GS8161E18DD-333V

GS8161E18DD-333V
Mfr. #:
GS8161E18DD-333V
Produttore:
GSI Technology
Descrizione:
SRAM 1.8/2.5V 1M x 18 18M
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
GS8161E18DD-333V Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
GS8161E18DD-333V maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
Tecnologia GSI
Categoria di prodotto:
SRAM
Dimensione della memoria:
18 Mbit
Organizzazione:
1 M x 18
Orario di accesso:
5 ns
Frequenza massima di clock:
333 MHz
Tipo di interfaccia:
Parallelo
Tensione di alimentazione - Max:
2.7 V
Tensione di alimentazione - Min:
1.7 V
Corrente di alimentazione - Max:
220 mA, 280 mA
Temperatura di esercizio minima:
0 C
Temperatura massima di esercizio:
+ 70 C
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
BGA-165
Confezione:
Vassoio
Tipo di memoria:
SDR
Serie:
GS8161E18DD
Tipo:
Conduttura DCD/Flusso passante
Marca:
Tecnologia GSI
Sensibile all'umidità:
Tipologia di prodotto:
SRAM
Quantità confezione di fabbrica:
18
sottocategoria:
Memoria e archiviazione dati
Nome depositato:
SyncBurst
Tags
GS8161E18DD-33, GS8161E18DD-3, GS8161E18DD, GS8161E1, GS8161E, GS8161, GS816, GS81, GS8
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
SRAM Chip Sync Dual 1.8V/2.5V 18M-Bit 1M x 18 5ns/3ns 165-Pin FBGA
SyncBurst SRAMs
GSI Technology SyncBurst SRAMs are a broad portfolio of Synchronous Burst (SyncBurst™) SRAMs with fast clock rates and low power. SyncBurst SRAMs provide a "burst" of (typically) 2 to 4 words in response to a single clock signal. The devices' simplified interface is designed to use a data bus's maximum bandwidth. SyncBurst SRAMs are used in military, networking, industrial, automotive and medical imaging applications where a mid-range performance point is required.Learn More
Immagine Parte # Descrizione
GS8161E18DD-200I

Mfr.#: GS8161E18DD-200I

OMO.#: OMO-GS8161E18DD-200I

SRAM 2.5 or 3.3V 1M x 18 18M
GS8161E18DD-250

Mfr.#: GS8161E18DD-250

OMO.#: OMO-GS8161E18DD-250

SRAM 2.5 or 3.3V 1M x 18 18M
GS8161E18DGD-200I

Mfr.#: GS8161E18DGD-200I

OMO.#: OMO-GS8161E18DGD-200I

SRAM 2.5 or 3.3V 1M x 18 18M
GS8161E18DD-150V

Mfr.#: GS8161E18DD-150V

OMO.#: OMO-GS8161E18DD-150V

SRAM 1.8/2.5V 1M x 18 18M
GS8161E18DGT-150IV

Mfr.#: GS8161E18DGT-150IV

OMO.#: OMO-GS8161E18DGT-150IV

SRAM 1.8/2.5V 1M x 18 18M
GS8161E18DGT-333V

Mfr.#: GS8161E18DGT-333V

OMO.#: OMO-GS8161E18DGT-333V

SRAM 1.8/2.5V 1M x 18 18M
GS8161E18DGT-250IV

Mfr.#: GS8161E18DGT-250IV

OMO.#: OMO-GS8161E18DGT-250IV

SRAM 1.8/2.5V 1M x 18 18M
GS8161E18DD-333V

Mfr.#: GS8161E18DD-333V

OMO.#: OMO-GS8161E18DD-333V

SRAM 1.8/2.5V 1M x 18 18M
GS8161E18DGT-375

Mfr.#: GS8161E18DGT-375

OMO.#: OMO-GS8161E18DGT-375

SRAM 2.5 or 3.3V 1M x 18 18M
GS8161E18DD-333I

Mfr.#: GS8161E18DD-333I

OMO.#: OMO-GS8161E18DD-333I

SRAM 2.5 or 3.3V 1M x 18 18M
Disponibilità
Azione:
Available
Su ordine:
3000
Inserisci la quantità:
Il prezzo attuale di GS8161E18DD-333V è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
27,62 USD
27,62 USD
25
25,64 USD
641,00 USD
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