ZXMN3F30FHTA

Mfr. #:: ZXMN3F30FHTA
Produttore:: Diodes Incorporated
Descrizione:: IGBT Transistors MOSFET 30V N-Channel Enhance. Mode MOSFET
Ciclo vitale:: Nuovo da questo produttore.
Scheda dati:: ZXMN3F30FHTA Scheda dati
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HTML Datasheet:: ZXMN3F30FHTA Datasheet ZXMN3F30FHTA Datasheet (P4-P6)ZXMN3F30FHTA Datasheet (P7-P8)
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Attributo del prodotto
Valore attributo

Produttore: Diodi incorporati

categoria di prodotto: FET - Single

Serie: ZXMN2F30

Confezione: Imballaggio alternativo Digi-ReelR

Unità di peso: 0.000282 oz

Stile di montaggio: SMD/SMT

Pacchetto-Custodia: TO-236-3, SC-59, SOT-23-3

Tecnologia: si

Temperatura di esercizio: -55°C ~ 150°C (TJ)

Tipo di montaggio: Montaggio superficiale

Numero di canali: 1 Channel

Pacchetto-dispositivo-fornitore: SOT-23-3

Configurazione: Separare

Tipo FET: MOSFET N-Channel, ossido di metallo

Potenza-Max: 950mW

Tipo a transistor: 1 N-Channel

Drain-to-Source-Voltage-Vdss: 30V

Ingresso-Capacità-Ciss-Vds: 318pF @ 15V

Funzione FET: Logic Level Gate, 4.5V Drive

Corrente-Continuo-Scarico-Id-25°C: 3.8A (Ta)

Rds-On-Max-Id-Vgs: 47 mOhm @ 3.2A, 10V

Vgs-th-Max-Id: 3V @ 250μA

Gate-Carica-Qg-Vgs: 7.7nC @ 10V

Pd-Power-Dissipazione: 1.4 W

Massima temperatura di esercizio: + 150 C

Temperatura di esercizio minima: - 55 C

Tempo di caduta: 2.6 ns

Ora di alzarsi: 2.6 ns

Vgs-Gate-Source-Voltage: 20 V

Id-Continuo-Scarico-Corrente: 4.6 A

Vds-Drain-Source-Breakdown-Voltage: 30 V

Rds-On-Drain-Source-Resistenza: 47 mOhms

Polarità del transistor: Canale N

Tempo di ritardo allo spegnimento tipico: 17 ns

Tempo di ritardo all'accensione tipico: 1.6 ns

Modalità canale: Aumento

Tags: ZXMN3F30, ZXMN3F, ZXMN3, ZXMN, ZXM

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

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ZXMN3F30FHTA Descrizione

***ure Electronics: ZXMN3F30 Series 30 V 0.047 Ohm N-Channel Enhancement Mode MOSFET - SOT-23

***et: Trans MOSFET N-CH 30V 4.6A 3-Pin SOT-23 T/R

***ment14 APAC: MOSFET, N, SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:4.6A; Drain Source Voltage Vds:30V; On Resistance Rds(on):47mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:1.4W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:4.6A; On State Resistance @ Vgs = 4.5V:65mohm; On State resistance @ Vgs = 10V:47mohm; Package / Case:SOT-23; Power Dissipation Pd:1.4W; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Min:1V

***(Formerly Allied Electronics): SI2366DS-T1-GE3 N-channel MOSFET Transistor; 5.8 A; 30 V; 3-Pin SOT-23

***enic: 30V 5.8A 2.1W 36m´Î@10V4.5A 2.5V@250Ã×A N Channel SOT-23(SOT-23-3) MOSFETs ROHS

***nell: MOSFET, N CH, W/D, 30V, 5.8A, SOT23; Transistor Polarity:N Channel; Continuous Drain Current Id:5.8A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.03ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:2.1W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOT-23; No. of Pins:3; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C

***ure Electronics: N-Channel 30 V 28 mOhm Surface Mount Enhancement Mode Mosfet - SOT-23-3

***ical: Trans MOSFET N-CH 30V 5.8A Automotive 3-Pin SOT-23 T/R

***ment14 APAC: MOSFET,N CH,30V,5.8A,SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:4.2A; Source Voltage Vds:30V; On Resistance

***nell: MOSFET,N CH,30V,5.8A,SOT-23; Transistor Polarity: N Channel; Continuous Drain Current Id: 4.2A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.024ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.5V; Power Dissipation Pd: 1.4W; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019); Current Id Max: 5.8A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Voltage Vgs Max: 20V

***ure Electronics: P Channel 30 V 90 mO 1.36 W 8.2 nC Surface Mount Power MosFet - SOT-23

***ical: Trans MOSFET P-CH 30V 3.8A Automotive 3-Pin SOT-23 T/R

***ment14 APAC: MOSFET, P CH, -30V, -2.5A, 0.76W; Transistor Polarity:P Channel; Continuous Drain Current Id:-2.5A; Source Voltage Vds:-30V; On Resistance

***nell: MOSFET, P CH, -30V, -2.5A, 0.76W; Transistor Polarity: P Channel; Continuous Drain Current Id: -2.5A; Drain Source Voltage Vds: -30V; On Resistance Rds(on): 0.07ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -3V; Power Dissipation Pd: 760mW; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)

***ure Electronics: Si2336DS Series N-Channel 30 V 42 mOhm 1.25 W Surface Mount Mosfet - TO-236

***nsix Microsemi: Small Signal Field-Effect Transistor, 5.2A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236

***ment14 APAC: MOSFET,N CH,30V,5.2A,DIODE,SOT23; Transistor Polarity:N Channel; Continuous Drain Current Id:5.2A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.034ohm; Rds(on) Test Voltage Vgs:4.5V; Power Dissipation Pd:1.25W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:4.3A; Power Dissipation Pd:1.25W; Voltage Vgs Max:8V

***p One Stop Global: Trans MOSFET N-CH 30V 3.3A Automotive 3-Pin SOT-23 T/R

***ark: Mosfet, N-Ch, 30V, 2.5A, Sot-23 Rohs Compliant: Yes

***(Formerly Allied Electronics): N-Channel Enhancement MOSFET SOT-23

***des Inc SCT: N-CHANNEL ENHANCEMENT MODE MOSFET, 30V VDS, 20±V VGS

***ment14 APAC: MOSFET, N-CH, 30V, 2.5A, SOT-23;

*** Stop Electro: Small Signal Field-Effect Transistor, 2.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

***ical: Trans MOSFET N-CH 30V 4.2A 3-Pin SOT-23 T/R

***S: French Electronic Distributor since 1988

***ment14 APAC: MOSFET,N CH,30V,4.9A,DIODE,SOT23; Transistor Polarity:N Channel; Continuous Drain Current Id:4.9A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.035ohm; Rds(on) Test Voltage Vgs:4.5V; Power Dissipation Pd:1.3W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:4.2A; Power Dissipation Pd:1.3W; Voltage Vgs Max:8V

