NSBA114YF3T5G

NSBA114YF3T5G
Mfr. #:
NSBA114YF3T5G
Produttore:
ON Semiconductor
Descrizione:
Bipolar Transistors - Pre-Biased SOT-1123 NBRT TRNSTR
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
NSBA114YF3T5G Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
NSBA114YF3T5G DatasheetNSBA114YF3T5G Datasheet (P4-P6)NSBA114YF3T5G Datasheet (P7-P9)NSBA114YF3T5G Datasheet (P10-P12)
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore:
ON Semiconductor
Categoria di prodotto:
Transistor bipolari - Pre-polarizzati
RoHS:
Y
Configurazione:
Separare
Polarità del transistor:
PNP
Resistenza di ingresso tipica:
10 kOhms
Rapporto resistore tipico:
0.21
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
SOT-1123-3
Tensione collettore-emettitore VCEO Max:
50 V
Corrente continua del collettore:
100 mA
Corrente di picco del collettore CC:
100 mA
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 150 C
Serie:
NSBA114YF3
Confezione:
Bobina
Guadagno di corrente CC hFE Max:
80
Altezza:
0.37 mm
Lunghezza:
0.6 mm
Larghezza:
0.8 mm
Marca:
ON Semiconductor
Tipologia di prodotto:
BJT - Transistor bipolari - Prepolarizzati
Quantità confezione di fabbrica:
8000
sottocategoria:
transistor
Tags
NSBA114Y, NSBA114, NSBA11, NSBA1, NSBA, NSB
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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***emi
PNP Bipolar Digital Transistor (BRT) 50 V, 100 mA, 10 k, 47 k
***r Electronics
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon
***et
Trans Digital BJT PNP 50V 100mA 3-Pin SOT-1123 T/R
***ark
Brt Transistor, 50V, 10K/47Kohm, Sot1123; Digital Transistor Polarity:single Pnp; Collector Emitter Voltage V(Br)Ceo:50V; Continuous Collector Current Ic:100Ma; Base Input Resistor R1:10Kohm; Base-Emitter Resistor R2:47Kohm Rohs Compliant: Yes
Parte # Mfg. Descrizione Azione Prezzo
NSBA114YF3T5G
DISTI # NSBA114YF3T5G-ND
ON SemiconductorTRANS PREBIAS PNP 254MW SOT1123
RoHS: Compliant
Min Qty: 8000
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 8000:$0.0977
NSBA114YF3T5G
DISTI # NSBA114YF3T5G
ON SemiconductorTrans Digital BJT PNP 50V 100mA 3-Pin SOT-1123 T/R (Alt: NSBA114YF3T5G)
RoHS: Compliant
Min Qty: 8000
Container: Tape and Reel
Europe - 0
  • 8000:€0.1469
  • 16000:€0.1109
  • 32000:€0.1009
  • 48000:€0.0899
  • 80000:€0.0849
NSBA114YF3T5G
DISTI # NSBA114YF3T5G
ON SemiconductorTrans Digital BJT PNP 50V 100mA 3-Pin SOT-1123 T/R - Tape and Reel (Alt: NSBA114YF3T5G)
RoHS: Compliant
Min Qty: 16000
Container: Reel
Americas - 0
  • 16000:$0.0779
  • 32000:$0.0769
  • 48000:$0.0759
  • 80000:$0.0749
  • 160000:$0.0739
NSBA114YF3T5G
DISTI # 46P8318
ON SemiconductorBRT TRANSISTOR, 50V, 10K/47KOHM, SOT1123,Digital Transistor Polarity:Single PNP,Collector Emitter Voltage V(br)ceo:50V,Continuous Collector Current Ic:100mA,Base Input Resistor R1:10kohm,Base-Emitter Resistor R2:47kohm RoHS Compliant: Yes0
  • 1:$0.1200
NSBA114YF3T5G
DISTI # 49X8918
ON SemiconductorBRT TRANSISTOR, 50V, 10K/47KOHM, SOT1123,Digital Transistor Polarity:Single PNP,Collector Emitter Voltage V(br)ceo:50V,Continuous Collector Current Ic:100mA,Base Input Resistor R1:10kohm,Base-Emitter Resistor R2:47kohm RoHS Compliant: Yes0
  • 5000:$0.1070
  • 2500:$0.1260
  • 1000:$0.1550
  • 500:$0.1820
  • 250:$0.2160
  • 100:$0.2580
  • 50:$0.3090
  • 1:$0.4030
NSBA114YF3T5G
DISTI # 863-NSBA114YF3T5G
ON SemiconductorBipolar Transistors - Pre-Biased SOT-1123 NBRT TRNSTR
RoHS: Compliant
8000
  • 1:$0.3500
  • 10:$0.2660
  • 100:$0.1440
  • 1000:$0.1080
  • 2500:$0.0930
  • 8000:$0.0870
  • 24000:$0.0800
  • 48000:$0.0770
  • 96000:$0.0740
NSBA114YF3T5GON Semiconductor 
RoHS: Not Compliant
456000
  • 1000:$0.0900
  • 100:$0.1000
  • 500:$0.1000
  • 1:$0.1100
  • 25:$0.1100
Immagine Parte # Descrizione
NSBA114TDP6T5G

Mfr.#: NSBA114TDP6T5G

OMO.#: OMO-NSBA114TDP6T5G

Bipolar Transistors - Pre-Biased DUAL PBRT
NSBA114TDXV6T5G

Mfr.#: NSBA114TDXV6T5G

OMO.#: OMO-NSBA114TDXV6T5G

Bipolar Transistors - Pre-Biased 100mA 50V Dual PNP
NSBA113EF3T5G

Mfr.#: NSBA113EF3T5G

OMO.#: OMO-NSBA113EF3T5G

Bipolar Transistors - Pre-Biased PNP DIGITAL TRANSISTOR (B
NSBA115TDP6T5G

Mfr.#: NSBA115TDP6T5G

OMO.#: OMO-NSBA115TDP6T5G

Bipolar Transistors - Pre-Biased DUAL PBRT
NSBA113EDXV6T1G

Mfr.#: NSBA113EDXV6T1G

OMO.#: OMO-NSBA113EDXV6T1G

Bipolar Transistors - Pre-Biased SS SOT563 RSTR XSTR TR
NSBA114YDXV6T1

Mfr.#: NSBA114YDXV6T1

OMO.#: OMO-NSBA114YDXV6T1-ON-SEMICONDUCTOR

TRANS 2PNP PREBIAS 0.5W SOT563
NSBA114YDP6T5G

Mfr.#: NSBA114YDP6T5G

OMO.#: OMO-NSBA114YDP6T5G-ON-SEMICONDUCTOR

Bipolar Transistors - Pre-Biased SOT-963 DUAL PBRT
NSBA113EDXV6T1G

Mfr.#: NSBA113EDXV6T1G

OMO.#: OMO-NSBA113EDXV6T1G-ON-SEMICONDUCTOR

Bipolar Transistors - Pre-Biased SS SOT563 RSTR XSTR TR
NSBA115EDXV6T1G

Mfr.#: NSBA115EDXV6T1G

OMO.#: OMO-NSBA115EDXV6T1G-ON-SEMICONDUCTOR

Bipolar Transistors - Pre-Biased 100mA 50V Dual PNP
NSBA114TDP6T5G

Mfr.#: NSBA114TDP6T5G

OMO.#: OMO-NSBA114TDP6T5G-ON-SEMICONDUCTOR

Bipolar Transistors - Pre-Biased DUAL PBRT
Disponibilità
Azione:
Available
Su ordine:
1991
Inserisci la quantità:
Il prezzo attuale di NSBA114YF3T5G è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
0,35 USD
0,35 USD
10
0,27 USD
2,66 USD
100
0,14 USD
14,40 USD
1000
0,11 USD
108,00 USD
2500
0,09 USD
232,50 USD
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