STGW60V60DF

STGW60V60DF
Mfr. #:
STGW60V60DF
Produttore:
STMicroelectronics
Descrizione:
IGBT 600V 80A 375W TO247
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
STGW60V60DF Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
STGW60V60DF maggiori informazioni STGW60V60DF Product Details
Attributo del prodotto
Valore attributo
Produttore
ST
categoria di prodotto
IGBT - Singolo
Serie
600-650V IGBTs
Confezione
Tubo
Unità di peso
0.229281 oz
Stile di montaggio
Foro passante
Pacchetto-Custodia
TO-247-3
Tipo di ingresso
Standard
Tipo di montaggio
Foro passante
Pacchetto-dispositivo-fornitore
TO-247
Configurazione
Separare
Potenza-Max
375W
Reverse-Tempo di ripristino-trr
74ns
Corrente-Collettore-Ic-Max
80A
Tensione-Collettore-Emettitore-Ripartizione-Max
600V
Tipo IGBT
Sosta sul campo di trincea
Corrente-Collettore-Impulsato-Icm
240A
Vce-su-Max-Vge-Ic
2.3V @ 15V, 60A
Energia di commutazione
750μJ (on), 550μJ (off)
Gate-Charge
334nC
Td-on-off-25°C
60ns/208ns
Condizione di test
400V, 60A, 4.7 Ohm, 15V
Pd-Power-Dissipazione
375 W
Massima temperatura di esercizio
+ 175 C
Temperatura di esercizio minima
- 55 C
Collettore-Emettitore-Tensione-VCEO-Max
600 V
Collettore-Emettitore-Saturazione-Tensione
2.35 V
Continuo-Collettore-Corrente-a-25-C
80 A
Gate-Emettitore-Corrente di dispersione
250 nA
Massima-tensione-gate-emettitore
20 V
Tags
STGW60V60D, STGW60V, STGW6, STGW, STG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
In a Pack of 5, STMicroelectronics STGW60V60DF IGBT, 60 A 600 V, 3-Pin TO-247
***ical
Trans IGBT Chip N-CH 600V 120A 375000mW 3-Pin(3+Tab) TO-247 Tube
***ure Electronics
STGW Series Advanced Trench Gate Field Stop Through Hole IGBT - TO-247-2
***p One Stop Japan
Trans IGBT Chip N-CH 600V 120A 3-Pin(3+Tab) TO-247 Tube
***et Europe
Trans IGBT Chip N-CH 600V 80A 3-Pin TO-247
***ied Electronics & Automation
IGBT Trench gate,600V 60A/100 deg,TO247
***ronik
IGBT 600V 60A 1,85V TO247-3
***i-Key
IGBT 600V 80A 375W TO247
***et
STMICROELECTRONICS STGW60V60DF
***ukat
600V 80A 375W TO247
***ark
Igbt, Single, 600V, 80A, To-247-3; Dc Collector Current:80A; Collector Emitter Saturation Voltage Vce(On):1.85V; Power Dissipation Pd:375W; Collector Emitter Voltage V(Br)Ceo:600V; Transistor Case Style:to-247; No. Of Pins:3Pins; Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. IGBT, SINGLE, 600V, 80A, TO-247-3; DC Collector Current:80A; Collector Emitter Saturation Voltage Vce(on):1.85V; Power Dissipation Pd:375W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-247; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:V Series; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (17-Dec-2015)
***nell
IGBT, SINGOLO, 600V, 80A, TO-247-3; Corrente di Collettore CC:80A; Tensione Saturaz Collettore-Emettitore Vce(on):1.85V; Dissipazione di Potenza Pd:375W; Tensione Collettore-Emettitore V(br)ceo:600V; Modello Case Transistor:TO-247; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:V Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):-; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (17-Dec-2015)
IGBT V Series
STMicroelectronics 600V trench-gate field-stop very high speed IGBT V series feature the industry's lowest Eoff. Combined with a saturation voltage as low as 1.8V and a maximum operating junction temperature of 175°C, they enable increased system efficiency, higher switching frequencies (up to 120kHz) and simplified thermal and EMI design.
Parte # Mfg. Descrizione Azione Prezzo
STGW60V60DF
DISTI # V99:2348_18459453
STMicroelectronicsTrans IGBT Chip N-CH 600V 120A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant
0
    STGW60V60DF
    DISTI # V36:1790_06560785
    STMicroelectronicsTrans IGBT Chip N-CH 600V 120A 3-Pin(3+Tab) TO-247 Tube
    RoHS: Compliant
    0
      STGW60V60DF
      DISTI # 497-13768-5-ND
      STMicroelectronicsIGBT 600V 80A 375W TO247
      RoHS: Compliant
      Min Qty: 1
      Container: Tube
      On Order
      • 2520:$3.3264
      • 510:$4.1414
      • 120:$4.8648
      • 30:$5.6133
      • 10:$5.9380
      • 1:$6.6100
      STGW60V60DF
      DISTI # STGW60V60DF
      STMicroelectronicsTrans IGBT Chip N-CH 600V 80A 3-Pin TO-247 (Alt: STGW60V60DF)
      RoHS: Compliant
      Min Qty: 1
      Europe - 0
      • 1000:€3.1800
      • 500:€3.2400
      • 250:€3.6100
      • 100:€3.7900
      • 10:€4.3900
      • 1:€5.1500
      STGW60V60DF
      DISTI # STGW60V60DF
      STMicroelectronicsTrans IGBT Chip N-CH 600V 80A 3-Pin TO-247 (Alt: STGW60V60DF)
      RoHS: Compliant
      Min Qty: 600
      Asia - 0
      • 30000:$1.7763
      • 15000:$1.8243
      • 6000:$1.8750
      • 3000:$1.9565
      • 1800:$2.0455
      • 1200:$2.1429
      • 600:$2.2500
      STGW60V60DF
      DISTI # STGW60V60DF
      STMicroelectronicsTrans IGBT Chip N-CH 600V 80A 3-Pin TO-247 - Rail/Tube (Alt: STGW60V60DF)
      RoHS: Compliant
      Min Qty: 600
      Container: Tube
      Americas - 0
      • 3600:$2.9900
      • 6000:$2.9900
      • 2400:$3.1900
      • 1200:$3.2900
      • 600:$3.4900
      STGW60V60DF
      DISTI # 98Y2477
      STMicroelectronicsTrans IGBT Chip N-CH 600V 80A 3-Pin TO-247 - Bulk (Alt: 98Y2477)
      RoHS: Compliant
      Min Qty: 1
      Container: Bulk
      Americas - 0
      • 500:$4.4800
      • 250:$4.9400
      • 100:$5.1800
      • 50:$5.4200
      • 25:$5.6500
      • 10:$5.8900
      • 1:$6.8400
      STGW60V60DF
      DISTI # 98Y2477
      STMicroelectronicsIGBT, SINGLE, 600V, 80A, TO-247-3,DC Collector Current:80A,Collector Emitter Saturation Voltage Vce(on):1.85V,Power Dissipation Pd:375W,Collector Emitter Voltage V(br)ceo:600V,Transistor Case Style:TO-247,No. of Pins:3Pins,RoHS Compliant: Yes16
      • 1:$2.2400
      • 10:$2.2400
      • 25:$2.2400
      • 50:$2.2400
      • 100:$2.2400
      • 250:$2.2400
      • 500:$2.2400
      STGW60V60DF
      DISTI # 511-STGW60V60DF
      STMicroelectronicsIGBT Transistors 600V 60A High Speed Trench Gate IGBT
      RoHS: Compliant
      0
      • 1:$6.2900
      • 10:$5.3400
      • 100:$4.6300
      • 250:$4.3900
      • 500:$3.9400
      • 1000:$3.3200
      • 2500:$3.1600
      STGW60V60DF
      DISTI # 7917643P
      STMicroelectronicsIGBT TRENCH GATE 600V 60A/100 DEG TO247, TU155
      • 600:£2.8620
      • 300:£3.1840
      • 150:£3.3520
      • 50:£3.8720
      STGW60V60DF
      DISTI # 7917643
      STMicroelectronicsIGBT TRENCH GATE 600V 60A/100 DEG TO247, PK45
      • 600:£2.8620
      • 300:£3.1840
      • 150:£3.3520
      • 50:£3.8720
      • 5:£4.6400
      STGW60V60DF
      DISTI # 2629741
      STMicroelectronicsIGBT, SINGLE, 600V, 80A, TO-247-3
      RoHS: Compliant
      0
      • 1020:$5.3000
      • 510:$6.2800
      • 120:$7.3800
      • 30:$8.5100
      • 1:$10.0200
      STGW60V60DF
      DISTI # 2629741
      STMicroelectronicsIGBT, SINGLE, 600V, 80A, TO-247-30
      • 500:£3.0700
      • 250:£3.4300
      • 100:£3.6100
      • 10:£4.1600
      • 1:£5.4000
      STGW60V60DF
      DISTI # STGW60V60DF
      STMicroelectronics600V 80A 375W TO247
      RoHS: Not Compliant
      0
      • 5:€3.3000
      • 30:€2.9000
      • 120:€2.7000
      • 300:€2.6000
      Immagine Parte # Descrizione
      STGW60H65DFB