Market price

Parte #	Mfg.	Descrizione	Azione	Prezzo
ZXMN3F30FHTA DISTI # 26572882	Zetex / Diodes Inc	Trans MOSFET N-CH 30V 4.6A Automotive 3-Pin SOT-23 T/R RoHS: Compliant	288000	3000:$0.1038
ZXMN3F30FHTA DISTI # ZXMN3F30FHCT-ND	Diodes Incorporated	MOSFET N-CH 30V 3.8A SOT23-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	14961In Stock	1000:$0.2070 500:$0.2620 100:$0.3500 10:$0.4600 1:$0.5400
ZXMN3F30FHTA DISTI # ZXMN3F30FHDKR-ND	Diodes Incorporated	MOSFET N-CH 30V 3.8A SOT23-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	14961In Stock	1000:$0.2070 500:$0.2620 100:$0.3500 10:$0.4600 1:$0.5400
ZXMN3F30FHTA DISTI # ZXMN3F30FHTR-ND	Diodes Incorporated	MOSFET N-CH 30V 3.8A SOT23-3 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	12000In Stock	3000:$0.1850
ZXMN3F30FHTA DISTI # ZXMN3F30FHTA	Diodes Incorporated	Trans MOSFET N-CH 30V 4.6A 3-Pin SOT-23 T/R (Alt: ZXMN3F30FHTA) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 12000	3000:€0.1139 6000:€0.1139 12000:€0.1139 18000:€0.1129 30000:€0.1129
ZXMN3F30FHTA DISTI # ZXMN3F30FHTA	Diodes Incorporated	Trans MOSFET N-CH 30V 4.6A 3-Pin SOT-23 T/R - Tape and Reel (Alt: ZXMN3F30FHTA) RoHS: Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$0.1249 6000:$0.1189 12000:$0.1129 18000:$0.1079 30000:$0.1059
ZXMN3F30FHTA DISTI # 08N2757	Diodes Incorporated	MOSFET, N CHANNEL, 30V, 4.6A, SOT-23,Transistor Polarity:N Channel,Continuous Drain Current Id:4.6A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.047ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1V RoHS Compliant: Yes	495	1000:$0.1660 500:$0.1820 250:$0.1980 100:$0.2140 50:$0.2600 25:$0.3050 10:$0.3510 1:$0.4300
ZXMN3F30FHTA DISTI # 70438832	Diodes Incorporated	MOSFET N-Channel 30V 4.6A SOT23 RoHS: Compliant	0	125:$0.2000 250:$0.1800 500:$0.1600 1250:$0.1400
ZXMN3F30FHTA DISTI # 522-ZXMN3F30FHTA	Diodes Incorporated	MOSFET 30V N-Channel Enhance. Mode MOSFET RoHS: Compliant	11244	1:$0.4200 10:$0.3510 100:$0.2140 1000:$0.1660 3000:$0.1410
ZXMN3F30FHTA	Diodes Incorporated	ZXMN3F30 Series 30 V 0.047 Ohm N-Channel Enhancement Mode MOSFET - SOT-23 RoHS: Compliant	188Cut Tape/Mini-Reel	1:$0.2550 100:$0.1790 250:$0.1660 500:$0.1570 1500:$0.1370
ZXMN3F30FHTA	Diodes Incorporated		400	397:$0.4036 100:$0.5045 1:$1.0090
ZXMN3F30FHTA DISTI # 7082539	Zetex / Diodes Inc	MOSFET N-CHANNEL 30V 4.6A SOT23, PK	1700	150:£0.1480 25:£0.2450
ZXMN3F30FHTA DISTI # 7082539P	Zetex / Diodes Inc	MOSFET N-CHANNEL 30V 4.6A SOT23, RL	5600	150:£0.1480
ZXMN3F30FHTA DISTI # ZXMN3F30FHTA	Diodes Incorporated	Transistor: N-MOSFET,unipolar,30V,3.7A,0.95W,SOT23	2509	3:$0.1994 25:$0.1801 100:$0.1586 500:$0.1427 3000:$0.1337
ZXMN3F30FHTA	Zetex / Diodes Inc	RoHS: Compliant	Europe - 1265
ZXMN3F30FHTA	Zetex / Diodes Inc		466
ZXMN3F30FHTA DISTI # XSKDRABS0027457	DIODES INCORPORATED	RoHS: Compliant	18000	18000:$0.1508 3000:$0.1616
ZXMN3F30FHTA DISTI # XSFP00000014209	Diodes Incorporated	Three Terminal VoltageReference,1Output,2.495V,Trim/Adjustable, BIPolar,PDSO3 RoHS: Compliant	9000	9000:$0.2582 3000:$0.2840
ZXMN3F30FHTA DISTI # 1583667	Diodes Incorporated	MOSFET, N, SOT-23 RoHS: Compliant	505	500:£0.1240 250:£0.1400 100:£0.1550 25:£0.2570 5:£0.3160
ZXMN3F30FHTA DISTI # 1583667	Diodes Incorporated	MOSFET, N, SOT-23 RoHS: Compliant	495	250:$0.2960 100:$0.3500 25:$0.4300 5:$0.4930

Prodotti correlati

Immagine	Parte #	Descrizione
	Mfr.#: ZXMN3F31DN8TA OMO.#: OMO-ZXMN3F31DN8TA	MOSFET 30V Dual N-channel Enhance. Mode MOSFET
	Mfr.#: ZXMN3F30FGTA OMO.#: OMO-ZXMN3F30FGTA-1190	DIIZXMN3F30FGTA (Alt: ZXMN3F30FGTA)
	Mfr.#: ZXMN3F318DN8TA OMO.#: OMO-ZXMN3F318DN8TA-1190	Nuovo e originale
	Mfr.#: ZXMN3F31DN8TC OMO.#: OMO-ZXMN3F31DN8TC-1190	Nuovo e originale
	Mfr.#: ZXMN3F30FHTA-CUT TAPE OMO.#: OMO-ZXMN3F30FHTA-CUT-TAPE-1190	Nuovo e originale
	Mfr.#: ZXMN3F31DN8TA OMO.#: OMO-ZXMN3F31DN8TA-DIODES	IGBT Transistors MOSFET 30V Dual N-channel Enhance. Mode MOSFET
	Mfr.#: ZXMN3F30FHTA OMO.#: OMO-ZXMN3F30FHTA-DIODES	IGBT Transistors MOSFET 30V N-Channel Enhance. Mode MOSFET

Disponibilità

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Su ordine:: 4000
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Il prezzo attuale di ZXMN3F30FHTA è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]

Prezzo di riferimento (USD)

Quantità
Prezzo unitario
est. Prezzo

1: ~~0,16 USD~~; ~~0,16 USD~~

10: ~~0,15 USD~~; ~~1,48 USD~~

100: ~~0,14 USD~~; ~~14,01 USD~~

500: ~~0,13 USD~~; ~~66,15 USD~~

1000: ~~0,12 USD~~; ~~124,60 USD~~

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ZXMN3F30FHTA

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes