SIS606BDN-T1-GE3

Mfr. #:: SIS606BDN-T1-GE3
Produttore:: Vishay / Siliconix
Descrizione:: MOSFET 100V Vds 20V Vgs PowerPAK 1212-8
Ciclo vitale:: Nuovo da questo produttore.
Scheda dati:: SIS606BDN-T1-GE3 Scheda dati
Consegna:: DHL FedEx Ups TNT EMS
Pagamento:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: SIS606BDN-T1-GE3 Datasheet SIS606BDN-T1-GE3 Datasheet (P4-P6)SIS606BDN-T1-GE3 Datasheet (P7)
ECAD Model:
Maggiori informazioni:: SIS606BDN-T1-GE3 maggiori informazioni

Attributo del prodotto
Valore attributo

Produttore:: Vishay

Categoria di prodotto:: MOSFET

RoHS:: Y

Tecnologia:: si

Stile di montaggio:: SMD/SMT

Pacchetto/custodia:: PowerPAK-1212-8

Numero di canali:: 1 Channel

Polarità del transistor:: Canale N

Vds - Tensione di rottura Drain-Source:: 100 V

Id - Corrente di scarico continua:: 35.3 A

Rds On - Resistenza Drain-Source:: 14.5 mOhms

Vgs th - Tensione di soglia gate-source:: 2 V

Vgs - Tensione Gate-Source:: 10 V

Qg - Carica cancello:: 20 nC

Temperatura di esercizio minima:: - 55 C

Temperatura massima di esercizio:: + 150 C

Pd - Dissipazione di potenza:: 52 W

Configurazione:: Separare

Modalità canale:: Aumento

Nome depositato:: TrenchFET, PowerPAK

Confezione:: Bobina

Serie:: SIS

Tipo di transistor:: 1 N-Channel

Marca:: Vishay / Siliconix

Tempo di caduta:: 5 ns

Tipologia di prodotto:: MOSFET

Ora di alzarsi:: 5 ns

Quantità confezione di fabbrica:: 3000

sottocategoria:: MOSFET

Tempo di ritardo allo spegnimento tipico:: 19 ns

Tempo di ritardo di accensione tipico:: 12 ns

Tags: SIS60, SIS6, SIS

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SIS606BDN-T1-GE3 Descrizione

***ow.cn: Trans MOSFET N-CH 100V 9.4A 8-Pin PowerPAK 1212 EP T/R

***nell: MOSFET, N-CH, 100V, 35.3A, POWERPAK SO

***ark: Mosfet, N-Ch, 100V, 35.3A, Powerpak So; Transistor Polarity:n Channel; Continuous Drain Current Id:35.3A; Drain Source Voltage Vds:100V; On Resistance Rds(On):0.0145Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Rohs Compliant: Yes

SIS606BDN-T1-GE3 Maggiori informazioni

Industrial Power Solution: Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors.

TrenchFET Gen IV MOSFETs: Vishay / Siliconix TrenchFET® Gen IV MOSFETs are next-generation TrenchFET® family of power MOSFETs. These new devices utilize a new high-density design and the SiR182DP, SiR186DP, and SiSS26DN. The TrenchFET Gen IV MOSFETs offer industry-low on-resistance and low total gate charge in the PowerPAK® SO-8 and 1212-8S packages. These TrenchFET Gen IV MOSFETs feature extremely low RDS(on) that translates to lower conduction losses for reduced power consumption. The TrenchFET MOSFETs also come with space-saving PowerPAK® 1212-8 packages with similar efficiency with a third of its size. Typical applications include high power DC/DC converters, synchronous rectification, solar micro-inverters, and motor drive switch.

