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If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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| Parte # | Mfg. | Descrizione | Azione | Prezzo |
|---|---|---|---|---|
| IPB230N06L3GATMA1 DISTI # IPB230N06L3GATMA1TR-ND | Infineon Technologies AG | MOSFET N-CH 60V 30A TO263-3 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR) | Limited Supply - Call | |
| IPB230N06L3GATMA1 DISTI # IPB230N06L3GATMA1CT-ND | Infineon Technologies AG | MOSFET N-CH 60V 30A TO263-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | Limited Supply - Call | |
| IPB230N06L3GATMA1 DISTI # IPB230N06L3GATMA1DKR-ND | Infineon Technologies AG | MOSFET N-CH 60V 30A TO263-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | Limited Supply - Call | |
| IPB230N06L3 G DISTI # 726-IPB230N06L3G | Infineon Technologies AG | MOSFET N-Ch 200V 30A D2PAK-2 RoHS: Compliant | 0 | |
| IPB230N06L3G | Infineon Technologies AG | Power Field-Effect Transistor, 30A I(D), 60V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Compliant | 1943 |
|
| IPB230N06L3 G | Infineon Technologies AG | 408 |
| Immagine | Parte # | Descrizione |
|---|---|---|
|
Mfr.#: IPB230N06L3 OMO.#: OMO-IPB230N06L3-1190 |
Nuovo e originale |
|
|
Mfr.#: IPB230N06L3G OMO.#: OMO-IPB230N06L3G-1190 |
Power Field-Effect Transistor, 30A I(D), 60V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |
|
Mfr.#: IPB230N06L3GATMA1 |
MOSFET N-CH 60V 30A TO263-3 |
|
|
Mfr.#: IPB230N06L3 G OMO.#: OMO-IPB230N06L3-G-126 |
IGBT Transistors MOSFET N-Ch 200V 30A D2PAK-2 |