IDM10G120C5XTMA1

Mfr. #:: IDM10G120C5XTMA1
Produttore:: Infineon Technologies
Descrizione:: Schottky Diodes & Rectifiers SIC CHIP/DISCRETE
Ciclo vitale:: Nuovo da questo produttore.
Scheda dati:: IDM10G120C5XTMA1 Scheda dati
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ECAD Model:
Maggiori informazioni:: IDM10G120C5XTMA1 maggiori informazioni

Attributo del prodotto
Valore attributo

Produttore:: Infineon

Categoria di prodotto:: Diodi e raddrizzatori Schottky

RoHS:: Y

Prodotto:: Diodi Schottky al carburo di silicio

Stile di montaggio:: SMD/SMT

Pacchetto/custodia:: TO-252-2

Se - Corrente diretta:: 10 A

Vrrm - Tensione inversa ripetitiva:: 1.2 kV

Vf - Tensione diretta:: 1.5 V

Ifsm - Corrente diretta in avanti:: 99 A

Configurazione:: Separare

Tecnologia:: SiC

Ir - Corrente inversa:: 4 uA

Temperatura di esercizio minima:: - 55 C

Temperatura massima di esercizio:: + 175 C

Confezione:: Bobina

Marca:: Tecnologie Infineon

Pd - Dissipazione di potenza:: 223 W

Tipologia di prodotto:: Diodi e raddrizzatori Schottky

Quantità confezione di fabbrica:: 2500

sottocategoria:: Diodi e raddrizzatori

Nome depositato:: CoolSiC

Vr - Tensione inversa:: 1.2 kV

Parte # Alias:: IDM10G120C5 SP001127116

Unità di peso:: 0.011993 oz

Tags: IDM10, IDM1, IDM

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IDM10G120C5XTMA1 Descrizione

*** Stop Electro: Rectifier Diode, Schottky, 1 Phase, 1 Element, 1200V V(RRM), Silicon Carbide, TO-252

***ineon SCT: 1200 V Silicion Carbide Schottky diode in a DPAK real2pin package, PG-TO252-2, RoHS

***ure Electronics: IDM10G120C5 Series 1200 V 38 A 5th Generation ThinQ!SiC Schottky Diode-TO-252-3

***ical: Rectifier Diode Schottky 1.2KV 38A 3-Pin(2+Tab) DPAK T/R

***nell: SIC SCHOTTKY DIODE, 1.2KV, 38A, TO-252; Product Range: thinQ 5G 1200V Series; Diode Configuration: Single; Repetitive Reverse Voltage Vrrm Max: 1.2kV; Continuous Forward Current If: 38A; Total Capacitive Charge Qc: 41nC; Diode Case Style: TO-252; No. of Pins: 2 Pin; Junction Temperature Tj Max: 175°C; Automotive Qualification Standard: -; SVHC: No SVHC (27-Jun-2018); Forward Current If(AV): 38A; Forward Surge Current Ifsm Max: 99A; Forward Voltage VF Max: 1.8V; Operating Temperature Max: 175°C; Semiconductor Technology: SiC

***ineon: With CoolSiC generation 5 Infineon presents a new leading edge technology for SiC Schottky Barrier diodes, delivering market leading efficiency, more system reliability at attractive cost point. Infineons thin wafer technology, already introduced with Generation 2, is now combined with a new, merged pn junction bringing improved conduction losses, thermal characteristics and surge capabilities. The result is a series of products delivering improved efficiency and reliability in PFC and Boost stages over all load conditions with respect to all previous CoolSiC generations. | Summary of Features: Best-in-class forward voltage (V F); No reverse recovery charge; Mild positive temperature dependency of V F; Best-in-class surge current capability; Excellent thermal performance; Up to 40A rated diode | Benefits: Highest system efficiency; Improved system efficiency at low switching frequencies; Increased power density at high switching frequencies; Higher system reliability; Reduced EMI | Target Applications: Solar inverters; UPS; 3-phase SMPS; Motor drives

IDM10G120C5XTMA1 Maggiori informazioni

CoolSiC™ Schottky Diodes: Infineon CoolSiC™ Schottky Diodes deliver high reliability, optimum efficiency, and industry-leading SiC performance. The Infineon comprehensive portfolio of Silicon Carbide (SiC) devices encompasses 600V and 650V to 1200V Schottky diodes. A much higher breakdown voltage can be reached in SiC material Schottky diodes.

Gen 5 1200V CoolSiC™ Schottky Diodes: Infineon Gen 5 1200V CoolSiC™ Schottky Diodes are offered with forward currents up to 40A for TO-247, 20A in TO-220 and 10A in DPAK. CoolSiC Diodes target solar inverters, UPS, 3P SMPS, energy storage, and motor drives applications. With reduction of forward voltage and temperature dependency, the diodes bring a new level of system efficiency.

Market price

Parte #	Mfg.	Descrizione	Azione	Prezzo
IDM10G120C5XTMA1 DISTI # V72:2272_13989816	Infineon Technologies AG	Diode Schottky 1.2KV 38A 3-Pin(2+Tab) DPAK T/R RoHS: Compliant	525	500:$4.9380 250:$5.3860 100:$5.7920 25:$6.5120 10:$6.7810 1:$7.3710
IDM10G120C5XTMA1 DISTI # IDM10G120C5XTMA1CT-ND	Infineon Technologies AG	DIODE SCHTKY 1200V 38A PGTO252-2 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	2026In Stock	500:$5.9293 100:$6.8092 10:$8.2250 1:$9.1000
IDM10G120C5XTMA1 DISTI # IDM10G120C5XTMA1DKR-ND	Infineon Technologies AG	DIODE SCHTKY 1200V 38A PGTO252-2 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	2026In Stock	500:$5.9293 100:$6.8092 10:$8.2250 1:$9.1000
IDM10G120C5XTMA1 DISTI # IDM10G120C5XTMA1TR-ND	Infineon Technologies AG	DIODE SCHTKY 1200V 38A PGTO252-2 RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	Temporarily Out of Stock	2500:$4.9519
IDM10G120C5XTMA1 DISTI # 26196598	Infineon Technologies AG	Diode Schottky 1.2KV 38A 3-Pin(2+Tab) DPAK T/R RoHS: Compliant	525	500:$4.9380 250:$5.3860 100:$5.7920 25:$6.5120 10:$6.7810 2:$7.3710
IDM10G120C5XTMA1 DISTI # IDM10G120C5XTMA1	Infineon Technologies AG	SIC CHIP/DISCRETE - Tape and Reel (Alt: IDM10G120C5XTMA1) RoHS: Compliant Min Qty: 2500 Container: Reel	Americas - 0	2500:$4.9900 5000:$4.8900 10000:$4.6900 15000:$4.4900 25000:$4.3900
IDM10G120C5XTMA1 DISTI # 34AC1583	Infineon Technologies AG	SIC SCHOTTKY DIODE, 1.2KV, 38A, TO-252,Product Range:thinQ 5G 1200V Series,Diode Configuration:Single,Repetitive Reverse Voltage Vrrm Max:1.2kV,Continuous Forward Current If:38A,Total Capacitive Charge Qc:41nC,Diode Case , RoHS Compliant: Yes	2042	1:$8.4200 10:$7.6100 25:$7.2600 50:$6.7800 100:$6.3000 250:$6.0200 500:$5.4900 1000:$4.7800
IDM10G120C5XTMA1 DISTI # 726-IDM10G120C5XTMA1	Infineon Technologies AG	Schottky Diodes & Rectifiers SIC CHIP/DISCRETE RoHS: Compliant	4953	1:$8.4200 10:$7.6100 25:$7.2600 100:$6.3000 250:$6.0200 500:$5.4900 1000:$4.7800 2500:$4.6000
IDM10G120C5XTMA1 DISTI # 2780807	Infineon Technologies AG	SIC SCHOTTKY DIODE, 1.2KV, 38A, TO-252 RoHS: Compliant	1877	1:£6.6200 5:£6.1700 10:£5.7100 50:£5.3300 100:£4.9500
IDM10G120C5XTMA1 DISTI # C1S322000680072	Infineon Technologies AG	Rectifier Diodes RoHS: Compliant	525	250:$5.3860 100:$5.7920 25:$6.5120 10:$6.7810 1:$7.3710
IDM10G120C5XTMA1 DISTI # 2780807	Infineon Technologies AG	SIC SCHOTTKY DIODE, 1.2KV, 38A, TO-252 RoHS: Compliant	1867	1:$10.9200 5:$10.2100 10:$9.0300 50:$8.5400 100:$8.1000 250:$7.7000

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Disponibilità

Azione:: Available
Su ordine:: 1987
Inserisci la quantità:

Il prezzo attuale di IDM10G120C5XTMA1 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]

Prezzo di riferimento (USD)

Quantità
Prezzo unitario
est. Prezzo

1: ~~6,21 USD~~; ~~6,21 USD~~

10: ~~5,28 USD~~; ~~52,80 USD~~

100: ~~4,58 USD~~; ~~458,00 USD~~

250: ~~4,34 USD~~; ~~1 085,00 USD~~

500: ~~3,90 USD~~; ~~1 950,00 USD~~

1000: ~~3,28 USD~~; ~~3 280,00 USD~~

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IDM10G120C5XTMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes