IPL65R190E6AUMA1

IPL65R190E6AUMA1
Mfr. #:
IPL65R190E6AUMA1
Produttore:
Infineon Technologies
Descrizione:
MOSFET N-Ch 650V 20.2A VSON-4
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IPL65R190E6AUMA1 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore:
Infineon
Categoria di prodotto:
MOSFET
RoHS:
Y
Tecnologia:
si
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
VSON-4
Numero di canali:
1 Channel
Polarità del transistor:
Canale N
Vds - Tensione di rottura Drain-Source:
650 V
Id - Corrente di scarico continua:
20.2 A
Rds On - Resistenza Drain-Source:
190 mOhms
Vgs th - Tensione di soglia gate-source:
3 V
Vgs - Tensione Gate-Source:
20 V
Qg - Carica cancello:
73 nC
Temperatura di esercizio minima:
- 40 C
Temperatura massima di esercizio:
+ 150 C
Pd - Dissipazione di potenza:
151 W
Configurazione:
Separare
Modalità canale:
Aumento
Nome depositato:
CoolMOS
Confezione:
Bobina
Altezza:
1.1 mm
Lunghezza:
8 mm
Serie:
CoolMOS E6
Tipo di transistor:
1 N-Channel
Larghezza:
8 mm
Marca:
Tecnologie Infineon
Tempo di caduta:
10 ns
Tipologia di prodotto:
MOSFET
Ora di alzarsi:
11 ns
Quantità confezione di fabbrica:
3000
sottocategoria:
MOSFET
Tempo di ritardo allo spegnimento tipico:
112 ns
Tempo di ritardo di accensione tipico:
12 ns
Parte # Alias:
IPL65R190E6AUMA1 SP001074938
Tags
IPL65R19, IPL65R1, IPL65R, IPL65, IPL6, IPL
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 650V 20.2A 5-Pin Thin-PAK T/R
***ineon SCT
CoolMOS™ E6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation, PG-VSON-4, RoHS
***ineon
CoolMOS E6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The offered devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease-of-use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler. | Summary of Features: Easy control of switching behavior; Very high commutation ruggedness; Extremely low losses due to very low Figure of Merit (R DS(ON)*Q g) and E oss); Easy to use; Better light load efficiency compared to C3; Outstanding reliability with proven CoolMOS quality combined with high body diode ruggedness; Better price performance in comparison to previous CoolMOS generations; More efficient, more compact, lighter and cooler | Benefits: Improved power density; Improved reliability; General purpose part can be used in both soft and hard switching topologies; Better light load effciency; Improved effciency in hard switching applications; Improved ease-of-use; Reduces possible ringing due to pcb layout and package parasitic effects | Target Applications: Consumer; Adapter; eMobility; PFC stages for server & telecom; SMPS; PC power; Solar; Lighting
Parte # Mfg. Descrizione Azione Prezzo
IPL65R190E6AUMA1
DISTI # IPL65R190E6AUMA1-ND
Infineon Technologies AGMOSFET N-CH 4VSON
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
Limited Supply - Call
    IPL65R190E6AUMA1
    DISTI # 726-IPL65R190E6AUMA1
    Infineon Technologies AGMOSFET N-Ch 650V 20.2A VSON-4
    RoHS: Compliant
    0
      IPL65R190E6AUMA1
      DISTI # 8977551P
      Infineon Technologies AGMOSFET N-CH 650V 12.8A COOLMOSE6 VSON4, RL2995
      • 25:£1.6400
      • 100:£1.4340
      • 250:£1.3420
      • 500:£1.2800
      Immagine Parte # Descrizione
      IPL65R195C7AUMA1

      Mfr.#: IPL65R195C7AUMA1

      OMO.#: OMO-IPL65R195C7AUMA1

      MOSFET HIGH POWER BEST IN CLASS
      IPL65R190E6AUMA1

      Mfr.#: IPL65R190E6AUMA1

      OMO.#: OMO-IPL65R190E6AUMA1

      MOSFET N-Ch 650V 20.2A VSON-4
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      Mfr.#: IPL65R190E6

      OMO.#: OMO-IPL65R190E6-1190

      Infineon HIGH POWER_LEGACY
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      Mfr.#: IPL65R195C7

      OMO.#: OMO-IPL65R195C7-1190

      MOSFET HIGH POWER BEST IN CLASS
      IPL65R195C7AUMA1

      Mfr.#: IPL65R195C7AUMA1

      OMO.#: OMO-IPL65R195C7AUMA1-INFINEON-TECHNOLOGIES

      MOSFET HIGH POWER BEST IN CLASS
      IPL65R190E6AUMA1

      Mfr.#: IPL65R190E6AUMA1

      OMO.#: OMO-IPL65R190E6AUMA1-INFINEON-TECHNOLOGIES

      RF Bipolar Transistors MOSFET N-Ch 650V 20.2A VSON-4
      Disponibilità
      Azione:
      Available
      Su ordine:
      3000
      Inserisci la quantità:
      Il prezzo attuale di IPL65R190E6AUMA1 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
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