GS8161E18DGD-200IV

GS8161E18DGD-200IV
Mfr. #:
GS8161E18DGD-200IV
Produttore:
GSI Technology
Descrizione:
SRAM 1.8/2.5V 1M x 18 18M
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
GS8161E18DGD-200IV Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
GS8161E18DGD-200IV maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
Tecnologia GSI
Categoria di prodotto:
SRAM
RoHS:
Y
Dimensione della memoria:
18 Mbit
Organizzazione:
1 M x 18
Orario di accesso:
6.5 ns
Frequenza massima di clock:
200 MHz
Tipo di interfaccia:
Parallelo
Tensione di alimentazione - Max:
2.7 V
Tensione di alimentazione - Min:
1.7 V
Corrente di alimentazione - Max:
210 mA, 215 mA
Temperatura di esercizio minima:
- 40 C
Temperatura massima di esercizio:
+ 85 C
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
BGA-165
Confezione:
Vassoio
Tipo di memoria:
SDR
Serie:
GS8161E18DGD
Tipo:
Conduttura DCD/Flusso passante
Marca:
Tecnologia GSI
Sensibile all'umidità:
Tipologia di prodotto:
SRAM
Quantità confezione di fabbrica:
18
sottocategoria:
Memoria e archiviazione dati
Nome depositato:
SyncBurst
Tags
GS8161E18DGD-20, GS8161E18DGD-2, GS8161E18DGD, GS8161E18DG, GS8161E1, GS8161E, GS8161, GS816, GS81, GS8
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
SRAM Chip Sync Dual 1.8V/2.5V 18M-Bit 1M x 18 6.5ns/3ns 165-Pin FBGA
***ical
SRAM Chip Sync Single 1.8V 18M-bit 1M x 18 0.45ns 165-Pin FBGA Tray
***-Wing Technology
e0 Surface Mount CY7C1318 Tray ic memory 250MHz 450ps 380mA 18Mb
***ress Semiconductor SCT
DDR-II CIO, 18 Mbit Density, BGA-165
***ponent Stockers USA
1M X 18 DDR SRAM 0.45 ns PBGA165
***i-Key
IC SRAM 18MBIT PARALLEL 165FBGA
***et
SRAM Chip Sync Single 1.8V 18M-Bit 1M x 18 0.45ns 165-Pin FBGA Tray
***-Wing Technology
e0 Surface Mount CY7C1318 Tray ic memory 250MHz 450ps 380mA 18Mb
***DA Technology Co., Ltd.
Product Description Demo for Development.
***i-Key
IC SRAM 18MBIT PARALLEL 165FBGA
***or
DDR SRAM, 1MX18, 0.45NS, CMOS, P
***et
SRAM Chip Sync Single 1.8V 18M-Bit 1M x 18 0.45ns 165-Pin FBGA Tray
***-Wing Technology
e1 Surface Mount CY7C1318 Tray ic memory 250MHz 450ps 380mA 18Mb
***ress Semiconductor SCT
DDR-II CIO, 18 Mbit Density, FBGA-165, RoHS
***ponent Stockers USA
1M X 18 DDR SRAM 0.45 ns PBGA165
***i-Key
IC SRAM 18MBIT PARALLEL 165FBGA
***pmh
IC SRAM 32M PARALLEL 52TSOP II
***et
SRAM Chip Sync Single 1.8V 18M-Bit 1M x 18 0.45ns 165-Pin LFBGA
***i-Key
IC SRAM 18MBIT PARALLEL 165LFBGA
***ark
18Mb, Ddr Ii (Burst Of 2) Cio, Sync Sram, 1M X 18, 165 Ball Fbga (13X15 Mm), Rohs |Integrated Silicon Solution (Issi) IS61DDB21M18A-300B4L
SyncBurst SRAMs
GSI Technology SyncBurst SRAMs are a broad portfolio of Synchronous Burst (SyncBurst™) SRAMs with fast clock rates and low power. SyncBurst SRAMs provide a "burst" of (typically) 2 to 4 words in response to a single clock signal. The devices' simplified interface is designed to use a data bus's maximum bandwidth. SyncBurst SRAMs are used in military, networking, industrial, automotive and medical imaging applications where a mid-range performance point is required.Learn More
Immagine Parte # Descrizione
GS8161E18DD-200IV

Mfr.#: GS8161E18DD-200IV

OMO.#: OMO-GS8161E18DD-200IV

SRAM 1.8/2.5V 1M x 18 18M
GS8161E18DGD-333

Mfr.#: GS8161E18DGD-333

OMO.#: OMO-GS8161E18DGD-333

SRAM 2.5 or 3.3V 1M x 18 18M
GS8161E18DD-150I

Mfr.#: GS8161E18DD-150I

OMO.#: OMO-GS8161E18DD-150I

SRAM 2.5 or 3.3V 1M x 18 18M
GS8161E18DGT-150

Mfr.#: GS8161E18DGT-150

OMO.#: OMO-GS8161E18DGT-150

SRAM 2.5 or 3.3V 1M x 18 18M
GS8161E18DD-150

Mfr.#: GS8161E18DD-150

OMO.#: OMO-GS8161E18DD-150

SRAM 2.5 or 3.3V 1M x 18 18M
GS8161E18DGT-150I

Mfr.#: GS8161E18DGT-150I

OMO.#: OMO-GS8161E18DGT-150I

SRAM 2.5 or 3.3V 1M x 18 18M
GS8161E18DGT-200IV

Mfr.#: GS8161E18DGT-200IV

OMO.#: OMO-GS8161E18DGT-200IV

SRAM 1.8/2.5V 1M x 18 18M
GS8161E18DD-333V

Mfr.#: GS8161E18DD-333V

OMO.#: OMO-GS8161E18DD-333V

SRAM 1.8/2.5V 1M x 18 18M
GS8161E18DGT-400

Mfr.#: GS8161E18DGT-400

OMO.#: OMO-GS8161E18DGT-400

SRAM 2.5 or 3.3V 1M x 18 18M
GS8161E18DD-400I

Mfr.#: GS8161E18DD-400I

OMO.#: OMO-GS8161E18DD-400I

SRAM 2.5 or 3.3V 1M x 18 18M
Disponibilità
Azione:
Available
Su ordine:
2500
Inserisci la quantità:
Il prezzo attuale di GS8161E18DGD-200IV è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
26,46 USD
26,46 USD
25
24,57 USD
614,25 USD
A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
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