      Mfr.#: STGW60H65DFB

      OMO.#: OMO-STGW60H65DFB

      IGBT Transistors 600V 60A trench gate field-stop IGBT
      STGW60H65FB

      Mfr.#: STGW60H65FB

      OMO.#: OMO-STGW60H65FB

      IGBT Transistors 650V 60A Trench Gate Field-Stop IGBT
      STGW60H65DRF

      Mfr.#: STGW60H65DRF

      OMO.#: OMO-STGW60H65DRF

      IGBT Transistors 60A 650V Field Stop Trench Gate IBGT
      STGW60H60DLFB

      Mfr.#: STGW60H60DLFB

      OMO.#: OMO-STGW60H60DLFB

      IGBT Transistors 600V 60A trench gate field-stop IGBT
      STGW60V60F

      Mfr.#: STGW60V60F

      OMO.#: OMO-STGW60V60F

      IGBT Transistors 600V 60A Trench Gate 1.8V Vce IGBT
      STGW60H65FB

      Mfr.#: STGW60H65FB

      OMO.#: OMO-STGW60H65FB-STMICROELECTRONICS

      IGBT 650V 80A 375W TO247
      STGW60H65DRF

      Mfr.#: STGW60H65DRF

      OMO.#: OMO-STGW60H65DRF-STMICROELECTRONICS

      IGBT 650V 120A 420W TO247
      STGW60H65F

      Mfr.#: STGW60H65F

      OMO.#: OMO-STGW60H65F-STMICROELECTRONICS

      IGBT Transistors 60A 650V FST IGBT Very High Switching
      STGW60H60DLFB

      Mfr.#: STGW60H60DLFB

      OMO.#: OMO-STGW60H60DLFB-STMICROELECTRONICS

      IGBT 600V 80A 375W TO-247
      STGW60V60DF GW60V60DF

      Mfr.#: STGW60V60DF GW60V60DF

      OMO.#: OMO-STGW60V60DF-GW60V60DF-1190

      Nuovo e originale
      Disponibilità
      Azione:
      Available
      Su ordine:
      5000
      Inserisci la quantità:
      Il prezzo attuale di STGW60V60DF è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
      Prezzo di riferimento (USD)
      Quantità
      Prezzo unitario
      est. Prezzo
      1
      2,66 USD
      2,66 USD
      10
      2,53 USD
      25,31 USD
      100
      2,40 USD
      239,80 USD
      500
      2,26 USD
      1 132,40 USD
      1000
      2,13 USD
      2 131,60 USD
      Iniziare con
      Prodotti più recenti
      • PWD13F60 High-Density Power Driver
        STMicroelectronics' PWD13F60 integrated power MOSFET full bridge with embedded gate drivers in a 13 mm x 10 mm outline.
      • STSPIN32F0 Motor-Control System
        STMicroelectronics' STSPIN32F0 motor-control system-in-package combines the power and flexibility of a microcontroller-based drive with ease of use and space efficiency.
      • STripFET VI DeepGATE Series Power MOSFETs
        STMicroelectronics' 80 V MOSFETs with DeepGATE process integration result a more efficient and denser design in applications such as motor control and DC/DC converters.
      • ESDA8P30-1T2 TVS Diode
        STMicroelectronics' ESDA8P30-1T2 unidirectional, single-line TVS diode provides USB VBUS, power supply, and battery protection.
      • Compare STGW60V60DF
        STGW60V60DF vs STGW60V60DFGW60V60DF vs STGW60V60DLF
      • CLOUD-ST25TA02KB Evaluation Board
        STMicroelectronics' CLOUD-ST25TA02KB evaluation board for the ST25TA02KB-P device can be configured for various uses such as indicating field detection.
      Top