IDW20G120C5BFKSA1

IDW20G120C5BFKSA1
Mfr. #:
IDW20G120C5BFKSA1
Produttore:
Infineon Technologies
Descrizione:
Schottky Diodes & Rectifiers SIC CHIP/DISCRETE
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IDW20G120C5BFKSA1 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
IDW20G120C5BFKSA1 maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
Infineon
Categoria di prodotto:
Diodi e raddrizzatori Schottky
RoHS:
Y
Prodotto:
Diodi Schottky al carburo di silicio
Stile di montaggio:
Foro passante
Pacchetto/custodia:
TO-247-3
Se - Corrente diretta:
20 A
Vrrm - Tensione inversa ripetitiva:
1.2 kV
Vf - Tensione diretta:
1.4 V
Ifsm - Corrente diretta in avanti:
190 A
Configurazione:
Anodo doppio, catodo comune
Tecnologia:
SiC
Ir - Corrente inversa:
12 uA
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 175 C
Confezione:
Tubo
Marca:
Tecnologie Infineon
Pd - Dissipazione di potenza:
250 W
Tipologia di prodotto:
Diodi e raddrizzatori Schottky
Quantità confezione di fabbrica:
240
sottocategoria:
Diodi e raddrizzatori
Nome depositato:
CoolSiC
Vr - Tensione inversa:
1.2 kV
Parte # Alias:
IDW20G120C5B SP001020716
Unità di peso:
1.340411 oz
Tags
IDW20G1, IDW20G, IDW20, IDW2, IDW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
IDW20G120C5B Series 1200 V 62A 5th Generation ThinQ!™SiC Schottky Diode-TO-247-3
***ical
Diode Schottky 1.2KV 62A 3-Pin(3+Tab) TO-247 Tube
***et Europe
Diode Schottky 1.2KV 62A 3-Pin TO-247 Tube
***an P&S
1200V,20A,Silicon Carbide Schottky Diode
***i-Key
DIODE 1.2KV 20A RAPID2 TO247-3
***ukat
SiC-Schottky 1200V 20A(2x10) TO247
***ronik
SiC-D 1200 20A 1,4V TO247-3
***ark
Sic Schottky Diode, 1.2Kv, 62A, To-247; Product Range:thinq Series; Diode Configuration:dual Common Cathode; Repetitive Reverse Voltage Vrrm Max:1.2Kv; Continuous Forward Current If:62A; Total Capacitive Charge Qc:106Nc; Diode Case Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. SIC SCHOTTKY DIODE, 1.2KV, 62A, TO-247; Product Range:thinQ Series; Diode Configuration:Dual Common Cathode; Repetitive Reverse Voltage Vrrm Max:1.2kV; Continuous Forward Current If:62A; Total Capacitive Charge Qc:106nC; Diode Case Style:TO-247; No. of Pins:3 Pin; Junction Temperature Tj Max:175°C; Automotive Qualification Standard:-; SVHC:No SVHC (27-Jun-2018); Forward Current If(AV):62A; Forward Surge Current Ifsm Max:95A; Forward Voltage VF Max:1.65V; Operating Temperature Max:175°C; Semiconductor Technology:SiC
***nell
DIODO SCHOTTKY SIC, 1,2KV, 62A, TO-247; Gamma Prodotti:thinQ Series; Configurazione Diodo:Catodo Comune, Doppio; Tensione Inversa Ripetitiva Vrrm Max:1.2kV; Corrente Diretta Continua If:62A; Potenza Reattiva Capacitiva Qc:106nC; Modello Involucro Diodo:TO-247; Numero di Pin:3 Pin; Temperatura di Giunzione Tj Max:175°C; Standard di Qualifica Automotive:-; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018); Corrente Diretta If(AV):62A; Corrente di Picco Diretta Ifsm Max:95A; Tecnologia Semiconduttori:SiC; Temperatura di Esercizio Max:175°C; Tensione Diretta VF Max:1.65V
***ineon
With CoolSiC generation 5 Infineon presents a new leading edge technology for SiC Schottky Barrier diodes, delivering market leading efficiency, more system reliability at attractive cost point. Infineons thin wafer technology, already introduced with Generation 2, is now combined with a new, merged pn junction bringing improved conduction losses, thermal characteristics and surge capabilities. The result is a series of products delivering improved efficiency and reliability in PFC and Boost stages over all load conditions with respect to all previous CoolSiC generations. | Summary of Features: Best-in-class forward voltage (V F); No reverse recovery charge; Mild positive temperature dependency of V F; Best-in-class surge current capability; Excellent thermal performance; Up to 40A rated diode | Benefits: Highest system efficiency; Improved system efficiency at low switching frequencies; Increased power density at high switching frequencies; Higher system reliability; Reduced EMI | Target Applications: Solar inverters; UPS; 3-phase SMPS; Motor drives
CoolSiC™ Schottky Diodes
Infineon CoolSiC™ Schottky Diodes deliver high reliability, optimum efficiency, and industry-leading SiC performance. The Infineon comprehensive portfolio of Silicon Carbide (SiC) devices encompasses 600V and 650V to 1200V Schottky diodes. A much higher breakdown voltage can be reached in SiC material Schottky diodes.
Gen 5 1200V CoolSiC™ Schottky Diodes
Infineon Gen 5 1200V CoolSiC™ Schottky Diodes are offered with forward currents up to 40A for TO-247, 20A in TO-220 and 10A in DPAK. CoolSiC Diodes target solar inverters, UPS, 3P SMPS, energy storage, and motor drives applications. With reduction of forward voltage and temperature dependency, the diodes bring a new level of system efficiency.
Parte # Mfg. Descrizione Azione Prezzo
IDW20G120C5BFKSA1
DISTI # V99:2348_06377645
Infineon Technologies AGDiode Schottky 1.2KV 62A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant
104
  • 1000:$9.1560
  • 500:$9.8320
  • 250:$10.5650
  • 100:$11.1820
  • 25:$12.6910
  • 10:$13.3190
  • 1:$14.5100
IDW20G120C5BFKSA1
DISTI # IDW20G120C5BFKSA1-ND
Infineon Technologies AGDIODE 1.2KV 20A RAPID2 TO247-3
RoHS: Compliant
Min Qty: 1
Container: Tube
103In Stock
  • 240:$12.3639
  • 10:$14.6390
  • 1:$15.9300
IDW20G120C5BFKSA1
DISTI # 30294852
Infineon Technologies AGDiode Schottky 1.2KV 62A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant
420
  • 2:$9.2673
IDW20G120C5BFKSA1
DISTI # 27580820
Infineon Technologies AGDiode Schottky 1.2KV 62A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant
104
  • 100:$11.1820
  • 25:$12.6910
  • 10:$13.3190
  • 1:$14.5100
IDW20G120C5BFKSA1
DISTI # IDW20G120C5BFKSA1
Infineon Technologies AGDiode Schottky 1.2KV 62A 3-Pin TO-247 Tube - Rail/Tube (Alt: IDW20G120C5BFKSA1)
RoHS: Compliant
Min Qty: 240
Container: Tube
Americas - 0
  • 240:$10.3900
  • 480:$9.9900
  • 960:$9.5900
  • 1440:$9.2900
  • 2400:$9.0900
IDW20G120C5BFKSA1
DISTI # SP001020716
Infineon Technologies AGDiode Schottky 1.2KV 62A 3-Pin TO-247 Tube (Alt: SP001020716)
RoHS: Compliant
Min Qty: 1
Container: Tube
Europe - 0
  • 1:€11.0900
  • 10:€10.1900
  • 25:€9.7900
  • 50:€9.3900
  • 100:€8.9900
  • 500:€8.6900
  • 1000:€8.0900
IDW20G120C5BFKSA1
DISTI # 12AC9659
Infineon Technologies AGSIC SCHOTTKY DIODE, 1.2KV, 62A, TO-247,Product Range:thinQ Series,Diode Configuration:Dual Common Cathode,Repetitive Reverse Voltage Vrrm Max:1.2kV,Continuous Forward Current If:62A,Total Capacitive Charge Qc:106nC,Diode Case , RoHS Compliant: Yes33
  • 1:$15.1700
  • 10:$13.9500
  • 25:$13.3700
  • 50:$12.5800
  • 100:$11.7800
  • 250:$11.2000
  • 500:$10.4800
IDW20G120C5BFKSA1
DISTI # 726-IDW20G120C5BFKSA
Infineon Technologies AGSchottky Diodes & Rectifiers SIC CHIP/DISCRETE
RoHS: Compliant
147
  • 1:$15.1700
  • 10:$13.9500
  • 25:$13.3700
  • 100:$11.7800
  • 250:$11.2000
  • 500:$10.4800
IDW20G120C5BFKSA1
DISTI # IDW20G120C5BFKSA1
Infineon Technologies AGDiode: Schottky rectifying,SiC,THT,1.2kV,2x10A,250W,Ir:12uA6
  • 1:$23.8000
  • 3:$20.5100
  • 10:$16.4900
IDW20G120C5BFKSA1
DISTI # IDW20G120C5B
Infineon Technologies AGSiC-Schottky 1200V 20A(2x10) TO247
RoHS: Compliant
35
  • 1:€12.7500
  • 25:€9.7500
  • 100:€8.8500
  • 200:€8.5000
IDW20G120C5BFKSA1
DISTI # C1S322000566578
Infineon Technologies AGRectifier Diodes420
  • 100:$12.1000
  • 50:$14.6000
  • 25:$15.8000
  • 10:$17.2000
  • 5:$17.6000
  • 1:$23.4000
IDW20G120C5BFKSA1
DISTI # 2709929
Infineon Technologies AGSIC SCHOTTKY DIODE, 1.2KV, 62A, TO-247
RoHS: Compliant
64
  • 1:£11.9900
  • 5:£11.5800
  • 10:£10.2100
  • 50:£9.6100
  • 100:£9.0000
IDW20G120C5BFKSA1
DISTI # 2709929
Infineon Technologies AGSIC SCHOTTKY DIODE, 1.2KV, 62A, TO-247
RoHS: Compliant
33
  • 1:$22.3000
  • 10:$20.8500
  • 100:$18.4400
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INA317IDGKR

Mfr.#: INA317IDGKR

OMO.#: OMO-INA317IDGKR

Instrumentation Amplifiers LOW POWER INSTRUMENTATION AMP
OPA2189IDR

Mfr.#: OPA2189IDR

OMO.#: OMO-OPA2189IDR

Operational Amplifiers - Op Amps 36V ZERO DRIFT OPAMP
1EDC60H12AHXUMA1

Mfr.#: 1EDC60H12AHXUMA1

OMO.#: OMO-1EDC60H12AHXUMA1

Gate Drivers DRIVER IC
IDDD20G65C6XTMA1

Mfr.#: IDDD20G65C6XTMA1

OMO.#: OMO-IDDD20G65C6XTMA1

Schottky Diodes & Rectifiers SIC DIODES
IDDD10G65C6XTMA1

Mfr.#: IDDD10G65C6XTMA1

OMO.#: OMO-IDDD10G65C6XTMA1

Schottky Diodes & Rectifiers SIC DIODES
IDM10G120C5XTMA1

Mfr.#: IDM10G120C5XTMA1

OMO.#: OMO-IDM10G120C5XTMA1

Schottky Diodes & Rectifiers SIC CHIP/DISCRETE
DG613EEQ-T1-GE4

Mfr.#: DG613EEQ-T1-GE4

OMO.#: OMO-DG613EEQ-T1-GE4

Analog Switch ICs Quad SPST 1.4pC 16-pin TSSOP
C4AQLBW5900A3OK

Mfr.#: C4AQLBW5900A3OK

OMO.#: OMO-C4AQLBW5900A3OK

Film Capacitors 500V 90uF LS=37.5mm 10% AEC-Q200
DG613EEQ-T1-GE4

Mfr.#: DG613EEQ-T1-GE4

OMO.#: OMO-DG613EEQ-T1-GE4-VISHAY

IC ANALOG SWITCH 16TSSOP
IDDD10G65C6XTMA1

Mfr.#: IDDD10G65C6XTMA1

OMO.#: OMO-IDDD10G65C6XTMA1-INFINEON-TECHNOLOGIES

SIC DIODES
Disponibilità
Azione:
82
Su ordine:
2065
Inserisci la quantità:
Il prezzo attuale di IDW20G120C5BFKSA1 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
10,88 USD
10,88 USD
10
10,00 USD
100,00 USD
25
9,59 USD
239,75 USD
100
8,45 USD
845,00 USD
250
8,03 USD
2 007,50 USD
500
7,51 USD
3 755,00 USD
1000
6,89 USD
6 890,00 USD
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