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BSO330N02KGFUMA1

BSO330N02KGFUMA1
Mfr. #:
BSO330N02KGFUMA1
Produttore:
Infineon Technologies
Descrizione:
MOSFET 2N-CH 20V 5.4A 8DSO
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
BSO330N02KGFUMA1 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Attributo del prodotto
Valore attributo
Tags
BSO330N02KG, BSO33, BSO3, BSO
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Transistor MOSFET Array Dual N-CH 20V 5.4A 8-Pin TDSON T/R
***i-Key
MOSFET 2N-CH 20V 5.4A 8DSO
***i-Key Marketplace
SMALL SIGNAL N-CHANNEL MOSFET
***ure Electronics
Dual N & P-Channel 20 V 30 mOhm PowerTrench® Mosfet - SOIC-8
***ical
Trans MOSFET N/P-CH 20V 6.5A/5A 8-Pin SOIC N T/R
***Yang
Trans MOSFET N/P-CH 20V 6.5A/5A 8-Pin SOIC N T/R - Product that comes on tape, but is not reeled (Al
***roFlash
Power Field-Effect Transistor, 6.5A I(D), 20V, 0.03ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
***ment14 APAC
MOSFET, N & P CH 8SOIC; Transistor Polarity:N and P Channel; Continuous Drain Current Id:6.5A; Drain Source Voltage Vds:20V; On Resistance Rds(on):30mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:1V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:6.5A; Package / Case:SOIC; Power Dissipation Pd:2W; Termination Type:SMD; Voltage Vds Typ:20V; Voltage Vgs Max:1V; Voltage Vgs Rds on Measurement:4.5V
***rchild Semiconductor
These dual N- and P-channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize on-state ressitance and yet maintain superior switching performance.These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
***(Formerly Allied Electronics)
IRF7317PBF Dual N/P-channel MOSFET Transistor; 5.3 A; 6.6 A; 20 V; 8-Pin SOIC
***ure Electronics
Dual N/P-Channel 20 V 0.029/0.058 Ohm 18/19 nC HEXFET® Power Mosfet - SOIC-8
***ineon SCT
20V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS
***nell
MOSFET, DUAL, NP, LOGIC, SO-8; Transistor Polarity: N and P Channel; Continuous Drain Current Id: 6.6A; Drain Source Voltage Vds: 20V; On Resistance Rds(on): 0.023ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 700
***ark
Dual N/p Channel Mosfet, 20V, Soic; Channel Type:complementary N And P Channel; Drain Source Voltage Vds N Channel:20V; Drain Source Voltage Vds P Channel:20V; Continuous Drain Current Id N Channel:6.6A; No. Of Pins:8Pins Rohs Compliant: Yes
***emi
Dual N-Channel PowerTrench® MOSFET, 2.5V Specified, 20V, 6.5A, 30mΩ
***ure Electronics
Dual N-Channel 20 V 30 mOhm Surface Mount PowerTrench Mosfet - SOIC-8
***Yang
Transistor MOSFET Array Dual N-CH 20V 6.5A 8-Pin SOIC T/R - Product that comes on tape, but is not r
***el Electronic
ON SEMICONDUCTOR - FDS9926A - Dual MOSFET, Dual N Channel, 6.5 A, 20 V, 0.025 ohm, 4.5 V, 1 V
***ment14 APAC
MOSFET, DUAL, N, SMD, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:6.5A; Drain Source Voltage Vds:20V; On Resistance Rds(on):30mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:2W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:6.5A; Package / Case:SOIC; Power Dissipation Pd:2W; Termination Type:SMD; Voltage Vds Typ:20V; Voltage Vgs Max:1V; Voltage Vgs Rds on Measurement:4.5V
***rchild Semiconductor
These N-Channel 2.5V specified MOSFETs use Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 10V).
***ure Electronics
Dual N-Channel 20 V 30 mOhm 13 nC HEXFET® Power Mosfet - SOIC-8
*** Source Electronics
MOSFET 2N-CH 20V 7A 8-SOIC / Trans MOSFET N-CH Si 20V 7A 8-Pin SOIC T/R
***ineon
Benefits: RoHS Compliant; Low RDS(on); Dual N-Channel MOSFET
***ark
Mosfet, Dual N-Ch, 20V, 7A, Soic; Transistor Polarity:dual N Channel; Continuous Drain Current Id:7A; Drain Source Voltage Vds:20V; On Resistance Rds(On):0.03Ohm; Rds(On) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1.2V; Power Rohs Compliant: Yes
***ure Electronics
Single P-Channel 20 V 0.04 Ohm 50 nC HEXFET® Power Mosfet - SOIC-8
***(Formerly Allied Electronics)
MOSFET, P-CHANNEL, -20V, -6.7A, 40 mOhm, 33.3 nC Qg, SO-8
***Yang
Trans MOSFET P-CH 20V 6.7A 8-Pin SOIC T/R - Tape and Reel
***ineon SCT
-20V Single P-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS
***roFlash
Power Field-Effect Transistor, 5.3A I(D), 20V, 0.04ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; P-Channel MOSFET
***nell
MOSFET, P, LOGIC, SO-8; Transistor Polarity: P Channel; Continuous Drain Current Id: -6.7A; Drain Source Voltage Vds: -20V; On Resistance Rds(on): 0.04ohm; Rds(on) Test Voltage Vgs: -4.5V; Threshold Voltage Vgs: -700mV; Power
***trelec
Transistor Polarity = P-Channel / Configuration = Single / Continuous Drain Current (Id) A = -7.7 / Drain-Source Voltage (Vds) V = -20 / ON Resistance (Rds(on)) mOhm = 40 / Gate-Source Voltage V = 12 / Fall Time ns = 65 / Rise Time ns = 32 / Turn-OFF Delay Time ns = 100 / Turn-ON Delay Time ns = 14 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SO-8 / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 2.5
***Yang
Transistor MOSFET Array Dual P-Channel 20V 5A 8-Pin SOIC N T/R - Bulk
***inecomponents.com
Dual P-Channel 2.5V Specified PowerTrench® MOSFET
***DA Technology Co., Ltd.
Product Description Demo for Development.
***ser
MOSFETs Dl P-Ch 2.5V Spec PowerTrench
***rchild Semiconductor
This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V).
Parte # Mfg. Descrizione Azione Prezzo
BSO330N02KGFUMA1
DISTI # BSO330N02KGFUMA1TR-ND		Infineon Technologies AGMOSFET 2N-CH 20V 5.4A 8DSO
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		Limited Supply - Call
    BSO330N02KGFUMA1
    DISTI # BSO330N02KGFUMA1CT-ND    		Infineon Technologies AGMOSFET 2N-CH 20V 5.4A 8DSO
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Limited Supply - Call
      BSO330N02KGFUMA1
      DISTI # BSO330N02KGFUMA1DKR-ND      		Infineon Technologies AGMOSFET 2N-CH 20V 5.4A 8DSO
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®      		Limited Supply - Call
        BSO330N02KGFUMA1
        DISTI # BSO330N02KGFUMA1        		Infineon Technologies AGTrans MOSFET 2N-CH 20V 5.4A 8DSO - Bulk (Alt: BSO330N02KGFUMA1)
        Min Qty: 1389
        Container: Bulk        		Americas - 0
        • 13890:$0.2279
        • 6945:$0.2319
        • 4167:$0.2399
        • 2778:$0.2499
        • 1389:$0.2589
        BSO330N02K G
        DISTI # 726-BSO330N02KG        		Infineon Technologies AGMOSFET N-Ch 20V 5.4A DSO-8 OptiMOS 2
        RoHS: Compliant        		2299
        • 1:$0.9300
        • 10:$0.7200
        • 100:$0.5510
        • 500:$0.4660
        • 1000:$0.3710
        • 2500:$0.3070
        • 5000:$0.2860
        • 10000:$0.2750
        • 25000:$0.2650
        BSO330N02KGFUMA1Infineon Technologies AGPower Field-Effect Transistor, 4.2A I(D), 20V, 0.03ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
        RoHS: Compliant        		12500
        • 1000:$0.2400
        • 500:$0.2500
        • 100:$0.2600
        • 25:$0.2700
        • 1:$0.2900
        Immagine Parte # Descrizione
        BSO330N02K(330N2K)

        Mfr.#: BSO330N02K(330N2K)

        OMO.#: OMO-BSO330N02K-330N2K--1190

        		 Nuovo e originale
        BSO330N02KG

        Mfr.#: BSO330N02KG

        OMO.#: OMO-BSO330N02KG-1190

        		 Power Field-Effect Transistor, 4.2A I(D), 20V, 0.03ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
        BSO330N02KGFUMA1

        Mfr.#: BSO330N02KGFUMA1

        OMO.#: OMO-BSO330N02KGFUMA1-INFINEON-TECHNOLOGIES

        		 MOSFET 2N-CH 20V 5.4A 8DSO
        BSO330N02K G

        Mfr.#: BSO330N02K G

        OMO.#: OMO-BSO330N02K-G-126

        		 IGBT Transistors MOSFET N-Ch 20V 5.4A DSO-8 OptiMOS 2
        Disponibilità
        Azione:
        Available
        Su ordine:
        4000
        Inserisci la quantità:
        Il prezzo attuale di BSO330N02KGFUMA1 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
        Prezzo di riferimento (USD)
        Quantità
        Prezzo unitario
        est. Prezzo
        1
        0,34 USD
        0,34 USD
        10
        0,32 USD
        3,25 USD
        100
        0,31 USD
        30,77 USD
        500
        0,29 USD
        145,30 USD
        1000
        0,27 USD
        273,50 USD
        A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
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