ZXMN3F31DN8TA

ZXMN3F31DN8TA
Mfr. #:
ZXMN3F31DN8TA
Produttore:
Diodes Incorporated
Descrizione:
IGBT Transistors MOSFET 30V Dual N-channel Enhance. Mode MOSFET
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
ZXMN3F31DN8TA Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
ZXMN3F31DN8TA maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore
Diodi incorporati
categoria di prodotto
Chip IC
Serie
ZXMN3
Confezione
Imballaggio alternativo Digi-ReelR
Unità di peso
0.002610 oz
Stile di montaggio
SMD/SMT
Pacchetto-Custodia
8-SOIC (0.154", 3.90mm Width)
Tecnologia
si
Temperatura di esercizio
-55°C ~ 150°C (TJ)
Tipo di montaggio
Montaggio superficiale
Numero di canali
2 Channel
Pacchetto-dispositivo-fornitore
8-SO
Configurazione
Dual
Tipo FET
2 N-Channel (Dual)
Potenza-Max
1.8W
Tipo a transistor
2 N-Channel
Drain-to-Source-Voltage-Vdss
30V
Ingresso-Capacità-Ciss-Vds
608pF @ 15V
Funzione FET
Porta livello logico
Corrente-Continuo-Scarico-Id-25°C
5.7A
Rds-On-Max-Id-Vgs
24 mOhm @ 7A, 10V
Vgs-th-Max-Id
3V @ 250μA
Gate-Carica-Qg-Vgs
12.9nC @ 10V
Pd-Power-Dissipazione
2.1 W
Massima temperatura di esercizio
+ 150 C
Temperatura di esercizio minima
- 55 C
Tempo di caduta
8 ns
Ora di alzarsi
3.3 ns
Vgs-Gate-Source-Voltage
20 V
Id-Continuo-Scarico-Corrente
7.3 A
Vds-Drain-Source-Breakdown-Voltage
30 V
Rds-On-Drain-Source-Resistenza
24 mOhms
Polarità del transistor
Canale N
Tempo di ritardo allo spegnimento tipico
16 ns
Tempo di ritardo all'accensione tipico
2.9 ns
Modalità canale
Aumento
Tags
ZXMN3F31, ZXMN3F, ZXMN3, ZXMN, ZXM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Power MOSFETs
Diodes Inc. continues to expand its portfolio of power MOSFETs with new N- and P-channel devices with breakdown voltages up to 450V and a wide range of package options. The Diodes Inc. MOSFET portfolio is ideally suited to a range of applications, including DC-DC conversion, load switching, motor control, backlighting, battery protection, battery chargers, audio circuits, and automotive.
ZXMN2x & ZXMN3x MOSFETs
Diodes Incorporated ZXMN2x and ZXMN3x MOSFETs are offered in is offered in compact S0-8 and  SOT23 packages. These MOSFETs are ideal for a range of space-starved switching and power management applications, such as external switches in buck/boost PoL converters, in which PCB footprint, thermal performance, and low threshold voltage are highly important.
Parte # Mfg. Descrizione Azione Prezzo
ZXMN3F31DN8TA
DISTI # V72:2272_06708095
Zetex / Diodes IncTrans MOSFET N-CH 30V 7.3A Automotive 8-Pin SO T/R
RoHS: Compliant
500
  • 500:$0.4351
  • 250:$0.4352
  • 100:$0.4353
  • 25:$0.6671
  • 10:$0.6674
  • 1:$0.8072
ZXMN3F31DN8TA
DISTI # 1034-ZXMN3F31DN8CT-ND
Diodes IncorporatedMOSFET 2N-CH 30V 5.7A 8SOIC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
1488In Stock
  • 100:$0.6306
  • 10:$0.8230
  • 1:$0.9300
ZXMN3F31DN8TA
DISTI # 1034-ZXMN3F31DN8DKR-ND
Diodes IncorporatedMOSFET 2N-CH 30V 5.7A 8SOIC
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
1488In Stock
  • 100:$0.6306
  • 10:$0.8230
  • 1:$0.9300
ZXMN3F31DN8TA
DISTI # 1034-ZXMN3F31DN8TR-ND
Diodes IncorporatedMOSFET 2N-CH 30V 5.7A 8SOIC
RoHS: Compliant
Min Qty: 500
Container: Tape & Reel (TR)
1000In Stock
  • 500:$0.4840
ZXMN3F31DN8TA
DISTI # ZXMN3F31DN8CT-ND
Diodes IncorporatedMOSFET 2N-CH 30V 5.7A 8SOIC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
942In Stock
  • 100:$0.6730
  • 10:$0.8720
  • 1:$1.0000
ZXMN3F31DN8TA
DISTI # ZXMN3F31DN8DKR-ND
Diodes IncorporatedMOSFET 2N-CH 30V 5.7A 8SOIC
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
942In Stock
  • 100:$0.6730
  • 10:$0.8720
  • 1:$1.0000
ZXMN3F31DN8TA
DISTI # ZXMN3F31DN8TR-ND
Diodes IncorporatedMOSFET 2N-CH 30V 5.7A 8SOIC
RoHS: Compliant
Min Qty: 500
Container: Tape & Reel (TR)
500In Stock
  • 500:$0.4840
ZXMN3F31DN8TA
DISTI # 25757541
Zetex / Diodes IncTrans MOSFET N-CH 30V 7.3A Automotive 8-Pin SO T/R
RoHS: Compliant
500
  • 500:$0.4351
  • 250:$0.4352
  • 100:$0.4353
  • 25:$0.6671
  • 23:$0.6674
ZXMN3F31DN8TA
DISTI # ZXMN3F31DN8TA
Diodes IncorporatedTrans MOSFET N-CH 30V 7.3A 8-Pin SO T/R - Tape and Reel (Alt: ZXMN3F31DN8TA)
RoHS: Compliant
Min Qty: 500
Container: Reel
Americas - 0
  • 500:$0.3309
  • 1000:$0.3149
  • 2000:$0.2999
  • 3000:$0.2869
  • 5000:$0.2799
ZXMN3F31DN8TA
DISTI # ZXMN3F31DN8TA
Diodes IncorporatedTrans MOSFET N-CH 30V 7.3A 8-Pin SO T/R (Alt: ZXMN3F31DN8TA)
RoHS: Compliant
Min Qty: 500
Container: Tape and Reel
Europe - 0
  • 500:€0.3279
  • 1000:€0.3119
  • 2000:€0.3069
  • 3000:€0.3019
  • 5000:€0.2889
ZXMN3F31DN8TA
DISTI # 522-ZXMN3F31DN8TA
Diodes IncorporatedMOSFET 30V Dual N-channel Enhance. Mode MOSFET
RoHS: Compliant
1220
  • 1:$0.8200
  • 10:$0.6820
  • 100:$0.4400
  • 500:$0.4400
  • 1000:$0.3520
ZXMN3F31DN8TAZetex / Diodes Inc 81621
    Immagine Parte # Descrizione
    ZXMN3F31DN8TA

    Mfr.#: ZXMN3F31DN8TA

    OMO.#: OMO-ZXMN3F31DN8TA

    MOSFET 30V Dual N-channel Enhance. Mode MOSFET
    ZXMN3F30FGTA

    Mfr.#: ZXMN3F30FGTA

    OMO.#: OMO-ZXMN3F30FGTA-1190

    DIIZXMN3F30FGTA (Alt: ZXMN3F30FGTA)
    ZXMN3F318DN8TA

    Mfr.#: ZXMN3F318DN8TA

    OMO.#: OMO-ZXMN3F318DN8TA-1190

    Nuovo e originale
    ZXMN3F31DN8TC

    Mfr.#: ZXMN3F31DN8TC

    OMO.#: OMO-ZXMN3F31DN8TC-1190

    Nuovo e originale
    ZXMN3F30FHTA-CUT TAPE

    Mfr.#: ZXMN3F30FHTA-CUT TAPE

    OMO.#: OMO-ZXMN3F30FHTA-CUT-TAPE-1190

    Nuovo e originale
    ZXMN3F31DN8TA

    Mfr.#: ZXMN3F31DN8TA

    OMO.#: OMO-ZXMN3F31DN8TA-DIODES

    IGBT Transistors MOSFET 30V Dual N-channel Enhance. Mode MOSFET
    ZXMN3F30FHTA

    Mfr.#: ZXMN3F30FHTA

    OMO.#: OMO-ZXMN3F30FHTA-DIODES

    IGBT Transistors MOSFET 30V N-Channel Enhance. Mode MOSFET
    Disponibilità
    Azione:
    Available
    Su ordine:
    1000
    Inserisci la quantità:
    Il prezzo attuale di ZXMN3F31DN8TA è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
    Prezzo di riferimento (USD)
    Quantità
    Prezzo unitario
    est. Prezzo
    1
    0,40 USD
    0,40 USD
    10
    0,38 USD
    3,80 USD
    100
    0,36 USD
    35,99 USD
    500
    0,34 USD
    169,95 USD
    1000
    0,32 USD
    319,90 USD
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