We guarantee 100% customer satisfaction.
Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.
we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.
Email: [email protected]
| Parte # | Mfg. | Descrizione | Azione | Prezzo |
|---|---|---|---|---|
| IPB26CN10NGATMA1 DISTI # IPB26CN10NGATMA1TR-ND | Infineon Technologies AG | MOSFET N-CH 100V 35A TO263-3 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR) | Limited Supply - Call | |
| IPB26CN10N DISTI # IPB26CN10N | Infineon Technologies AG | - Bulk (Alt: IPB26CN10N) RoHS: Not Compliant Min Qty: 834 Container: Bulk | Americas - 0 |
|
| IPB26CN10NGATMA1 DISTI # IPB26CN10NGATMA1 | Infineon Technologies AG | Trans MOSFET N-CH 100V 35A 3-Pin TO-263 T/R - Bulk (Alt: IPB26CN10NGATMA1) Min Qty: 642 Container: Bulk | Americas - 0 |
|
| IPB26CN10NGATMA1 DISTI # SP000277692 | Infineon Technologies AG | Trans MOSFET N-CH 100V 35A 3-Pin TO-263 T/R (Alt: SP000277692) RoHS: Compliant Min Qty: 1 Container: Tape and Reel | Europe - 0 |
|
| IPB26CN10N G DISTI # 726-IPB26CN10NG | Infineon Technologies AG | MOSFET N-Ch 100V 35A D2PAK-2 RoHS: Compliant | 0 | |
| IPB26CN10NGATMA1 | Infineon Technologies AG | Power Field-Effect Transistor, 35A I(D), 100V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Not Compliant | 15000 |
|
| IPB26CN10N | Infineon Technologies AG | RoHS: Not Compliant | 82 |
|
| Immagine | Parte # | Descrizione |
|---|---|---|
|
Mfr.#: IPB240N04S41R0ATMA1 OMO.#: OMO-IPB240N04S41R0ATMA1 |
MOSFET N-CHANNEL_30/40V |
|
Mfr.#: IPB200N25N3 G OMO.#: OMO-IPB200N25N3-G |
MOSFET N-Ch 250V 64A D2PAK-2 OptiMOS 3 |
|
Mfr.#: IPB200N25N3G OMO.#: OMO-IPB200N25N3G-1190 |
POWER FIELD-EFFECT TRANSISTOR, 64A I(D), 250V, 0.02OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-263AB |
|
|
Mfr.#: IPB200N15N3G 200N15N |
Nuovo e originale |
|
|
Mfr.#: IPB230N06L3 OMO.#: OMO-IPB230N06L3-1190 |
Nuovo e originale |
|
|
Mfr.#: IPB240N03S4L-R8 OMO.#: OMO-IPB240N03S4L-R8-1190 |
Nuovo e originale |
|
|
Mfr.#: IPB260N06N3G OMO.#: OMO-IPB260N06N3G-1190 |
Power Field-Effect Transistor, 27A I(D), 60V, 0.0257ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |
|
|
Mfr.#: IPB26CN10NG,26CN10N OMO.#: OMO-IPB26CN10NG-26CN10N-1190 |
Nuovo e originale |
|
Mfr.#: IPB26CNE8N G |
MOSFET N-CH 85V 35A TO263-3 |
|
|
Mfr.#: IPB230N06L3 G OMO.#: OMO-IPB230N06L3-G-126 |
IGBT Transistors MOSFET N-Ch 200V 30A D2PAK-2 |