SQJ912AEP-T1_GE3

Mfr. #:: SQJ912AEP-T1_GE3
Produttore:: Vishay / Siliconix
Descrizione:: MOSFET 40V 30A 48W AEC-Q101 Qualified
Ciclo vitale:: Nuovo da questo produttore.
Scheda dati:: SQJ912AEP-T1_GE3 Scheda dati
Consegna:: DHL FedEx Ups TNT EMS
Pagamento:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: SQJ912AEP-T1_GE3 Datasheet SQJ912AEP-T1_GE3 Datasheet (P4-P6)SQJ912AEP-T1_GE3 Datasheet (P7-P9)SQJ912AEP-T1_GE3 Datasheet (P10-P11)
ECAD Model:
Maggiori informazioni:: SQJ912AEP-T1_GE3 maggiori informazioni

Attributo del prodotto
Valore attributo

Produttore:: Vishay

Categoria di prodotto:: MOSFET

RoHS:: Y

Tecnologia:: si

Stile di montaggio:: SMD/SMT

Pacchetto/custodia:: PowerPAK-SO-8L-4

Numero di canali:: 2 Channel

Polarità del transistor:: Canale N

Vds - Tensione di rottura Drain-Source:: 40 V

Id - Corrente di scarico continua:: 30 A

Rds On - Resistenza Drain-Source:: 7.7 mOhms, 7.7 mOhms

Vgs th - Tensione di soglia gate-source:: 1.5 V

Vgs - Tensione Gate-Source:: 20 V

Qg - Carica cancello:: 38 nC, 38 nC

Temperatura di esercizio minima:: - 55 C

Temperatura massima di esercizio:: + 175 C

Pd - Dissipazione di potenza:: 48 W

Configurazione:: Dual

Modalità canale:: Aumento

Qualificazione:: AEC-Q101

Nome depositato:: TrenchFET

Confezione:: Bobina

Altezza:: 1.04 mm

Lunghezza:: 6.15 mm

Serie:: SQ

Tipo di transistor:: 2 N-Channel

Larghezza:: 5.13 mm

Marca:: Vishay / Siliconix

Transconduttanza diretta - Min:: 58 S, 58 S

Tempo di caduta:: 11 ns, 11 ns

Tipologia di prodotto:: MOSFET

Ora di alzarsi:: 9 ns, 9 ns

Quantità confezione di fabbrica:: 3000

sottocategoria:: MOSFET

Tempo di ritardo allo spegnimento tipico:: 23 ns, 23 ns

Tempo di ritardo di accensione tipico:: 10 ns, 10 ns

Unità di peso:: 0.017870 oz

Tags: SQJ912A, SQJ912, SQJ91, SQJ9, SQJ

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
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Step2:
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Step3:
Packaging Boxes

SQJ912AEP-T1_GE3 Descrizione

***ure Electronics: SQJ912AEP Series 30 V 30 A Automotive Dual N-Channel Mosfet - PowerPAK® SO-8L

***ow.cn: Trans MOSFET N-CH 40V 30A Automotive 5-Pin(4+Tab) PowerPAK SO

***i-Key: MOSFET 2N-CH 40V 30A PPAK SO-8

***et: DUAL N-CHANNEL 40-V (D-S) 175C MOSFE

***ark: Transistor Polarity:n Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:30A; On Resistance Rds(On):0.0077Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V Rohs Compliant: No

***ure Electronics: Single N-Channel 40 V 0.0076 Ohm 52 W SMT Power Mosfet - PowerPAK-1212-8

*** Source Electronics: MOSFET N-CH 40V 35A PPAK 1212-8 / Trans MOSFET N-CH 40V 17.6A 8-Pin PowerPAK 1212 T/R

***ment14 APAC: MOSFET,N CH,40V,35A,POWERPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:35A; Drain Source Voltage Vds:40V; On Resistance Rds(on):6.3mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.2V; Power Dissipation Pd:3.8W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PowerPAK 1212; No. of Pins:8; SVHC:No SVHC (15-Dec-2010); Current Id Max:17.6A; Power Dissipation Pd:3.8W; Voltage Vgs Max:20V

*** Source Electronics: Trans MOSFET P-CH 40V 14A Automotive 3-Pin(2+Tab) DPAK T/R / MOSFET P-CH 40V 14A TO252 DPAK

***ark: Mosfet, P-Ch, 40V, 35A, To-252 Rohs Compliant: Yes |Diodes Inc. DMP4015SK3Q-13

***ure Electronics: DMP4015SK3Q Series 40 V 14 A P-Channel Enhancement Mode Mosfet - TO-252 (DPAK)

***nsix Microsemi: Power Field-Effect Transistor, 12A I(D), 40V, 0.015ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

***(Formerly Allied Electronics): SIRA18DP-T1-GE3 N-channel MOSFET Transistor; 15.5 A; 30 V; 8-Pin PowerPAK SO

***ure Electronics: Single N-Channel 30 V 15.5 A 3.3 W Surface Mount Mosfet - POWERPAK-SO-8

***nell: MOSFET, N-CH, 30V, 33A, POWERPAKSO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:33A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.006ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:14.7W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK SO; No. of Pins:8; MSL:MSL 1 - Unlimited

***ure Electronics: Single N-Channel 30 V 8.5 mOhm 14 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm

***ineon SCT: 30V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package, PQFN 5X6 8L, RoHS

***(Formerly Allied Electronics): MOSFET, 30V, 15A, 8.5 MOHM, 9.3 NC QG, PQFN

***Yang: Trans MOSFET N-CH 30V 15A 8-Pin PQFN T/R - Tape and Reel

***ment14 APAC: MOSFET, N-CH, 30V, 15A, 8PQFN; Transistor Polarity:N Channel; Continuous Drain Current Id:15A; Drain Source Voltage Vds:30V; On Resistance Rds(on):7.1mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Transistor Case Style:PQFN; No. of Pins:8; MSL:MSL 2 - 1 year; SVHC:No SVHC (20-Jun-2011); Current Id Max:15mA; Package / Case:PQFN; Power Dissipation Pd:3.1W; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:1.8V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.35V; Voltage Vgs th Min:1.35V

***ure Electronics: P-Channel 30 V 7.5 mOhm 126.2 nC SMT Enhancement Mode Mosfet - PowerDI

***ark: Mosfet, P-Ch, 30V, 36A, Powerdi 5060 Rohs Compliant: Yes |Diodes Inc. DMP3010LPSQ-13

***ical: Trans MOSFET P-CH 30V 36A Automotive 8-Pin PowerDI EP T/R

***des Inc SCT: P-CHANNEL ENHANCEMENT MODE MOSFET, 30V VDS, 20±V VGS

***nsix Microsemi: Buffer/Inverter Based MOSFET Driver

***i-Key: MOSFET P-CH 30V 36A PWRDI5060-8

***ment14 APAC: MOSFET, P-CH, 30V, 36A, POWERDI 5060;

***emi: 30 V, 35 A, 9 mOhm Single N-Channel Power MOSFET, SO-8FL

***r Electronics: Power Field-Effect Transistor, 7.4A I(D), 30V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

***nell: NTMFS4945NT3G, SINGLE MOSFETS;

SQJ912AEP-T1_GE3 Maggiori informazioni

SQ Automotive Power MOSFETs: Vishay / Siliconix SQ Automotive Power MOSFETs are AEC-Q101 qualified that are produced using a special process design that is optimized for use in the automotive industry. These SQ MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance. The SQ MOSFETs are available in a wide variety of packages for design flexibility. Packages include the TO-252, TO-262, TO-263, PowerPAK SO-8, D2PAK (TO-263), DPAK, and PowerPAK 1212-8W as well as several space-saving, small-outline options. A full range of polarity options is also available, including N-channel and P-Channel co-packages.

Market price

Parte #	Mfg.	Descrizione	Azione	Prezzo
SQJ912AEP-T1-GE3 DISTI # V72:2272_09219249	Vishay Intertechnologies	DUAL N-CHANNEL 40-V (D-S) 175C RoHS: Compliant	2986	1000:$0.4635 500:$0.6041 250:$0.6645 100:$0.7383 25:$0.8634 10:$1.0553 1:$1.2733
SQJ912AEP-T1-GE3 DISTI # V36:1790_09219249	Vishay Intertechnologies	DUAL N-CHANNEL 40-V (D-S) 175C RoHS: Compliant	0	3000000:$0.4581 1500000:$0.4583 300000:$0.4708 30000:$0.4907 3000:$0.4939
SQJ912AEP-T1_GE3 DISTI # SQJ912AEP-T1_GE3CT-ND	Vishay Siliconix	MOSFET 2N-CH 40V 30A PPAK SO-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	5345In Stock	1000:$0.5451 500:$0.6904 100:$0.8358 10:$1.0720 1:$1.2000
SQJ912AEP-T1_GE3 DISTI # SQJ912AEP-T1_GE3DKR-ND	Vishay Siliconix	MOSFET 2N-CH 40V 30A PPAK SO-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	5345In Stock	1000:$0.5451 500:$0.6904 100:$0.8358 10:$1.0720 1:$1.2000
SQJ912AEP-T1_GE3 DISTI # SQJ912AEP-T1_GE3TR-ND	Vishay Siliconix	MOSFET 2N-CH 40V 30A PPAK SO-8 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	3000In Stock	15000:$0.4516 6000:$0.4692 3000:$0.4939
SQJ912AEP-T1-GE3 DISTI # 31686249	Vishay Intertechnologies	DUAL N-CHANNEL 40-V (D-S) 175C RoHS: Compliant	2986	14:$1.2733
SQJ912AEP-T1_GE3 DISTI # SQJ912AEP-T1_GE3	Vishay Intertechnologies	Trans MOSFET N-CH 40V 30A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SQJ912AEP-T1_GE3) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 18000	30000:$0.4148 18000:$0.4253 12000:$0.4364 6000:$0.4480 3000:$0.4603
SQJ912AEP-T1_GE3 DISTI # SQJ912AEP-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 40V 30A 8-Pin PowerPAK SO T/R (Alt: SQJ912AEP-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 0	30000:€0.4609 18000:€0.4819 12000:€0.5449 6000:€0.6719 3000:€0.9369
SQJ912AEP-T1_GE3. DISTI # 23AC9821	Vishay Intertechnologies	Transistor Polarity:Dual N Channel,Continuous Drain Current Id:30A,Drain Source Voltage Vds:40V,On Resistance Rds(on):0.0077ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V,Power Dissipation Pd:48W,No. of Pins:8Pins RoHS Compliant: No	18000	30000:$0.4310 18000:$0.4430 12000:$0.4560 6000:$0.4750 1:$0.4890
SQJ912AEP-T1_GE3 DISTI # 78-SQJ912AEP-T1_GE3	Vishay Intertechnologies	MOSFET 40V 30A 48W AEC-Q101 Qualified RoHS: Compliant	4187	1:$1.1700 10:$0.9670 100:$0.7420 500:$0.6380 1000:$0.5030 3000:$0.4700 6000:$0.4460 9000:$0.4370
SQJ912AEP-T1-GE3 DISTI # 78-SQJ912AEP-T1-GE3	Vishay Intertechnologies	MOSFET RECOMMENDED ALT 78-SQJ912AEP-T1_GE3 RoHS: Compliant	0
SQJ912AEP-T1-GE3	Vishay Intertechnologies	MOSFET RECOMMENDED ALT 78-SQJ912AEP-T1_GE3 RoHS: Compliant	Americas -

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Disponibilità

Azione:: Available
Su ordine:: 1986
Inserisci la quantità:

Il prezzo attuale di SQJ912AEP-T1_GE3 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]

Prezzo di riferimento (USD)

Quantità
Prezzo unitario
est. Prezzo

1: ~~1,17 USD~~; ~~1,17 USD~~

10: ~~0,97 USD~~; ~~9,67 USD~~

100: ~~0,74 USD~~; ~~74,20 USD~~

500: ~~0,64 USD~~; ~~319,00 USD~~

1000: ~~0,50 USD~~; ~~503,00 USD~~

A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.

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SQJ912AEP-T1_GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes