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DXT2010P5-13

DXT2010P5-13
Mfr. #:
DXT2010P5-13
Produttore:
Diodes Incorporated
Descrizione:
Bipolar Transistors - BJT BIPOLAR TRANS,NPN 60V,6A
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
DXT2010P5-13 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
DXT2010P5-13 DatasheetDXT2010P5-13 Datasheet (P4-P6)DXT2010P5-13 Datasheet (P7)
ECAD Model:
Maggiori informazioni:
DXT2010P5-13 maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
Diodi incorporati
Categoria di prodotto:
Transistor bipolari - BJT
RoHS:
Y
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
PowerDI-5
Polarità del transistor:
NPN
Configurazione:
Separare
Tensione collettore-emettitore VCEO Max:
60 V
Collettore-tensione di base VCBO:
150 V
Emettitore-tensione di base VEBO:
7 V
Tensione di saturazione collettore-emettitore:
260 mV
Corrente massima del collettore CC:
20 A
Guadagno larghezza di banda prodotto fT:
130 MHz
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 150 C
Serie:
DXT201
Confezione:
Bobina
Marca:
Diodi incorporati
Corrente continua del collettore:
6 A
Guadagno base/collettore DC hfe min:
20 at 10 A, 1 V
Pd - Dissipazione di potenza:
740 mW
Tipologia di prodotto:
BJT - Transistor bipolari
Quantità confezione di fabbrica:
5000
sottocategoria:
transistor
Unità di peso:
0.003386 oz
Tags
DXT20, DXT2, DXT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
DXT2010 Series NPN 60 V 6 A Surface Mount BIPOLAR Transistor - PowerDI-5
***ical
Trans GP BJT NPN 60V 6A 3200mW Automotive 3-Pin(3+Tab) PowerDI 5 T/R
***nsix Microsemi
Small Signal Bipolar Transistor, 6A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-252
***(Formerly Allied Electronics)
60V NPN Power Transistor PowerDI5 | Diodes Inc DXT2010P5-13
***ronik
NPN TRANSISTOR 60V 6A P-DI5 RoHSconf
***ment14 APAC
Transistor, NPN, 60V, 6A, POWERDI5; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:60V; Transition Frequency ft:130MHz; Power
***ark
Transistor, Npn, 60V, 6A, 3.2W, Powerdi5; Transistor Polarity:Npn; Collector Emitter Voltage Max:60V; Continuous Collector Current:6A; Power Dissipation:3.2W; Transistor Mounting:Surface Mount; No. Of Pins:3Pins; Product Range:- Rohs Compliant: Yes |Diodes Inc. DXT2010P5-13
***nell
TRANS, NPN, 60V, 6A, POWERDI5; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 60V; Transition Frequency ft: 130MHz; Power Dissipation Pd: 3.2W; DC Collector Current: 6A; DC Current Gain hFE: 200hFE; Transistor Case Style: PowerDI5; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019); Gain Bandwidth ft Typ: 130MHz; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C
***ure Electronics
ZXTN2010G Series NPN 6 A 60 V SMT Silicon Medium Power Transistor - SOT-223
***ical
Trans GP BJT NPN 60V 6A 3000mW 4-Pin(3+Tab) SOT-223 T/R
***nsix Microsemi
Power Bipolar Transistor, 6A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-261AA, Plastic/Epoxy, 4 Pin
***(Formerly Allied Electronics)
Transistor,NPN,6A,60V,SOT223 | Diodes Inc ZXTN2010GTA
***ment14 APAC
Transistor, NPN, SOT-223; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:80V; Transition Frequency ft:130MHz; Power Dissipation Pd:1.6W;
***ark
Transistor, Npn, 80V, 6A, 1.6W, Sot-223; Transistor Polarity:Npn; Collector Emitter Voltage Max:80V; Continuous Collector Current:6A; Power Dissipation:1.6W; Transistor Mounting:Surface Mount; No. Of Pins:4Pins; Product Range:- Rohs Compliant: Yes |Diodes Inc. ZXTN2010GTA
***nell
TRANSISTOR, NPN, SOT-223; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 80V; Transition Frequency ft: 130MHz; Power Dissipation Pd: 1.6W; DC Collector Current: 6A; DC Current Gain hFE: 200hFE; Transistor Case Style: SOT-223; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (15-Jan-2019); Collector Emitter Saturation Voltage Vce(on): 30mV; Current Ic Continuous a Max: 6A; Gain Bandwidth ft Typ: 130MHz; Hfe Min: 100; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Termination Type: Surface Mount Device
***ure Electronics
ZX5T851G Series NPN 6 A 60V SMT Medium Power Low Saturation Transistor - SOT-223
***icontronic
Small Signal Bipolar Transistor, 6A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon
***ow.cn
Trans GP BJT NPN 60V 6A 3000mW 4-Pin(3+Tab) SOT-223 T/R
***(Formerly Allied Electronics)
60V NPN Low Saturation Transistor SOT223 | Diodes Inc ZX5T851GTA
