. #:
SIZ340DT-T1-GE3
Produttore:
Vishay
Descrizione:
MOSFET 2N-CH 30V 30A PWRPAIR3X3
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
SIZ340DT-T1-GE3 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
SIZ340DT-T1-GE3 maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore
categoria di prodotto
FET - Array
Serie
PowerPAIRR, TrenchFETR
Confezione
Imballaggio alternativo Digi-ReelR
Stile di montaggio
SMD/SMT
Nome depositato
TrenchFET
Pacchetto-Custodia
8-PowerWDFN
Tecnologia
si
Temperatura di esercizio
-55°C ~ 150°C (TJ)
Tipo di montaggio
Montaggio superficiale
Numero di canali
2 Channel
Pacchetto-dispositivo-fornitore
8-Power33 (3x3)
Configurazione
Dual
Tipo FET
2 N-Channel (Half Bridge)
Potenza-Max
16.7W, 31W
Tipo a transistor
2 N-Channel
Drain-to-Source-Voltage-Vdss
30V
Ingresso-Capacità-Ciss-Vds
760pF @ 15V
Funzione FET
Standard
Corrente-Continuo-Scarico-Id-25°C
30A, 40A
Rds-On-Max-Id-Vgs
9.5 mOhm @ 15.6A, 10V
Vgs-th-Max-Id
2.4V @ 250μA
Gate-Carica-Qg-Vgs
19nC @ 10V
Pd-Power-Dissipazione
16.7 W
Massima temperatura di esercizio
+ 150 C
Temperatura di esercizio minima
- 55 C
Tempo di caduta
7 ns
Ora di alzarsi
55 ns
Vgs-Gate-Source-Voltage
20 V
Id-Continuo-Scarico-Corrente
30 A
Vds-Drain-Source-Breakdown-Voltage
30 V
Vgs-th-Gate-Sorgente-Soglia-Tensione
2.4 V
Rds-On-Drain-Source-Resistenza
9.5 mOhms
Polarità del transistor
Canale N
Tempo di ritardo allo spegnimento tipico
16 ns
Tempo di ritardo all'accensione tipico
13 ns
Qg-Gate-Carica
12.3 nC
Modalità canale
Aumento
Tags
SIZ34, SiZ3, SiZ
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
In a Pack of 20, Dual N-Channel MOSFET, 30 A, 40 A, 30 V, 8-Pin PowerPAIR Vishay SIZ340DT-T1-GE3
***ical
Trans MOSFET N-CH 30V 15.6A/22.6A 8-Pin PowerPAIR EP T/R
***et Europe
Trans MOSFET N-CH 30V 15.6A/22.6A 8-Pin PowerPAIR T/R
***ied Electronics & Automation
MOSFET Dual N-Ch 30V 30/40A PowerPAIR8EP
***ure Electronics
MOSFET 2N-CH 30V 30A SOT-23
***ark
MOSFET, DUAL N-CH, 30V, 40A, POWERPAIR-8
***i-Key
MOSFET 2N-CH 30V 30A PWRPAIR3X3
***et
DUAL N-CH POWERPAIR 3X3 30V 9.5 MOHM@10V
***
DUAL N-CHANNEL 30-V (D-S)
Dual N-Channel TrenchFET® Power MOSFETs
Vishay Siliconix Dual N-Channl TrenchFET® Power MOSFETs offers co-packaged MOSFETs to reduce space and increase performance over two discretes. These Dual N-Channel TrenchFET® Power MOSFETs combines two MOSFETs into a compact package. By combining the devices into one package the Vishay Siliconix Dual N-Channel TrenchFET® Power MOSFETs simplify layout, reduces parasitic inductance from PCB traces, increases efficiency and reduces ringing. Typical applications include system power, POL, and synchronous buck converters in notebooks.Learn More
Integrated MOSFET Solutions
Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance. 
PowerPAIR® Dual-MOSFETs
Vishay PowerPAIR® Dual-MOSFETs combine optimized combinations of MOSFETs in one compact package. The co-packaged PowerPAIR Dual-MOSFETs use less space and offer increased performance over separate discretes. By having the two MOSFETs already connected inside the PowerPAIR package, layouts are made easier and parasitic inductance from PCB traces are reduced, increasing efficiency. 
Parte # Mfg. Descrizione Azione Prezzo
SIZ340DT-T1-GE3
DISTI # SIZ340DT-T1-GE3TR-ND		Vishay SiliconixMOSFET 2N-CH 30V 30A PWRPAIR3X3
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		On Order
  • 3000:$0.4096
SIZ340DT-T1-GE3
DISTI # SIZ340DT-T1-GE3CT-ND		Vishay SiliconixMOSFET 2N-CH 30V 30A PWRPAIR3X3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Temporarily Out of Stock
  • 1000:$0.4521
  • 500:$0.5726
  • 100:$0.7384
  • 10:$0.9340
  • 1:$1.0500
SIZ340DT-T1-GE3
DISTI # SIZ340DT-T1-GE3DKR-ND		Vishay SiliconixMOSFET 2N-CH 30V 30A PWRPAIR3X3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Temporarily Out of Stock
  • 1000:$0.4521
  • 500:$0.5726
  • 100:$0.7384
  • 10:$0.9340
  • 1:$1.0500
SIZ340DT-T1-GE3
DISTI # SIZ340DT-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 30V 15.6A/22.6A 8-Pin PowerPAIR T/R - Tape and Reel (Alt: SIZ340DT-T1-GE3)
RoHS: Compliant
Min Qty: 6000
Container: Reel		Americas - 0
  • 6000:$0.3869
  • 12000:$0.3749
  • 18000:$0.3599
  • 30000:$0.3499
  • 60000:$0.3409
SIZ340DT-T1-GE3
DISTI # SIZ340DT-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 30V 15.6A/22.6A 8-Pin PowerPAIR T/R - Tape and Reel (Alt: SIZ340DT-T1-GE3)
RoHS: Compliant
Min Qty: 6000
Container: Reel		Americas - 0
  • 6000:$0.3869
  • 12000:$0.3749
  • 18000:$0.3599
  • 30000:$0.3499
  • 60000:$0.3409
SIZ340DT-T1-GE3
DISTI # 29X6567		Vishay IntertechnologiesTrans MOSFET Array Dual N-CH 30V 30A/40A 9-Pin PowerPAIR Case - Product that comes on tape, but is not reeled (Alt: 29X6567)
RoHS: Compliant
Min Qty: 1
Container: Ammo Pack		Americas - 0
  • 1:$0.9400
  • 25:$0.7670
  • 50:$0.6780
  • 100:$0.5880
  • 250:$0.5470
  • 500:$0.5060
  • 1000:$0.3990
SIZ340DT-T1-GE3
DISTI # 29X6568		Vishay IntertechnologiesMOSFET, DUAL N CHANNEL, 30V, 40A, POWERPAIR-8,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:40A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0042ohm,Rds(on) Test Voltage Vgs:10V,Power Dissipation Pd:31W, RoHS Compliant: Yes0
  • 1:$0.4150
  • 6000:$0.4130
  • 9000:$0.3940
  • 12000:$0.3540
SIZ340DT-T1-GE3
DISTI # 29X6567		Vishay IntertechnologiesMOSFET, DUAL N CHANNEL, 30V, 40A, POWERPAIR-8,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:40A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0042ohm,Rds(on) Test Voltage Vgs:10V,Power Dissipation Pd:31W, RoHS Compliant: Yes0
  • 1:$0.9400
  • 25:$0.7670
  • 50:$0.6780
  • 100:$0.5880
  • 250:$0.5470
  • 500:$0.5060
  • 1000:$0.3990
SIZ340DT-T1-GE3
DISTI # 55X3089		Vishay IntertechnologiesDual MOSFET, Dual N Channel, 40 A, 30 V, 0.0042 ohm, 10 V, 2.4 V , RoHS Compliant: Yes0
  • 1:$0.9400
  • 25:$0.7670
  • 50:$0.6780
  • 100:$0.5880
  • 250:$0.5470
  • 500:$0.5060
  • 1000:$0.3990
SIZ340DT-T1-GE3
DISTI # 70617613		Vishay SiliconixMOSFET Dual N-Ch 30V 30/40A PowerPAIR8EP
RoHS: Compliant		0
  • 100:$0.5800
  • 1500:$0.4300
  • 3000:$0.3900
  • 6000:$0.3700
SIZ340DT-T1-GE3
DISTI # 78-SIZ340DT-T1-GE3		Vishay IntertechnologiesMOSFET 30V Vds 20V Vgs PowerPAIR 3 x 3
RoHS: Compliant		0
  • 1:$0.9400
  • 10:$0.7670
  • 100:$0.5880
  • 500:$0.5060
  • 1000:$0.4790
  • 3000:$0.4440
SIZ340DT-T1-GE3
DISTI # 2422226		Vishay IntertechnologiesMOSFET, DUAL N CH, 30V, 40A, POWERPAIR
RoHS: Compliant		0
  • 1:$1.5000
  • 10:$1.2200
  • 100:$0.9310
  • 500:$0.8020
  • 1000:$0.6320
  • 3000:$0.5910
  • 6000:$0.5600
  • 9000:$0.5400
SIZ340DT-T1-GE3
DISTI # 2422226RL		Vishay IntertechnologiesMOSFET, DUAL N CH, 30V, 40A, POWERPAIR
RoHS: Compliant		0
  • 1:$1.5000
  • 10:$1.2200
  • 100:$0.9310
  • 500:$0.8020
  • 1000:$0.6320
  • 3000:$0.5910
  • 6000:$0.5600
  • 9000:$0.5400
SIZ340DT-T1-GE3Vishay IntertechnologiesMOSFET 30V Vds 20V Vgs PowerPAIR 3 x 3Americas -
    SIZ340DT-T1-GE3
    DISTI # 2422226    		Vishay IntertechnologiesMOSFET, DUAL N CH, 30V, 40A, POWERPAIR
    RoHS: Compliant    		0
    • 5:£0.6070
    • 25:£0.5950
    • 100:£0.4440
    • 250:£0.4290
    • 500:£0.3910
    Immagine Parte # Descrizione
    SIZ340DT-T1-GE3

    Mfr.#: SIZ340DT-T1-GE3

    OMO.#: OMO-SIZ340DT-T1-GE3

    		 MOSFET 30V Vds 20V Vgs PowerPAIR 3 x 3
    SIZ340DT-T1-GE3

    Mfr.#: SIZ340DT-T1-GE3

    OMO.#: OMO-SIZ340DT-T1-GE3-VISHAY

    		 MOSFET 2N-CH 30V 30A PWRPAIR3X3
    SIZ340DT

    Mfr.#: SIZ340DT

    OMO.#: OMO-SIZ340DT-1190

    		 Nuovo e originale
    Disponibilità
    Azione:
    Available
    Su ordine:
    2000
    Inserisci la quantità:
    Il prezzo attuale di SIZ340DT-T1-GE3 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
    Prezzo di riferimento (USD)
    Quantità
    Prezzo unitario
    est. Prezzo
    1
    0,50 USD
    0,50 USD
    10
    0,47 USD
    4,70 USD
    100
    0,45 USD
    44,55 USD
    500
    0,42 USD
    210,40 USD
    1000
    0,40 USD
    396,00 USD
    A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
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