Market price

Parte #	Mfg.	Descrizione	Azione	Prezzo
SIS606BDN-T1-GE3 DISTI # V72:2272_21388922	Vishay Intertechnologies	SIS606BDN-T1-GE3	5900	75000:$0.5823 30000:$0.5904 15000:$0.5985 6000:$0.6066 3000:$0.6147 1000:$0.6228 500:$0.7966 250:$0.8987 100:$0.9453 50:$0.9791 25:$1.0879 10:$1.2088 1:$1.6325
SIS606BDN-T1-GE3 DISTI # V99:2348_21388922	Vishay Intertechnologies	SIS606BDN-T1-GE3	0	3000000:$0.6303 600000:$0.6311 60000:$0.6320 6000:$0.6321
SIS606BDN-T1-GE3 DISTI # V36:1790_21388922	Vishay Intertechnologies	SIS606BDN-T1-GE3	0	6000000:$0.5863 3000000:$0.5865 600000:$0.6021 60000:$0.6279 6000:$0.6321
SIS606BDN-T1-GE3 DISTI # SIS606BDN-T1-GE3TR-ND	Vishay Siliconix	MOSFET N-CHAN 100V POWERPAK 1212 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	6000In Stock	15000:$0.5779 6000:$0.6005 3000:$0.6321
SIS606BDN-T1-GE3 DISTI # SIS606BDN-T1-GE3CT-ND	Vishay Siliconix	MOSFET N-CHAN 100V POWERPAK 1212 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	6000In Stock	1000:$0.6976 500:$0.8836 100:$1.0696 10:$1.3720 1:$1.5300
SIS606BDN-T1-GE3 DISTI # SIS606BDN-T1-GE3DKR-ND	Vishay Siliconix	MOSFET N-CHAN 100V POWERPAK 1212 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	6000In Stock	1000:$0.6976 500:$0.8836 100:$1.0696 10:$1.3720 1:$1.5300
SIS606BDN-T1-GE3 DISTI # 33136746	Vishay Intertechnologies	SIS606BDN-T1-GE3	5900	15000:$0.5985 6000:$0.6066 3000:$0.6147 1000:$0.6228 500:$0.7966 250:$0.8987 100:$0.9453 50:$0.9791 25:$1.0879 11:$1.2088
SIS606BDN-T1-GE3 DISTI # SIS606BDN-T1-GE3	Vishay Intertechnologies	(Alt: SIS606BDN-T1-GE3) RoHS: Compliant Min Qty: 6000	Asia - 0
SIS606BDN-T1-GE3 DISTI # SIS606BDN-T1-GE3	Vishay Intertechnologies	- Tape and Reel (Alt: SIS606BDN-T1-GE3) RoHS: Compliant Min Qty: 6000 Container: Reel	Americas - 0	60000:$0.5509 30000:$0.5659 18000:$0.5819 12000:$0.6069 6000:$0.6249
SIS606BDN-T1-GE3 DISTI # SIS606BDN-T1-GE3	Vishay Intertechnologies	(Alt: SIS606BDN-T1-GE3) RoHS: Compliant Min Qty: 1	Europe - 0	1000:€0.5999 500:€0.6069 100:€0.6179 50:€0.6269 25:€0.7089 10:€0.8739 1:€1.2179
SIS606BDN-T1-GE3 DISTI # 59AC7462	Vishay Intertechnologies	N-CHANNEL 100-V (D-S) MOSFET	0	10000:$0.5470 6000:$0.5590 4000:$0.5810 2000:$0.6450 1000:$0.7100 1:$0.7400
SIS606BDN-T1-GE3 DISTI # 78-SIS606BDN-T1-GE3	Vishay Intertechnologies	MOSFET 100V Vds 20V Vgs PowerPAK 1212-8 RoHS: Compliant	0	1:$1.5000 10:$1.2300 100:$0.9500 500:$0.8170 1000:$0.6440 3000:$0.6010 6000:$0.5710 9000:$0.5500
SIS606BDN-T1-GE3 DISTI # 2846620	Vishay Intertechnologies	MOSFET, N-CH, 100V, 35.3A, POWERPAK SO	0	500:£0.6240 250:£0.6750 100:£0.7260 10:£0.9870 1:£1.3000
SIS606BDN-T1-GE3 DISTI # 2846620	Vishay Intertechnologies	MOSFET, N-CH, 100V, 35.3A, POWERPAK SO RoHS: Compliant	0	1000:$1.0600 500:$1.3400 100:$1.6200 5:$2.0700

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Disponibilità

Azione:: 11
Su ordine:: 1994
Inserisci la quantità:

Il prezzo attuale di SIS606BDN-T1-GE3 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]

Prezzo di riferimento (USD)

Quantità
Prezzo unitario
est. Prezzo

1: ~~1,50 USD~~; ~~1,50 USD~~

10: ~~1,23 USD~~; ~~12,30 USD~~

100: ~~0,95 USD~~; ~~95,00 USD~~

500: ~~0,82 USD~~; ~~408,50 USD~~

1000: ~~0,64 USD~~; ~~644,00 USD~~

Iniziare con

SIS60 3
SIS6 120
SIS 843

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SIS606BDN-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes