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IHW40N120R3FKSA1

IHW40N120R3FKSA1
Mfr. #:
IHW40N120R3FKSA1
Produttore:
Infineon Technologies
Descrizione:
IGBT Transistors IGBT PRODUCTS
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IHW40N120R3FKSA1 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore:
Infineon
Categoria di prodotto:
Transistor IGBT
RoHS:
Y
Tecnologia:
si
Pacchetto/custodia:
TO-247-3
Stile di montaggio:
Foro passante
Configurazione:
Separare
Tensione collettore-emettitore VCEO Max:
1200 V
Tensione di saturazione collettore-emettitore:
1.55 V
Tensione massima dell'emettitore di gate:
20 V
Corrente continua del collettore a 25 C:
80 A
Pd - Dissipazione di potenza:
429 W
Temperatura di esercizio minima:
- 40 C
Temperatura massima di esercizio:
+ 175 C
Serie:
RC
Confezione:
Tubo
Marca:
Tecnologie Infineon
Corrente di dispersione gate-emettitore:
100 nA
Tipologia di prodotto:
Transistor IGBT
Quantità confezione di fabbrica:
240
sottocategoria:
IGBT
Nome depositato:
TRENCHSTOP
Parte # Alias:
IHW40N120R3 SP000999770
Unità di peso:
0.155205 oz
Tags
IHW40N120R3, IHW40N120R, IHW40N12, IHW40N1, IHW40N, IHW4, IHW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 1200V 80A 429000mW Automotive 3-Pin(3+Tab) TO-247 Tube
***Components
In a Tube of 30, Infineon IHW40N120R3FKSA1 IGBT, 80 A 1200 V, 3-Pin TO-247
***ure Electronics
IHW40N120R3 Series 1200 V 80 A Through Hole Reverse conducting IGBT - PG-TO247-3
***et Europe
Trans IGBT Chip N-CH 1.2KV 80A 3-Pin TO-247 Tube
***an P&S
1200V,80A,Reverse Conducting IGBT
***ark
IGBT, SINGLE, 1.2KV, 80A, TO-247-3
***ronik
IGBT 1200V 80V 1,55V TO247-3
***i-Key
IGBT 1200V 80A 429W TO247-3
***ment14 APAC
Prices include import duty and tax. IGBT, SINGLE, 1.2KV, 80A, TO-247-3; DC Collector Current:80A; Collector Emitter Saturation Voltage Vce(on):1.55V; Power Dissipation Pd:429W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-247; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
IGBT SINGOLO 1.2KV 80A TO-247-3; Corrente di Collettore CC:80A; Tensione Saturaz Collettore-Emettitore Vce(on):1.55V; Dissipazione di Potenza Pd:429W; Tensione Collettore-Emettitore V(br)ceo:1.2kV; Modello Case Transistor:TO-247; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***ineon
The 3 rd generation of reverse conducting IGBTs has been optimized for lower switching and conduction losses. Reduced power dissipation together with soft switching behavior allows better thermal performance and EMI behavior resulting in lower system costs. Excellent performance can be achieved at lower costs. | Summary of Features: Best-in-class conduction properties in V CE(sat) and V f; Lowest switching losses, highest efficiency; T j(max) = 175C; Soft current turn-off waveforms for low EMI | Benefits: Lowest power dissipation; Better thermal management; Surge current capability; Lower EMI filtering requirements; Reduced system costs; Excellent quality; Highest reliability against peak currents | Target Applications: Induction cooking stoves; Microwave ovens; Rice cookers; Solar; Other soft switching applications
Parte # Mfg. Descrizione Azione Prezzo
IHW40N120R3FKSA1
DISTI # V36:1790_06378756		Infineon Technologies AGTrans IGBT Chip N-CH 1200V 80A 429000mW 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		2101
  • 500:$3.4100
  • 250:$3.8050
  • 100:$4.0030
  • 10:$4.6129
  • 1:$5.9597
IHW40N120R3FKSA1
DISTI # V99:2348_06378756		Infineon Technologies AGTrans IGBT Chip N-CH 1200V 80A 429000mW 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		240
  • 500:$3.4100
  • 250:$3.8050
  • 100:$4.0030
  • 10:$4.6129
  • 1:$5.9597
IHW40N120R3FKSA1
DISTI # IHW40N120R3FKSA1-ND		Infineon Technologies AGIGBT 1200V 80A 429W TO247-3
RoHS: Compliant
Min Qty: 240
Container: Tube		Limited Supply - Call
  • 240:$4.2289
IHW40N120R3FKSA1
DISTI # 32927229		Infineon Technologies AGTrans IGBT Chip N-CH 1200V 80A 429000mW 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		2101
  • 500:$3.4100
  • 250:$3.8050
  • 100:$4.0020
  • 10:$4.6129
  • 3:$5.4180
IHW40N120R3FKSA1
DISTI # 30695368		Infineon Technologies AGTrans IGBT Chip N-CH 1200V 80A 429000mW 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		240
  • 500:$3.4100
  • 250:$3.8050
  • 100:$4.0020
  • 10:$4.6129
  • 3:$5.4180
IHW40N120R3FKSA1
DISTI # IHW40N120R3FKSA1		Infineon Technologies AGTrans IGBT Chip N-CH 1.2KV 80A 3-Pin TO-247 Tube - Bulk (Alt: IHW40N120R3FKSA1)
RoHS: Compliant
Min Qty: 138
Container: Bulk		Americas - 0
  • 690:$2.2900
  • 1380:$2.2900
  • 414:$2.3900
  • 276:$2.4900
  • 138:$2.5900
IHW40N120R3FKSA1
DISTI # IHW40N120R3FKSA1		Infineon Technologies AGTrans IGBT Chip N-CH 1.2KV 80A 3-Pin TO-247 Tube - Rail/Tube (Alt: IHW40N120R3FKSA1)
RoHS: Compliant
Min Qty: 240
Container: Tube		Americas - 0
  • 1200:$2.5900
  • 2400:$2.5900
  • 720:$2.6900
  • 480:$2.7900
  • 240:$2.8900
IHW40N120R3FKSA1
DISTI # SP000999770		Infineon Technologies AGTrans IGBT Chip N-CH 1.2KV 80A 3-Pin TO-247 Tube (Alt: SP000999770)
RoHS: Compliant
Min Qty: 1
Container: Tube		Europe - 0
  • 1000:€2.0900
  • 500:€2.2900
  • 100:€2.3900
  • 50:€2.4900
  • 25:€2.5900
  • 10:€2.6900
  • 1:€2.8900
IHW40N120R3FKSA1
DISTI # IHW40N120R3		Infineon Technologies AGTrans IGBT Chip N-CH 1.2KV 80A 3-Pin TO-247 Tube (Alt: IHW40N120R3)
RoHS: Compliant
Min Qty: 240
Container: Tube		Asia - 0
  • 12000:$2.6144
  • 6000:$2.6479
  • 2400:$2.6823
  • 1200:$2.7176
  • 720:$2.7911
  • 480:$2.8686
  • 240:$2.9506
IHW40N120R3FKSA1
DISTI # 50Y1988		Infineon Technologies AGIGBT Single Transistor, 80 A, 1.55 V, 429 W, 1.2 kV, TO-247, 3 RoHS Compliant: Yes0
  • 100:$4.4700
  • 50:$4.6800
  • 25:$4.8700
  • 10:$5.0800
  • 1:$5.9000
IHW40N120R3FKSA1
DISTI # 726-IHW40N120R3FKSA1		Infineon Technologies AGIGBT Transistors IGBT PRODUCTS
RoHS: Compliant		68
  • 1:$5.4600
  • 10:$4.6400
  • 100:$4.0200
  • 250:$3.8200
  • 500:$3.4200
IHW40N120R3
DISTI # 726-IHW40N120R3		Infineon Technologies AGIGBT Transistors IGBT PRODUCTS TrenchStop RC
RoHS: Compliant		0
    IHW40N120R3FKSA1Infineon Technologies AGInsulated Gate Bipolar Transistor, 80A I(C), 1200V V(BR)CES, N-Channel
    RoHS: Compliant    		21
    • 1000:$2.4000
    • 500:$2.5200
    • 100:$2.6200
    • 25:$2.7400
    • 1:$2.9500
    IHW40N120R3FKSA1
    DISTI # 1702259    		Infineon Technologies AGIGBT 1200V 40A TRENCHSTOP DIODE TO-247, TU76
    • 300:£2.6960
    • 150:£2.7830
    • 30:£3.2800
    IHW40N120R3FKSA1
    DISTI # 1702372    		Infineon Technologies AGIGBT 1200V 40A TRENCHSTOP DIODE TO-247, EA39
    • 10:£3.2100
    • 1:£4.0500
    IHW40N120R3FKSA1
    DISTI # 2480887    		Infineon Technologies AGIGBT, SINGLE, 1.2KV, 80A, TO-247-3
    RoHS: Compliant    		725
    • 1:$8.7200
    IHW40N120R3FKSA1
    DISTI # 2480887    		Infineon Technologies AGIGBT, SINGLE, 1.2KV, 80A, TO-247-3
    RoHS: Compliant    		690
    • 500:£2.7100
    • 250:£3.0400
    • 100:£3.1900
    • 10:£3.6800
    • 1:£4.8000
    Immagine Parte # Descrizione
    C2M1000170D

    Mfr.#: C2M1000170D

    OMO.#: OMO-C2M1000170D

    		 MOSFET SIC MOSFET 1700V RDS ON 1 Ohm
    C4D15120H

    Mfr.#: C4D15120H

    OMO.#: OMO-C4D15120H

    		 Schottky Diodes & Rectifiers 15A 1200V SiC Schottky Diode
    STPSC20065DI

    Mfr.#: STPSC20065DI

    OMO.#: OMO-STPSC20065DI

    		 Schottky Diodes & Rectifiers 650 V power Schottky silicon carbide diode
    860020672006

    Mfr.#: 860020672006

    OMO.#: OMO-860020672006

    		 Aluminum Electrolytic Capacitors - Radial Leaded WCAP-ATG5 50V 2.2uF 20% ESR=31971mOhms
    MIKROE-1985

    Mfr.#: MIKROE-1985

    OMO.#: OMO-MIKROE-1985

    		 Interface Development Tools USB I2C click
    SN7534051NSR

    Mfr.#: SN7534051NSR

    OMO.#: OMO-SN7534051NSR

    		 RS-422 Interface IC Dual Differential Drivers and Receiver
    C3M0120090D

    Mfr.#: C3M0120090D

    OMO.#: OMO-C3M0120090D

    		 MOSFET G3 SiC MOSFET 900V, 120mOhm
    PA-T2X-38E

    Mfr.#: PA-T2X-38E

    OMO.#: OMO-PA-T2X-38E

    		 Heat Sinks 38mm Heatsink Anodized
    C2M1000170D

    Mfr.#: C2M1000170D

    OMO.#: OMO-C2M1000170D-WOLFSPEED

    		 MOSFET N-CH 1700V 4.9A TO247
    SN7534051NSR

    Mfr.#: SN7534051NSR

    OMO.#: OMO-SN7534051NSR-TEXAS-INSTRUMENTS

    		 RS-422 Interface IC Dual Differential Drivers and Receive
    Disponibilità
    Azione:
    48
    Su ordine:
    2031
    Inserisci la quantità:
    Il prezzo attuale di IHW40N120R3FKSA1 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
    Prezzo di riferimento (USD)
    Quantità
    Prezzo unitario
    est. Prezzo
    1
    5,46 USD
    5,46 USD
    10
    4,64 USD
    46,40 USD
    100
    4,02 USD
    402,00 USD
    250
    3,82 USD
    955,00 USD
    500
    3,42 USD
    1 710,00 USD
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