***ment14 APAC
TRANSISTOR, NPN, SOT-223; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:60V; Transition Frequency Typ ft:130MHz; Power Dissipation Pd:1.6W; DC Collector Current:6A; DC Current Gain hFE:200; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-223; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Av Current Ic:6A; Collector Emitter Voltage Vces:210mV; Continuous Collector Current Ic Max:6A; Current Ic @ Vce Sat:6A; Current Ic Continuous a Max:6A; Current Ic hFE:5A; Full Power Rating Temperature:25°C; Gain Bandwidth ft Typ:130MHz; Hfe Min:55; No. of Transistors:1; Package / Case:SOT-223; Power Dissipation Pd:1.6W; Power Dissipation Ptot Max:3W; Pulsed Current Icm:20A; Resistance R1:35mohm; SMD Marking:X5T851; Termination Type:SMD; Voltage Vcbo:150V
***nsix Microsemi
Power Bipolar Transistor, 6A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin
***(Formerly Allied Electronics)
60V NPN Low Saturation Transistor SOT223 | Diodes Inc DSS60601MZ4-13
***p One Stop Global
Trans GP BJT NPN 60V 6A 1200mW Automotive 4-Pin(3+Tab) SOT-223 T/R
***ure Electronics
DSS60601MZ4 Series 60 V 6 A Low VCE(SAT) NPN Surface Mount Transistor - SOT-223
***nell
TRANSISTOR, NPN, SOT223, 1.2W; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 60V; Transition Frequency ft: 100MHz; Power Dissipation Pd: 1.2W; DC Collector Current: 100mA; DC Current Gain hFE: 150hFE; Transistor Case Style: SOT-223; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Collector Emitter Saturation Voltage Vce(on): 40mV; Current Ic Continuous a Max: 100mA; Gain Bandwidth ft Typ: 100MHz; Hfe Min: 150; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Termination Type: Surface Mount Device; Transistor Type: Low Saturation (BISS)
***i-Key
TRANS NPN 50V 5A CPH3
*** International
CPH3239-TL-E SANYO
***nell
TRANSISTOR, NPN, 50V, 5A, SOT346; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:50V; Typ Gain Bandwidth ft:330MHz; Power Dissipation Pd:900mW; DC Collector Current:5A; DC Current Gain hFE:400; Transistor Case Style:SOT-346; No. of Pins:3
PowerDI 5 Bipolar Transistors
Diodes Incorporated PowerDI® 5 bipolar transistors are the first bipolar transistors in a PowerDI 5 package, which provides a 47% space savings over the SOT223 package. These Diodes Incorporated PowerDI 5 bipolar transistors are also 60% smaller than DPAK (TO252) package devices. The PowerDI 5 has a low profile of just 1.1mm, making it ideally suited for applications with component height restrictions. These Diodes Incorporated bipolar transistors are highly efficient devices aimed at datacom, telecom, motor drive, and battery charger applications.
Parte # Mfg. Descrizione Azione Prezzo
DXT2010P5-13
DISTI # DXT2010P5-13CT-ND		Diodes IncorporatedTRANS NPN 60V 6A POWERDI5
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		491In Stock
  • 1000:$0.3230
  • 500:$0.3955
  • 100:$0.4916
  • 10:$0.6310
  • 1:$0.7100
DXT2010P5-13
DISTI # DXT2010P5-13DKR-ND		Diodes IncorporatedTRANS NPN 60V 6A POWERDI5
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		491In Stock
  • 1000:$0.3230
  • 500:$0.3955
  • 100:$0.4916
  • 10:$0.6310
  • 1:$0.7100
DXT2010P5-13
DISTI # DXT2010P5-13TR-ND		Diodes IncorporatedTRANS NPN 60V 6A POWERDI5
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		On Order
  • 10000:$0.2608
  • 5000:$0.2696
DXT2010P5-13
DISTI # DXT2010P5-13		Diodes IncorporatedTrans GP BJT NPN 60V 6A 3-Pin(2+Tab) PowerDI 5 T/R (Alt: DXT2010P5-13)
RoHS: Compliant
Min Qty: 5000
Container: Tape and Reel		Europe - 0
  • 5000:€0.2089
  • 10000:€0.1989
  • 20000:€0.1949
  • 30000:€0.1919
  • 50000:€0.1839
DXT2010P5-13
DISTI # DXT2010P5-13		Diodes IncorporatedTrans GP BJT NPN 60V 6A 3-Pin(2+Tab) PowerDI 5 T/R - Tape and Reel (Alt: DXT2010P5-13)
RoHS: Not Compliant
Min Qty: 5000
Container: Reel		Americas - 0
  • 5000:$0.2259
  • 10000:$0.2149
  • 20000:$0.2049
  • 30000:$0.1949
  • 50000:$0.1909
DXT2010P5-13
DISTI # 70550436		Diodes Incorporated60V NPN Power Transistor PowerDI5
RoHS: Compliant		0
  • 125:$0.3100
  • 500:$0.2800
  • 2500:$0.2700
DXT2010P5-13
DISTI # 522-DXT2010P5-13		Diodes IncorporatedBipolar Transistors - BJT BIPOLAR TRANS,NPN 60V,6A
RoHS: Compliant		597
  • 1:$0.6000
  • 10:$0.4960
  • 100:$0.3200
  • 1000:$0.2560
  • 5000:$0.2170
DXT2010P5-13
DISTI # 1823451		Diodes IncorporatedTRANS, NPN, 60V, 6A, POWERDI5
RoHS: Compliant		0
  • 5:£0.4420
  • 25:£0.3180
  • 100:£0.2520
  • 250:£0.2350
  • 500:£0.2190
DXT2010P5-13
DISTI # 1823451		Diodes IncorporatedTRANS, NPN, 60V, 6A, POWERDI5
RoHS: Compliant		30
  • 1:$0.5510
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Disponibilità
Azione:
Available
Su ordine:
1989
Inserisci la quantità:
Il prezzo attuale di DXT2010P5-13 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
0,59 USD
0,59 USD
10
0,50 USD
4,96 USD
100
0,32 USD
32,00 USD
1000
0,26 USD
256,00 USD
A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
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