NSS35200MR6T1G

NSS35200MR6T1G
Mfr. #:
NSS35200MR6T1G
Produttore:
ON Semiconductor
Descrizione:
Bipolar Transistors - BJT 2A 35V Low VCEsat
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
NSS35200MR6T1G Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
NSS35200MR6T1G DatasheetNSS35200MR6T1G Datasheet (P4-P6)
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore:
ON Semiconductor
Categoria di prodotto:
Transistor bipolari - BJT
RoHS:
Y
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
TSOP-6
Polarità del transistor:
PNP
Configurazione:
Separare
Tensione collettore-emettitore VCEO Max:
- 35 V
Collettore-tensione di base VCBO:
- 55 V
Emettitore-tensione di base VEBO:
5 V
Tensione di saturazione collettore-emettitore:
- 0.26 V
Corrente massima del collettore CC:
2 A
Guadagno larghezza di banda prodotto fT:
100 MHz
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 150 C
Serie:
NSS35200MR6T1G
Altezza:
0.94 mm
Lunghezza:
3 mm
Confezione:
Bobina
Larghezza:
1.5 mm
Marca:
ON Semiconductor
Corrente continua del collettore:
- 2 A
Pd - Dissipazione di potenza:
625 mW
Tipologia di prodotto:
BJT - Transistor bipolari
Quantità confezione di fabbrica:
3000
sottocategoria:
transistor
Unità di peso:
0.000705 oz
Tags
NSS35200M, NSS35, NSS3, NSS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
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Trans GP BJT PNP 35V 2A 1000mW Automotive 6-Pin TSOP T/R
***SIT Distribution GmbH
Small Signal Bipolar Transistor, 2A I(C), 35V V(BR)CEO, 1-Element, PNP, Silicon
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BIPOLAR TRANSISTOR, PNP, -35V, TSOP, FULL REEL; Transistor Polarity:PNP; Collector Emitter Voltage Max:35V; Continuous Collector Current:2A; Power Dissipation:625mW; Transistor Mounting:Surface Mount; No. of Pins:6Pins RoHS Compliant: Yes
***ment14 APAC
BIPOLAR, TRANSISTOR; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:35V; Transition Frequency Typ ft:100MHz; Power Dissipation Pd:625mW; DC Collector Current:2A; DC Current Gain hFE:200; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TSOP; No. of Pins:6; SVHC:No SVHC (19-Dec-2011); Collector Emitter Voltage Vces:200mV; Gain Bandwidth ft Typ:100MHz; Hfe Min:400; Package / Case:6-TSOP
***et
Trans GP BJT PNP 35V 2A 6-Pin TSOP T/R
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BJT ARRAY, NPN & PNP, 45V, 100MA, 6-SOT-457; Module Configuration:Dual; Transistor Polarity:NPN & PNP; Collector Emitter Voltage V(br)ceo:45V; Power Dissipation Pd:400mW; DC Collector Current:100mA; DC Current Gain Max (hfe):320 ;RoHS Compliant: Yes
Parte # Mfg. Descrizione Azione Prezzo
NSS35200MR6T1G
DISTI # V72:2272_07318108
ON SemiconductorTrans GP BJT PNP 35V 2A Automotive 6-Pin TSOP T/R
RoHS: Compliant
1729
  • 1000:$0.1366
  • 500:$0.1670
  • 250:$0.1855
  • 100:$0.1928
  • 25:$0.3180
  • 10:$0.3533
  • 1:$0.4750
NSS35200MR6T1G
DISTI # NSS35200MR6T1GOSCT-ND
ON SemiconductorTRANS PNP 35V 2A TSOP-6
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
8184In Stock
  • 1000:$0.1645
  • 500:$0.2193
  • 100:$0.2925
  • 10:$0.4300
  • 1:$0.5300
NSS35200MR6T1G
DISTI # NSS35200MR6T1GOSDKR-ND
ON SemiconductorTRANS PNP 35V 2A TSOP-6
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
8184In Stock
  • 1000:$0.1645
  • 500:$0.2193
  • 100:$0.2925
  • 10:$0.4300
  • 1:$0.5300
NSS35200MR6T1G
DISTI # NSS35200MR6T1GOSTR-ND
ON SemiconductorTRANS PNP 35V 2A TSOP-6
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
3000In Stock
  • 30000:$0.1183
  • 15000:$0.1286
  • 6000:$0.1375
  • 3000:$0.1464
SNSS35200MR6T1G
DISTI # SNSS35200MR6T1G-ND
ON SemiconductorTRANS PNP 35V 2A TSOP-6
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 3000:$0.2695
NSS35200MR6T1G
DISTI # 25775620
ON SemiconductorTrans GP BJT PNP 35V 2A Automotive 6-Pin TSOP T/R
RoHS: Compliant
1729
  • 1000:$0.1366
  • 500:$0.1670
  • 250:$0.1855
  • 100:$0.1928
  • 60:$0.3180
NSS35200MR6T1G
DISTI # NSS35200MR6T1G
ON SemiconductorTrans GP BJT PNP 35V 2A 6-Pin TSOP T/R - Tape and Reel (Alt: NSS35200MR6T1G)
RoHS: Compliant
Min Qty: 3000
Container: Reel
Americas - 3000
  • 3000:$0.1149
  • 6000:$0.1119
  • 12000:$0.1089
  • 18000:$0.1059
  • 30000:$0.1039
NSS35200MR6T1G
DISTI # NSS35200MR6T1G
ON SemiconductorTrans GP BJT PNP 35V 2A 6-Pin TSOP T/R (Alt: NSS35200MR6T1G)
RoHS: Compliant
Min Qty: 6000
Container: Tape and Reel
Asia - 0
  • 6000:$0.1205
  • 12000:$0.1159
  • 18000:$0.1116
  • 30000:$0.1076
  • 60000:$0.1039
  • 150000:$0.1004
  • 300000:$0.0988
NSS35200MR6T1G
DISTI # NSS35200MR6T1G
ON SemiconductorTrans GP BJT PNP 35V 2A 6-Pin TSOP T/R (Alt: NSS35200MR6T1G)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel
Europe - 0
  • 3000:€0.2139
  • 6000:€0.1659
  • 12000:€0.1359
  • 18000:€0.1149
  • 30000:€0.1069
SNSS35200MR6T1G
DISTI # SNSS35200MR6T1G
ON SemiconductorTrans GP BJT PNP 35V 2A 6-Pin TSOP T/R - Tape and Reel (Alt: SNSS35200MR6T1G)
RoHS: Compliant
Min Qty: 3000
Container: Reel
Americas - 0
  • 3000:$0.2309
  • 6000:$0.2289
  • 12000:$0.2259
  • 18000:$0.2239
  • 30000:$0.2179
SNSS35200MR6T1G
DISTI # SNSS35200MR6T1G
ON SemiconductorTrans GP BJT PNP 35V 2A 6-Pin TSOP T/R (Alt: SNSS35200MR6T1G)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel
Europe - 0
  • 3000:€0.3479
  • 6000:€0.2849
  • 12000:€0.2609
  • 18000:€0.2409
  • 30000:€0.2239
NSS35200MR6T1G
DISTI # 61K1271
ON SemiconductorBIPOLAR TRANSISTOR, PNP, -35V, TSOP,Transistor Polarity:PNP,Collector Emitter Voltage V(br)ceo:-35V,Transition Frequency ft:100MHz,Power Dissipation Pd:1.75W,DC Collector Current:-2A,DC Current Gain hFE:100hFE,Product Range:- RoHS Compliant: Yes0
  • 1:$0.1690
SNSS35200MR6T1G
DISTI # 76T7390
ON SemiconductorSSP LOW VCES 30V NPN XTR / REEL0
  • 1:$0.3540
NSS35200MR6T1G
DISTI # 863-NSS35200MR6T1G
ON SemiconductorBipolar Transistors - BJT 2A 35V Low VCEsat
RoHS: Compliant
977
  • 1:$0.5000
  • 10:$0.3750
  • 100:$0.2030
  • 1000:$0.1530
  • 3000:$0.1310
  • 9000:$0.1230
  • 24000:$0.1130
  • 45000:$0.1090
SNSS35200MR6T1G
DISTI # 863-SNSS35200MR6T1G
ON SemiconductorBipolar Transistors - BJT SSP LOW VCES 30V NPN XTR
RoHS: Compliant
0
  • 1:$0.6700
  • 10:$0.5490
  • 100:$0.3540
  • 1000:$0.2840
  • 3000:$0.2390
  • 9000:$0.2310
  • 24000:$0.2220
NSS35200MR6T1GON Semiconductor 
RoHS: Not Compliant
444199
  • 1000:$0.1200
  • 100:$0.1300
  • 500:$0.1300
  • 25:$0.1400
  • 1:$0.1500
Immagine Parte # Descrizione
TL331QDBVRQ1

Mfr.#: TL331QDBVRQ1

OMO.#: OMO-TL331QDBVRQ1

Analog Comparators AC Sgl Diff Comp- arator
TLV4314QPWRQ1

Mfr.#: TLV4314QPWRQ1

OMO.#: OMO-TLV4314QPWRQ1

Operational Amplifiers - Op Amps 3-MHz, Low-Power Internal EMI Filter
NSS30201MR6T1G

Mfr.#: NSS30201MR6T1G

OMO.#: OMO-NSS30201MR6T1G

Bipolar Transistors - BJT 2A 30V Low VCEsat
PGA411QPAPRQ1

Mfr.#: PGA411QPAPRQ1

OMO.#: OMO-PGA411QPAPRQ1

Sensor Interface PGA411-Q1 Evaluation Module
NVMFS5C670NLWFAFT1G

Mfr.#: NVMFS5C670NLWFAFT1G

OMO.#: OMO-NVMFS5C670NLWFAFT1G

MOSFET TRENCH 6 60V NFET
LM5022QDGSTQ1

Mfr.#: LM5022QDGSTQ1

OMO.#: OMO-LM5022QDGSTQ1

Switching Controllers 2.2MHz, 60V Low Side Controller
TL331QDBVRQ1

Mfr.#: TL331QDBVRQ1

OMO.#: OMO-TL331QDBVRQ1-TEXAS-INSTRUMENTS

Analog Comparators AC Sgl Diff Comp- arato
LM5022QDGSTQ1

Mfr.#: LM5022QDGSTQ1

OMO.#: OMO-LM5022QDGSTQ1-TEXAS-INSTRUMENTS

Switching Controllers 2.2MHz, 60V Low Side Controlle
TLV3201AQDCKRQ1

Mfr.#: TLV3201AQDCKRQ1

OMO.#: OMO-TLV3201AQDCKRQ1-TEXAS-INSTRUMENTS

IC COMPARATOR PUSH PULL SC70-5
CGA3E1X7S1C225K080AE

Mfr.#: CGA3E1X7S1C225K080AE

OMO.#: OMO-CGA3E1X7S1C225K080AE-TDK

MULTILAYER CERAMIC CHIP CAPACITORS
Disponibilità
Azione:
897
Su ordine:
2880
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