IRG4BC40W-STRRP

IRG4BC40W-STRRP
Mfr. #:
IRG4BC40W-STRRP
Produttore:
Infineon / IR
Descrizione:
IGBT Modules 600V 40AD2PAK
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IRG4BC40W-STRRP Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRG4BC40W-STRRP DatasheetIRG4BC40W-STRRP Datasheet (P4-P6)IRG4BC40W-STRRP Datasheet (P7-P9)IRG4BC40W-STRRP Datasheet (P10)
ECAD Model:
Maggiori informazioni:
IRG4BC40W-STRRP maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
Infineon
Categoria di prodotto:
Moduli IGBT
RoHS:
Y
Configurazione:
Separare
Tensione collettore-emettitore VCEO Max:
600 V
Corrente continua del collettore a 25 C:
40 A
Pacchetto/custodia:
D-PAK-3
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 150 C
Confezione:
Bobina
Altezza:
4.83 mm
Lunghezza:
10.67 mm
Larghezza:
9.65 mm
Marca:
Infineon / IR
Stile di montaggio:
SMD/SMT
Tensione massima dell'emettitore di gate:
20 V
Tipologia di prodotto:
Moduli IGBT
Quantità confezione di fabbrica:
800
sottocategoria:
IGBT
Parte # Alias:
SP001537010
Unità di peso:
0.009185 oz
Tags
IRG4BC40W-S, IRG4BC40W, IRG4BC4, IRG4BC, IRG4B, IRG4, IRG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
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Trans IGBT Chip N-CH 600V 40A 3-Pin(2+Tab) D2PAK T/R
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***rchild Semiconductor
Using novel field-stop IGBT technology, Fairchild’s new series of field-stop IGBTs offer optimum performance for automotive chargers, inverters, and other applications where low conduction and switching losses are essential.
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Copacked 600V IGBT in a D2-Pak package with a hyperfast 1-8 kHz diode, D2PAKCOPAK, RoHS
***ow.cn
Trans IGBT Chip N-CH 600V 31A 100000mW 3-Pin(2+Tab) D2PAK Tube
***ineon
Target Applications: Air Conditioner; Dryer; Pump; Solar; UPS; Washing Machine
***ment14 APAC
IGBT, D2-PAK; Transistor Type:IGBT; DC Collector Current:31A; Collector Emitter Voltage Vces:1.8V; Power Dissipation Pd:100W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (18-Jun-2012); Current Ic Continuous a Max:17A; Fall Time Max:230ns; Package / Case:D2-PAK; Power Dissipation Max:100W; Power Dissipation Pd:100W; Power Dissipation Pd:100W; Pulsed Current Icm:120A; Rise Time:27ns; Termination Type:SMD; Transistor Polarity:N Channel; Voltage Vces:600V
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Infineon's 600 V, 15 A single TRENCHSTOP™ IGBT3 in a TO263 D2Pak package, leads to significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept, PG-TO263-3, RoHS
***ment14 APAC
IGBT,600V,15A,TO263; Transistor Type:IGBT; DC Collector Current:15A; Collector Emitter Voltage Vces:2.05V; Power Dissipation Pd:130W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-40°C to +175°C; Transistor Case Style:TO-263; No. of Pins:3; Power Dissipation Max:130W
***ineon
Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop concept. Combination of IGBT with soft recovery Emitter Controlled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. | Summary of Features: Lowest V ce(sat) drop for lower conduction losses; Low switching losses; Easy parallel switching capability due to positive temperature coefficient in V ce(sat); Very soft, fast recovery anti-parallel Emitter Controlled Diode; High ruggedness, temperature stable behavior; Low EMI emissions; Low gate charge; Very tight parameter distribution | Benefits: Highest efficiency low conduction and switching losses; Comprehensive portfolio in 600V and 1200V for flexibility of design; High device reliability | Target Applications: UPS; Solar Inverters; Major Home Appliances; Welding; Air conditioning; Industrial Drives; Other hard switching applications
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Infineon Rectifier has an extensive portfolio of IGBTs that ranges from 300V to 1200V and achieves the highest performance for specific application requirements. The Infineon IGBT portfolio includes the new ultra-fast IRG7PH 1200V Trench IGBTs that offer higher system efficiency while cutting switching losses and delivering higher switching frequencies. International Infineon IRG7PH ultra-fast 1200V IGBTs utilize thin wafer Field-Stop Trench technology that significantly reduces switching and conduction losses to deliver higher power density and greater efficiency at higher frequencies.Learn More
Parte # Mfg. Descrizione Azione Prezzo
IRG4BC40W-STRRP
DISTI # IRG4BC40W-STRRP-ND
Infineon Technologies AGIGBT 600V 40A 160W D2PAK
RoHS: Compliant
Min Qty: 800
Container: Tape & Reel (TR)
Limited Supply - Call
  • 800:$2.6734
IRG4BC40W-STRRP
DISTI # IRG4BC40W-STRRP
Infineon Technologies AGTrans IGBT Chip N-CH 600V 40A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: IRG4BC40W-STRRP)
RoHS: Compliant
Min Qty: 800
Container: Reel
Americas - 0
  • 800:$2.0900
  • 1600:$1.9900
  • 3200:$1.8900
  • 4800:$1.8900
  • 8000:$1.7900
IRG4BC40W-STRRP
DISTI # 942-IRG4BC40W-STRRP
Infineon Technologies AGIGBT Modules 600V 40AD2PAK
RoHS: Compliant
0
    Immagine Parte # Descrizione
    IRG4BC40W-SPBF

    Mfr.#: IRG4BC40W-SPBF

    OMO.#: OMO-IRG4BC40W-SPBF

    IGBT Transistors 600V WARP 60-150 KHZ DISCRETE IGBT
    IRG4BC40W-SPBF

    Mfr.#: IRG4BC40W-SPBF

    OMO.#: OMO-IRG4BC40W-SPBF-INFINEON-TECHNOLOGIES

    IGBT Transistors 600V WARP 60-150 KHZ DISCRETE IGBT
    Disponibilità
    Azione:
    Available
    Su ordine:
    3000
    Inserisci la quantità:
    Il prezzo attuale di IRG4BC40W-STRRP è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
    Prezzo di riferimento (USD)
    Quantità
    Prezzo unitario
    est. Prezzo
    1
    4,06 USD
    4,06 USD
    10
    3,45 USD
    34,50 USD
    100
    2,99 USD
    299,00 USD
    250
    2,83 USD
    707,50 USD
    500
    2,54 USD
    1 270,00 USD
    A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
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