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STGW60H65DRF

STGW60H65DRF
Mfr. #:
STGW60H65DRF
Produttore:
STMicroelectronics
Descrizione:
IGBT Transistors 60A 650V Field Stop Trench Gate IBGT
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
STGW60H65DRF Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
STGW60H65DRF maggiori informazioni STGW60H65DRF Product Details
Attributo del prodotto
Valore attributo
Produttore:
STMicroelectronics
Categoria di prodotto:
Transistor IGBT
RoHS:
Y
Tecnologia:
si
Pacchetto/custodia:
TO-247
Stile di montaggio:
SMD/SMT
Tensione collettore-emettitore VCEO Max:
650 V
Tensione di saturazione collettore-emettitore:
1.9 V
Tensione massima dell'emettitore di gate:
20 V
Corrente continua del collettore a 25 C:
120 A
Pd - Dissipazione di potenza:
360 W
Serie:
STGW60H65DRF
Confezione:
Tubo
Marca:
STMicroelectronics
Corrente di dispersione gate-emettitore:
250 nA
Tipologia di prodotto:
Transistor IGBT
Quantità confezione di fabbrica:
600
sottocategoria:
IGBT
Unità di peso:
0.229281 oz
Tags
STGW60H65D, STGW60H65, STGW60H, STGW6, STGW, STG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    A***o
    A***o
    RU

    Got it fast. Took for hours on gris. I will add a review after the tests in the assembled product.

    2019-06-08
    M***k
    M***k
    TR

    very goodthanks

    2019-05-18
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IGBT,N CH,FAST,W/DIO,600V,120A,TO247; Transistor Type:IGBT; DC Collector Current:120A; Collector Emitter Voltage Vces:600V; Power Dissipation Pd:600W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-247AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Power Dissipation Max:600W
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Igbt, Single, 650V, 120A, To-247; Dc Collector Current:120A; Collector Emitter Saturation Voltage Vce(On):1.65V; Power Dissipation Pd:395W; Collector Emitter Voltage V(Br)Ceo:650V; Transistor Case Style:To-247; No. Of Pins:3Pins; Rohs Compliant: Yes |Infineon IGW75N65H5XKSA1
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***ark
Igbt, 650V, 90A, 175Deg C, 395W; Continuous Collector Current:90A; Collector Emitter Saturation Voltage:1.65V; Power Dissipation:395W; Collector Emitter Voltage Max:650V; No. Of Pins:3Pins; Operating Temperature Max:175°C Rohs Compliant: Yes |Infineon IKW75N65EH5XKSA1
***ineon
Infineons new TRENCHSTOP5 IGBT technology redefines Best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the markets high efficiency demands of tomorrow. | Summary of Features: 650V breakthrough voltage; Compared to Infineons best-in-class HighSpeed 3 family; Factor 2.5 lower Q g; Factor 2 reduction in switching losses; 200mV reduction in V CE(sat); Co-packed with Infineons new Rapid Si-diode technology; Low C OES/E OSS; Mild positive temperature coefficient V CE(sat); Temperature stability of V f | Benefits: Best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability; 50V increase in the bus voltage possible without compromising reliability; Higher power density design | Target Applications: Uninterruptible Power Supplies; Welding
STGW60H65 Field Stop Trench Gate IGBTs
STMicroelectronics STGW60H65 Field Stop Trench Gate IGBTs are the first IGBTs feature an advanced proprietary trench gate and field stop structure. An optimized compromise between conduction and switching losses results in maximum efficiency. A very tight parameter distribution and VCE(sat) temperature coefficient slight positive makes it easier to parallel devices. The STGW60H65 comes in three different versions, one without an anti-parallel diode, one with a fast soft recovery, and one with an ultrafast soft recovery.Learn More
Parte # Mfg. Descrizione Azione Prezzo
STGW60H65DRF
DISTI # V36:1790_06560782		STMicroelectronicsTrans IGBT Chip N-CH 650V 120A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		0
    STGW60H65DRF
    DISTI # 497-13166-ND    		STMicroelectronicsIGBT 650V 120A 420W TO247
    RoHS: Compliant
    Min Qty: 1
    Container: Tube    		319In Stock
    • 510:$6.1194
    • 120:$7.0274
    • 30:$8.0933
    • 10:$8.4880
    • 1:$9.4000
    STGW60H65DRF
    DISTI # STGW60H65DRF    		STMicroelectronicsTrans IGBT Chip N-CH 650V 120A 3-Pin(3+Tab) TO-247 Tube (Alt: STGW60H65DRF)
    RoHS: Compliant
    Min Qty: 1
    Container: Tube    		Europe - 0
    • 1000:€2.2900
    • 500:€2.4900
    • 100:€2.5900
    • 50:€2.6900
    • 25:€2.7900
    • 10:€2.8900
    • 1:€3.1900
    STGW60H65DRF
    DISTI # STGW60H65DRF    		STMicroelectronicsTrans IGBT Chip N-CH 650V 120A 3-Pin(3+Tab) TO-247 Tube - Rail/Tube (Alt: STGW60H65DRF)
    RoHS: Compliant
    Min Qty: 600
    Container: Tube    		Americas - 0
    • 6000:$4.7900
    • 3600:$4.8900
    • 2400:$5.0900
    • 1200:$5.2900
    • 600:$5.5900
    STGW60H65DRF
    DISTI # 43W6511    		STMicroelectronicsPTD HIGH VOLTAGE0
    • 500:$4.8900
    • 250:$5.0400
    • 100:$6.0200
    • 50:$6.4700
    • 25:$6.9200
    • 10:$7.6000
    • 1:$8.4600
    STGW60H65DRF
    DISTI # 511-STGW60H65DRF    		STMicroelectronicsIGBT Transistors 60A 650V Field Stop Trench Gate IBGT
    RoHS: Compliant    		758
    • 1:$8.9400
    • 10:$8.0800
    • 25:$7.7000
    • 100:$6.6900
    • 250:$6.3900
    • 500:$5.8200
    • 1000:$5.0700
    STGW60H65DRFSTMicroelectronics 239
      STGW60H65DRF
      DISTI # IGBT1341      		STMicroelectronicsIGBT650V120A1.9VTO247-3Stock DE - 0Stock HK - 0Stock US - 0
      • 600:$3.0000
      STGW60H65DRF
      DISTI # STGW60H65DRF      		STMicroelectronics650V 120A 420W TO247
      RoHS: Not Compliant      		20
      • 5:€3.2000
      • 30:€2.8000
      • 120:€2.6000
      • 300:€2.5000
      STGW60H65DRFSTMicroelectronics60 A, 650 V field stop trench gate IGBT with Ultrafast diode193
      • 1:$2.7300
      • 100:$2.4900
      • 500:$2.1900
      • 1000:$2.1900
      Immagine Parte # Descrizione
      FOD3120SD

      Mfr.#: FOD3120SD

      OMO.#: OMO-FOD3120SD

      		 Logic Output Optocouplers Optocoupl Logic-Out Push-Pul DC-In 1-Ch
      FOD3120SD

      Mfr.#: FOD3120SD

      OMO.#: OMO-FOD3120SD-ON-SEMICONDUCTOR

      		 Logic Output Optocouplers Optocoupl Logic-Out Push-Pul DC-In 1-Ch
      Disponibilità
      Azione:
      758
      Su ordine:
      2741
      Inserisci la quantità:
      Il prezzo attuale di STGW60H65DRF è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
      Prezzo di riferimento (USD)
      Quantità
      Prezzo unitario
      est. Prezzo
      1
      8,94 USD
      8,94 USD
      10
      8,08 USD
      80,80 USD
      25
      7,70 USD
      192,50 USD
      100
      6,69 USD
      669,00 USD
      250
      6,39 USD
      1 597,50 USD
      500
      5,82 USD
      2 910,00 USD
      1000
      5,07 USD
      5 070,00 USD
      A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
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