BSO330N02K G

Mfr. #:: BSO330N02K G
Produttore:
Descrizione:: IGBT Transistors MOSFET N-Ch 20V 5.4A DSO-8 OptiMOS 2
Ciclo vitale:: Nuovo da questo produttore.
Scheda dati:: BSO330N02K G Scheda dati
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Attributo del prodotto
Valore attributo

Produttore

categoria di prodotto: FET - Array

Serie: OptiMOS 2

Confezione: Bobina

Alias parziali: BSO330N02KGFUMA1 SP000380284

Stile di montaggio: SMD/SMT

Nome depositato: OptiMOS

Pacchetto-Custodia: DSO-8

Tecnologia: si

Numero di canali: 2 Channel

Configurazione: Doppio doppio scarico

Tipo a transistor: 2 N-Channel

Pd-Power-Dissipazione: 2.5 W

Massima temperatura di esercizio: + 150 C

Temperatura di esercizio minima: - 55 C

Tempo di caduta: 2.8 ns

Ora di alzarsi: 16.8 ns

Vgs-Gate-Source-Voltage: 12 V

Id-Continuo-Scarico-Corrente: 5.4 A

Vds-Drain-Source-Breakdown-Voltage: 20 V

Rds-On-Drain-Source-Resistenza: 30 mOhms

Polarità del transistor: Canale N

Tempo di ritardo allo spegnimento tipico: 13.4 ns

Tempo di ritardo all'accensione tipico: 7.4 ns

Modalità canale: Aumento

Tags: BSO330N02KG, BSO33, BSO3, BSO

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We provide 90-360 days warranty.

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Step1:
Vacuum Packaging with PL

Step2:
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Step3:
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BSO330N02K G Descrizione

***et: Transistor MOSFET Array Dual N-Channel 20V 5.4A 8-Pin DSO

***i-Key: N-CHANNEL POWER MOSFET

***el Nordic: Contact for details

*** International: BSO330N02KG INFINEO

***nell: MOSFET, N CH, 6.5A, 20V, PG-DSO-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 5.4A; Drain Source Voltage Vds: 20V; On Resistance Rds(on): 0.024ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 950mV; Power Dissipation Pd: 2.5W; Transistor Case Style: DSO; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Current Id Max: 6.5A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Transistor Type: Power MOSFET; Voltage Vgs Max: 12V

***(Formerly Allied Electronics): IRF7311PBF Dual N-channel MOSFET Transistor; 6.6 A; 20 V; 8-Pin SOIC

***Yang: Transistor MOSFET Array Dual N-CH 20V 6.6A 8-Pin SOIC T/R - Tape and Reel

***ure Electronics: Dual N-Channel 20 V 0.029 Ohm 18 nC HEXFET® Power Mosfet - SOIC-8

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 6.6A I(D), 20V, 0.029ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

***nell: MOSFET, DUAL, NN, LOGIC, SO-8; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 6.6A; Drain Source Voltage Vds: 20V; On Resistance Rds(on): 0.029ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 700m

***ure Electronics: Dual N & P-Channel 20 V 30 mOhm PowerTrench® Mosfet - SOIC-8

***et Europe: Trans MOSFET N/P-CH 20V 6.5A/5A 8-Pin SOIC N T/R

***Yang: Trans MOSFET N/P-CH 20V 6.5A/5A 8-Pin SOIC N T/R - Product that comes on tape, but is not reeled (Al

***roFlash: Power Field-Effect Transistor, 6.5A I(D), 20V, 0.03ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET

***ment14 APAC: MOSFET, N & P CH 8SOIC; Transistor Polarity:N and P Channel; Continuous Drain Current Id:6.5A; Drain Source Voltage Vds:20V; On Resistance Rds(on):30mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:1V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:6.5A; Package / Case:SOIC; Power Dissipation Pd:2W; Termination Type:SMD; Voltage Vds Typ:20V; Voltage Vgs Max:1V; Voltage Vgs Rds on Measurement:4.5V

***rchild Semiconductor: These dual N- and P-channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize on-state ressitance and yet maintain superior switching performance.These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

***emi: Dual N-Channel PowerTrench® MOSFET, 2.5V Specified, 20V, 6.5A, 30mΩ

***ure Electronics: Dual N-Channel 20 V 30 mOhm Surface Mount PowerTrench Mosfet - SOIC-8

***Yang: Transistor MOSFET Array Dual N-CH 20V 6.5A 8-Pin SOIC T/R - Product that comes on tape, but is not r

***el Electronic: ON SEMICONDUCTOR - FDS9926A - Dual MOSFET, Dual N Channel, 6.5 A, 20 V, 0.025 ohm, 4.5 V, 1 V

***ment14 APAC: MOSFET, DUAL, N, SMD, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:6.5A; Drain Source Voltage Vds:20V; On Resistance Rds(on):30mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:2W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:6.5A; Package / Case:SOIC; Power Dissipation Pd:2W; Termination Type:SMD; Voltage Vds Typ:20V; Voltage Vgs Max:1V; Voltage Vgs Rds on Measurement:4.5V

***rchild Semiconductor: These N-Channel 2.5V specified MOSFETs use Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 10V).

***ure Electronics: Dual N-Channel 20 V 30 mOhm 13 nC HEXFET® Power Mosfet - SOIC-8

*** Source Electronics: MOSFET 2N-CH 20V 7A 8-SOIC / Trans MOSFET N-CH Si 20V 7A 8-Pin SOIC T/R

***ineon: Benefits: RoHS Compliant; Low RDS(on); Dual N-Channel MOSFET

***ark: Mosfet, Dual N-Ch, 20V, 7A, Soic; Transistor Polarity:dual N Channel; Continuous Drain Current Id:7A; Drain Source Voltage Vds:20V; On Resistance Rds(On):0.03Ohm; Rds(On) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1.2V; Power Rohs Compliant: Yes

***emi: Small Signal MOSFET 20V 4.2A 45 mOhm Single N-Channel SO-8

***ark: Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:4.2A; On Resistance, Rds(on):45mohm; Rds(on) Test Voltage, Vgs:4.5V; Threshold Voltage, Vgs Typ:0.95V ;RoHS Compliant: Yes

***nell: MOSFET, N, 20V, SOIC-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 4.2A; Drain Source Voltage Vds: 20V; On Resistance Rds(on): 0.045ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 950mV; Power Dissipation Pd: 770mW; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Current Id Max: 4.2A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Termination Type: Surface Mount Device; Voltage Vds Typ: 20V; Voltage Vgs Max: 950mV; Voltage Vgs Rds on Measurement: 4.5V

Market price

Parte #	Mfg.	Descrizione	Azione	Prezzo
BSO330N02KGFUMA1 DISTI # BSO330N02KGFUMA1TR-ND	Infineon Technologies AG	MOSFET 2N-CH 20V 5.4A 8DSO RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	Limited Supply - Call
BSO330N02KGFUMA1 DISTI # BSO330N02KGFUMA1CT-ND	Infineon Technologies AG	MOSFET 2N-CH 20V 5.4A 8DSO RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
BSO330N02KGFUMA1 DISTI # BSO330N02KGFUMA1DKR-ND	Infineon Technologies AG	MOSFET 2N-CH 20V 5.4A 8DSO RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
BSO330N02K G DISTI # 726-BSO330N02KG	Infineon Technologies AG	MOSFET N-Ch 20V 5.4A DSO-8 OptiMOS 2 RoHS: Compliant	2299	1:$0.9300 10:$0.7200 100:$0.5510 500:$0.4660 1000:$0.3710 2500:$0.3070 5000:$0.2860 10000:$0.2750 25000:$0.2650
BSO330N02KG	Infineon Technologies AG	Power Field-Effect Transistor, 4.2A I(D), 20V, 0.03ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	2746	1000:$0.2500 500:$0.2600 100:$0.2700 25:$0.2900 1:$0.3100
BSO330N02KGFUMA1	Infineon Technologies AG	Power Field-Effect Transistor, 4.2A I(D), 20V, 0.03ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	12500	1000:$0.2700 500:$0.2800 100:$0.2900 25:$0.3000 1:$0.3300

Prodotti correlati

Immagine	Parte #	Descrizione
	Mfr.#: BSO330N02K(330N2K) OMO.#: OMO-BSO330N02K-330N2K--1190	Nuovo e originale
	Mfr.#: BSO330N02KG OMO.#: OMO-BSO330N02KG-1190	Power Field-Effect Transistor, 4.2A I(D), 20V, 0.03ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
	Mfr.#: BSO330N02KGFUMA1 OMO.#: OMO-BSO330N02KGFUMA1-INFINEON-TECHNOLOGIES	MOSFET 2N-CH 20V 5.4A 8DSO
	Mfr.#: BSO330N02K G OMO.#: OMO-BSO330N02K-G-126	IGBT Transistors MOSFET N-Ch 20V 5.4A DSO-8 OptiMOS 2

Disponibilità

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Il prezzo attuale di BSO330N02K G è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]

Prezzo di riferimento (USD)

Quantità
Prezzo unitario
est. Prezzo

1: ~~0,40 USD~~; ~~0,40 USD~~

10: ~~0,38 USD~~; ~~3,78 USD~~

100: ~~0,36 USD~~; ~~35,78 USD~~

500: ~~0,34 USD~~; ~~168,95 USD~~

1000: ~~0,32 USD~~; ~~318,00 USD~~

Iniziare con

BSO330N02KG 3
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BSO330N02K G

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes