NSBA114EF3T5G

NSBA114EF3T5G
Mfr. #:
NSBA114EF3T5G
Produttore:
ON Semiconductor
Descrizione:
Bipolar Transistors - Pre-Biased SOT-1123 NBRT TRNSTR
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
NSBA114EF3T5G Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
NSBA114EF3T5G DatasheetNSBA114EF3T5G Datasheet (P4-P6)NSBA114EF3T5G Datasheet (P7-P9)NSBA114EF3T5G Datasheet (P10-P12)
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore:
ON Semiconductor
Categoria di prodotto:
Transistor bipolari - Pre-polarizzati
RoHS:
Y
Configurazione:
Separare
Polarità del transistor:
PNP
Resistenza di ingresso tipica:
10 kOhms
Rapporto resistore tipico:
1
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
SOT-1123-3
Tensione collettore-emettitore VCEO Max:
50 V
Corrente continua del collettore:
100 mA
Corrente di picco del collettore CC:
100 mA
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 150 C
Serie:
NSBA114EF3
Confezione:
Bobina
Altezza:
0.37 mm
Lunghezza:
0.6 mm
Larghezza:
0.8 mm
Marca:
ON Semiconductor
Tipologia di prodotto:
BJT - Transistor bipolari - Prepolarizzati
Quantità confezione di fabbrica:
8000
sottocategoria:
transistor
Tags
NSBA114E, NSBA114, NSBA11, NSBA1, NSBA, NSB
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We guarantee 100% customer satisfaction.

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We provide 90-360 days warranty.

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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Semiconductor
PNP Bipolar Digital Transistor (BRT) 50 V, 100 mA, 10 k, 10 k
***et
Trans Digital BJT PNP 50V 100mA 3-Pin SOT-1123 T/R
***ark
Brt Transistor, 50V, 10K/10Kohm, Sot1123; Digital Transistor Polarity:single Pnp; Collector Emitter Voltage V(Br)Ceo:50V; Continuous Collector Current Ic:100Ma; Base Input Resistor R1:10Kohm; Base-Emitter Resistor R2:10Kohm Rohs Compliant: Yes
***th Star Micro
This new series of digital transistors is designed to replace a single device and its external resistor bias network. The digital transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base emitter resistor. The digital transistor eliminates these individual components by integrating them into a single device. The use of a digital transistor can reduce both system cost and board space. The device is housed in the SOT1123 package which is designed for low power surface mount applications.
Parte # Mfg. Descrizione Azione Prezzo
NSBA114EF3T5G
DISTI # NSBA114EF3T5G-ND
ON SemiconductorTRANS PREBIAS PNP 254MW SOT1123
RoHS: Compliant
Min Qty: 8000
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 8000:$0.0977
NSBA114EF3T5G
DISTI # NSBA114EF3T5G
ON SemiconductorTrans Digital BJT PNP 50V 100mA 3-Pin SOT-1123 T/R (Alt: NSBA114EF3T5G)
RoHS: Compliant
Min Qty: 8000
Container: Tape and Reel
Europe - 0
  • 8000:€0.1469
  • 16000:€0.1109
  • 32000:€0.1009
  • 48000:€0.0899
  • 80000:€0.0849
NSBA114EF3T5G
DISTI # NSBA114EF3T5G
ON SemiconductorTrans Digital BJT PNP 50V 100mA 3-Pin SOT-1123 T/R - Tape and Reel (Alt: NSBA114EF3T5G)
RoHS: Compliant
Min Qty: 16000
Container: Reel
Americas - 0
  • 16000:$0.0779
  • 32000:$0.0769
  • 48000:$0.0759
  • 80000:$0.0749
  • 160000:$0.0739
NSBA114EF3T5G
DISTI # 49X8912
ON SemiconductorBRT TRANSISTOR, 50V, 10K/10KOHM, SOT1123,Digital Transistor Polarity:Single PNP,Collector Emitter Voltage V(br)ceo:50V,Continuous Collector Current Ic:100mA,Base Input Resistor R1:10kohm,Base-Emitter Resistor R2:10kohm RoHS Compliant: Yes0
  • 5000:$0.1070
  • 2500:$0.1260
  • 1000:$0.1550
  • 500:$0.1820
  • 250:$0.2160
  • 100:$0.2580
  • 50:$0.3090
  • 1:$0.4030
NSBA114EF3T5G
DISTI # 01P5096
ON SemiconductorBRT TRANSISTOR, 50V, 10K/10KOHM, SOT1123, FULL REEL,Digital Transistor Polarity:Single PNP,Collector Emitter Voltage V(br)ceo:50V,Continuous Collector Current Ic:100mA,Base Input Resistor R1:10kohm,RF Transistor Case:SOT-1123 RoHS Compliant: Yes0
  • 1:$0.1200
NSBA114EF3T5GON Semiconductor 
RoHS: Not Compliant
221500
  • 1000:$0.0900
  • 100:$0.1000
  • 500:$0.1000
  • 1:$0.1100
  • 25:$0.1100
NSBA114EF3T5G
DISTI # 863-NSBA114EF3T5G
ON SemiconductorBipolar Transistors - Pre-Biased SOT-1123 NBRT TRNSTR
RoHS: Compliant
8000
  • 1:$0.3500
  • 10:$0.2660
  • 100:$0.1440
  • 1000:$0.1080
  • 2500:$0.0930
  • 8000:$0.0870
  • 24000:$0.0800
  • 48000:$0.0770
  • 96000:$0.0740
Immagine Parte # Descrizione
NSBA114TDP6T5G

Mfr.#: NSBA114TDP6T5G

OMO.#: OMO-NSBA114TDP6T5G

Bipolar Transistors - Pre-Biased DUAL PBRT
NSBA114YF3T5G

Mfr.#: NSBA114YF3T5G

OMO.#: OMO-NSBA114YF3T5G

Bipolar Transistors - Pre-Biased SOT-1123 NBRT TRNSTR
NSBA113EDXV6T1G

Mfr.#: NSBA113EDXV6T1G

OMO.#: OMO-NSBA113EDXV6T1G

Bipolar Transistors - Pre-Biased SS SOT563 RSTR XSTR TR
NSBA114EDXV6T5

Mfr.#: NSBA114EDXV6T5

OMO.#: OMO-NSBA114EDXV6T5

Bipolar Transistors - Pre-Biased 100mA 50V Dual PNP
NSBA113EDXV6T1

Mfr.#: NSBA113EDXV6T1

OMO.#: OMO-NSBA113EDXV6T1-ON-SEMICONDUCTOR

TRANS 2PNP PREBIAS 0.5W SOT563
NSBA114EDXV6T1

Mfr.#: NSBA114EDXV6T1

OMO.#: OMO-NSBA114EDXV6T1-1190

Bipolar Transistors - Pre-Biased 100mA 50V Dual PNP
NSBA114EDXV6T5

Mfr.#: NSBA114EDXV6T5

OMO.#: OMO-NSBA114EDXV6T5-ON-SEMICONDUCTOR

TRANS 2PNP PREBIAS 0.5W SOT563
NSBA114TDXV6T1G

Mfr.#: NSBA114TDXV6T1G

OMO.#: OMO-NSBA114TDXV6T1G-1190

TRANS 2PNP PREBIAS 0.5W SOT563
NSBA114TDXV6T5G

Mfr.#: NSBA114TDXV6T5G

OMO.#: OMO-NSBA114TDXV6T5G-1190

TRANS PREBIAS DUAL PNP SOT563
NSBA115TDP6T5G

Mfr.#: NSBA115TDP6T5G

OMO.#: OMO-NSBA115TDP6T5G-ON-SEMICONDUCTOR

Bipolar Transistors - Pre-Biased DUAL PBRT
Disponibilità
Azione:
Available
Su ordine:
1991
Inserisci la quantità:
Il prezzo attuale di NSBA114EF3T5G è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
0,35 USD
0,35 USD
10
0,27 USD
2,66 USD
100
0,14 USD
14,40 USD
1000
0,11 USD
108,00 USD
2500
0,09 USD
232,50 USD
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